Overview
The MCH6663-TL-W is a complementary dual MOSFET produced by onsemi, designed for general-purpose switching applications. This device features a combination of N-channel and P-channel MOSFETs in a single package, making it versatile for various electronic circuits. The MCH6663-TL-W is known for its low on-resistance, 4V drive capability, and compliance with Pb-Free, Halogen Free, and RoHS standards.
Key Specifications
Parameter | Symbol | N-channel | P-channel | Unit |
---|---|---|---|---|
Drain to Source Voltage | VDSS | 30 | -30 | V |
Gate to Source Voltage | VGSS | ±20 | ±20 | V |
Drain Current (DC) | ID | 1.8 | -1.5 | A |
Drain Current (Pulse) | IDP | 7.2 | -6 | A |
Power Dissipation | PD | 0.8 | W | |
Junction Temperature | Tj | 150 | °C | |
Storage Temperature | Tstg | -55 to +150 | °C | |
On-Resistance (typ.) | RDS(on)1 | 145 mΩ @ 10V | 250 mΩ @ -10V | mΩ |
Gate Threshold Voltage | VGS(th) | 1.2 to 2.6 | -1.2 to -2.6 | V |
Thermal Resistance (Junction to Ambient) | RθJA | 156.25 | °C/W |
Key Features
- Low On-Resistance: The MCH6663-TL-W features low on-resistance values of 145 mΩ (typ.) for the N-channel and 250 mΩ (typ.) for the P-channel, enhancing the device's efficiency in switching applications.
- 4V Drive Capability: This MOSFET can be driven with a gate voltage as low as 4V, making it compatible with a wide range of control signals.
- Complementary N-Channel and P-Channel MOSFETs: The device includes both N-channel and P-channel MOSFETs in a single package, which is beneficial for designing push-pull or totem pole configurations.
- Pb-Free, Halogen Free, and RoHS Compliance: The MCH6663-TL-W is designed to meet environmental regulations, ensuring it is safe for use in various applications.
- High ESD Immunity: The device has an ESD immunity of < 200V (Machine Model), providing protection against electrostatic discharge.
Applications
- General-Purpose Switching: The MCH6663-TL-W is suitable for a variety of switching applications due to its low on-resistance and 4V drive capability.
- Power Management: It can be used in power management circuits, such as voltage regulators, power supplies, and DC-DC converters.
- Motor Control: The device is applicable in motor control circuits, including those for DC motors and stepper motors.
- Audio and Video Equipment: It can be used in audio and video equipment for switching and amplification purposes.
- Automotive and Industrial Systems: The MCH6663-TL-W is also suitable for use in automotive and industrial systems where reliable and efficient switching is required.
Q & A
- What is the typical on-resistance of the N-channel MOSFET in the MCH6663-TL-W?
The typical on-resistance of the N-channel MOSFET is 145 mΩ at VGS = 10V and ID = 0.9A.
- What is the maximum drain current for the P-channel MOSFET?
The maximum drain current for the P-channel MOSFET is -1.5 A.
- What is the gate to source voltage range for both channels?
The gate to source voltage range for both N-channel and P-channel MOSFETs is ±20 V.
- Is the MCH6663-TL-W RoHS compliant?
Yes, the MCH6663-TL-W is Pb-Free, Halogen Free, and RoHS compliant.
- What is the thermal resistance from junction to ambient for the MCH6663-TL-W?
The thermal resistance from junction to ambient is 156.25 °C/W when mounted on a ceramic substrate (900mm^2 × 0.8mm).
- What are the storage temperature limits for the MCH6663-TL-W?
The storage temperature range is -55°C to +150°C.
- Can the MCH6663-TL-W be used in high-frequency applications?
Yes, the device has fast switching times, with turn-on delay times of 3.4 ns and turn-off delay times of 10.5 ns for the N-channel, making it suitable for high-frequency applications.
- What is the ESD immunity of the MCH6663-TL-W?
The device has an ESD immunity of < 200V (Machine Model).
- What are the package types available for the MCH6663-TL-W?
The device is available in SC-88, SC-70-6, and SOT-363 packages.
- Can the MCH6663-TL-W be used in automotive applications?
Yes, the device is suitable for use in automotive systems where reliable and efficient switching is required.