FDG6317NZ
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onsemi FDG6317NZ

Manufacturer No:
FDG6317NZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 20V 0.7A SC70-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDG6317NZ is a dual N-Channel MOSFET designed and manufactured by onsemi (formerly Fairchild Semiconductor). This device is specifically engineered to enhance the efficiency of DC/DC converters, whether used in synchronous or conventional configurations. It is part of the PowerTrench® family, known for its advanced technology and performance in power management applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 20 V
ID (Continuous Drain Current) 0.7 A
PD (Power Dissipation) 0.3 W
RDS(ON) (On-Resistance) Typically low, optimized for motor driver applications Ω
VGS (Gate-Source Voltage) ±20 V

Key Features

  • Dual N-Channel MOSFET configuration for improved efficiency in DC/DC converters.
  • Low on-resistance (RDS(ON)) for reduced power losses.
  • Standard 40V gate level, suitable for a wide range of applications.
  • Protected low-side smart device with temperature and current limit features.
  • Part of the PowerTrench® family, known for advanced power management technology.

Applications

  • DC/DC converters (both synchronous and conventional configurations).
  • Motor driver applications due to its low on-resistance and robust design.
  • Power management in various electronic systems requiring high efficiency and reliability.

Q & A

  1. What is the FDG6317NZ MOSFET used for? The FDG6317NZ is used to improve the efficiency of DC/DC converters and in motor driver applications.
  2. What is the maximum drain-source voltage (VDS) of the FDG6317NZ? The maximum drain-source voltage is 20V.
  3. What is the continuous drain current (ID) of the FDG6317NZ? The continuous drain current is 0.7A.
  4. What is the power dissipation (PD) of the FDG6317NZ? The power dissipation is 0.3W.
  5. Is the FDG6317NZ still in production? No, the FDG6317NZ is obsolete and not in production.
  6. What technology is the FDG6317NZ based on? The FDG6317NZ is based on PowerTrench® technology.
  7. What are the key protection features of the FDG6317NZ? The device includes temperature and current limit features.
  8. What is the typical gate-source voltage (VGS) range for the FDG6317NZ? The typical gate-source voltage range is ±20V.
  9. Where can I find detailed specifications for the FDG6317NZ? Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and TME.
  10. What are some common applications for the FDG6317NZ? Common applications include DC/DC converters and motor driver applications.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:700mA
Rds On (Max) @ Id, Vgs:400mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:66.5pF @ 10V
Power - Max:300mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88 (SC-70-6)
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