MCH6663-TL-H
  • Share:

onsemi MCH6663-TL-H

Manufacturer No:
MCH6663-TL-H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 30V 1.8/1.5A MCPH6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MCH6663-TL-H is a MOSFET array produced by onsemi, designed for general-purpose switching applications. This component is part of onsemi's portfolio of discrete semiconductor products and is known for its robust performance and reliability.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (Vds)30 V
Continuous Drain Current (Id)1.8 A, 1.5 A
Drain-Source Resistance (Rds On)188 mΩ, 325 mΩ
Package TypeSurface Mount 6-MCPH
Power Dissipation800 mW

Key Features

  • Low ON-resistance: The MCH6663-TL-H features low Rds(on) values of 188 mΩ and 325 mΩ, making it efficient for switching applications.
  • 4V Drive Capability: This MOSFET array can be driven with a low gate voltage of 4V, which is beneficial for systems with limited drive voltage.
  • High Current Handling: With continuous drain currents of 1.8 A and 1.5 A, this component is suitable for applications requiring moderate to high current levels.
  • Compact Package: The surface mount 6-MCPH package makes it ideal for space-constrained designs.

Applications

The MCH6663-TL-H is suitable for a variety of general-purpose switching applications, including but not limited to:

  • Power management circuits
  • Motor control systems
  • Audio and video equipment
  • Automotive electronics
  • Industrial control systems

Q & A

  1. What is the drain-source breakdown voltage of the MCH6663-TL-H?
    The drain-source breakdown voltage (Vds) is 30 V.
  2. What are the continuous drain current ratings for the MCH6663-TL-H?
    The continuous drain current (Id) ratings are 1.8 A and 1.5 A.
  3. What is the typical ON-resistance of the MCH6663-TL-H?
    The typical ON-resistance (Rds On) values are 188 mΩ and 325 mΩ.
  4. What is the package type of the MCH6663-TL-H?
    The package type is surface mount 6-MCPH.
  5. What is the power dissipation capability of the MCH6663-TL-H?
    The power dissipation capability is 800 mW.
  6. Can the MCH6663-TL-H be driven with a low gate voltage?
    Yes, it can be driven with a gate voltage as low as 4V.
  7. What are some common applications for the MCH6663-TL-H?
    Common applications include power management circuits, motor control systems, audio and video equipment, automotive electronics, and industrial control systems.
  8. Where can I find detailed specifications for the MCH6663-TL-H?
    Detailed specifications can be found on the datasheet available from sources like Mouser Electronics, Digi-Key, and the official onsemi website.
  9. Is the MCH6663-TL-H suitable for high-current applications?
    Yes, with continuous drain currents of 1.8 A and 1.5 A, it is suitable for moderate to high current applications.
  10. What is the benefit of the low ON-resistance in the MCH6663-TL-H?
    The low ON-resistance reduces power losses and improves efficiency in switching applications.

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:1.8A, 1.5A
Rds On (Max) @ Id, Vgs:188mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:88pF @ 10V
Power - Max:800mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-SMD, Flat Leads
Supplier Device Package:6-MCPH
0 Remaining View Similar

In Stock

-
51

Please send RFQ , we will respond immediately.

Same Series
MCH6663-TL-W
MCH6663-TL-W
MOSFET N/P-CH 30V 1.8/1.5A MCPH6

Similar Products

Part Number MCH6663-TL-H MCH6663-TL-W MCH6603-TL-H MCH6660-TL-H MCH6662-TL-H
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N and P-Channel N and P-Channel 2 P-Channel (Dual) N and P-Channel 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate, 4V Drive Logic Level Gate, 1.5V Drive Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V 50V 20V 20V
Current - Continuous Drain (Id) @ 25°C 1.8A, 1.5A 1.8A, 1.5A 140mA 2A, 1.5A 2A
Rds On (Max) @ Id, Vgs 188mOhm @ 900mA, 10V 188mOhm @ 900mA, 10V 23Ohm @ 40mA, 4V 136mOhm @ 1A, 4.5V 160mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id - 2.6V @ 1mA - - -
Gate Charge (Qg) (Max) @ Vgs 2nC @ 10V 2nC @ 10V 1.4nC @ 10V 1.8nC @ 4.5V 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 88pF @ 10V 88pF @ 10V 7.4pF @ 10V 128pF @ 10V 128pF @ 10V
Power - Max 800mW 800mW 800mW 800mW 800mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-SMD, Flat Leads 6-TSSOP, SC-88, SOT-363 6-SMD, Flat Leads 6-SMD, Flat Leads 6-SMD, Flat Leads
Supplier Device Package 6-MCPH SC-88FL/MCPH6 6-MCPH 6-MCPH 6-MCPH

Related Product By Categories

PMDXB600UNEZ
PMDXB600UNEZ
Nexperia USA Inc.
MOSFET 2N-CH 20V 0.6A 6DFN
CSD87350Q5D
CSD87350Q5D
Texas Instruments
MOSFET 2N-CH 30V 40A 8LSON
PMGD780SN,115
PMGD780SN,115
Nexperia USA Inc.
MOSFET 2N-CH 60V 0.49A 6TSSOP
2N7002VC-7
2N7002VC-7
Diodes Incorporated
MOSFET 2N-CH 60V 0.28A SOT-563
CSD87588NT
CSD87588NT
Texas Instruments
MOSFET 2N-CH 30V 25A 5PTAB
PHKD13N03LT,518
PHKD13N03LT,518
NXP USA Inc.
SMALL SIGNAL FIELD-EFFECT TRANSI
BSS138DWK-13
BSS138DWK-13
Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT363 T&R
2N7002DWK-13
2N7002DWK-13
Diodes Incorporated
2N7002 FAMILY SOT363 T&R 10K
2N7002VAC-7
2N7002VAC-7
Diodes Incorporated
MOSFET 2N-CH 60V 0.28A SOT-563
MCH6663-TL-W
MCH6663-TL-W
onsemi
MOSFET N/P-CH 30V 1.8/1.5A MCPH6
BSS84DW-7
BSS84DW-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SC70-6
FDG6301N_D87Z
FDG6301N_D87Z
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
BAV70_D87Z
BAV70_D87Z
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
NJVMJD31T4G
NJVMJD31T4G
onsemi
TRANS NPN 40V 3A DPAK
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223