Overview
The NTLJD4116NT1G is a dual N-channel power MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in a WDFN 2x2 mm footprint, providing excellent thermal conduction and a low profile suitable for thin environments. It is optimized for operation at low voltage gate drive logic levels, making it ideal for battery and load management in portable equipment.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±8.0 | V |
| Continuous Drain Current (TA = 25°C) | ID | 3.7 | A |
| Continuous Drain Current (TA = 85°C) | ID | 2.7 | A |
| Pulsed Drain Current (tp = 10 μs) | IDM | 20 | A |
| Power Dissipation (TA = 25°C) | PD | 1.5 | W |
| On-Resistance (VGS = 4.5 V, ID = 2.0 A) | RDS(on) | 47 - 70 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 0.4 - 1.0 | V |
| Operating Junction Temperature | TJ | -55 to 150 | °C |
Key Features
- WDFN package with exposed drain pad for excellent thermal conduction
- Lowest RDS(on) solution in 2x2 mm package
- 1.5 V RDS(on) rating for operation at low voltage gate drive logic levels
- Low profile (< 0.8 mm) for easy fit in thin environments
- Pb-free device
Applications
- DC-DC converters (Buck and Boost circuits)
- Low side load switch
- Optimized for battery and load management applications in portable equipment such as cell phones, PDAs, media players, etc.
- Level shift for high side load switch
Q & A
- What is the maximum drain-to-source voltage of the NTLJD4116NT1G?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current at 25°C and 85°C?
The continuous drain current is 3.7 A at 25°C and 2.7 A at 85°C.
- What is the pulsed drain current rating?
The pulsed drain current (IDM) is 20 A for a pulse width of 10 μs.
- What is the on-resistance of the MOSFET at VGS = 4.5 V and ID = 2.0 A?
The on-resistance (RDS(on)) is between 47 mΩ and 70 mΩ.
- What are the operating junction and storage temperatures?
The operating junction and storage temperatures range from -55°C to 150°C.
- What are the typical applications of the NTLJD4116NT1G?
Typical applications include DC-DC converters, low side load switches, battery and load management in portable equipment, and level shift for high side load switches.
- What is the package type of the NTLJD4116NT1G?
The package type is WDFN 2x2 mm.
- Is the NTLJD4116NT1G a Pb-free device?
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is from 0.4 V to 1.0 V.
- What is the thermal resistance from junction to ambient for single operation?
The thermal resistance from junction to ambient (RθJA) for single operation is 83 °C/W for steady state and 54 °C/W for t ≤ 5 s.
