2N7002PS/ZLH
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Nexperia USA Inc. 2N7002PS/ZLH

Manufacturer No:
2N7002PS/ZLH
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2 N-CH 60V 320MA SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The 2N7002PS/ZLH is a dual N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia. This MOSFET is part of the Trench MOSFET family and is packaged in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. It is designed for high performance and reliability in various electronic applications, offering a compact solution for space-constrained designs.

Key Specifications

ParameterConditionsMinTypMaxUnit
Drain-Source Voltage (VDS)---60V
Gate-Source Voltage (VGS)Tamb = 25 °C-20-20V
Drain Current (ID)VGS = 10 V; Tamb = 25 °C--320mA
Peak Drain Current (IDM)Tamb = 25 °C; single pulse; tp ≤ 10 µs--1.2A
Total Power Dissipation (Ptot)Tamb = 25 °C--990mW
Junction Temperature (Tj)---150°C
Ambient Temperature (Tamb)--55-150°C
Gate-Source Threshold Voltage (VGSth)ID = 250 µA; VDS=VGS; Tj = 25 °C1.11.752.4V
Drain-Source On-State Resistance (RDSon)ID = 500 mA; VGS = 10 V--1.6Ω
Input Capacitance (Ciss)VDS = 10 V-3050pF

Key Features

  • Dual N-channel enhancement mode Field-Effect Transistor (FET)
  • Trench MOSFET technology for high performance and low on-state resistance
  • Compact SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package
  • Logic level gate for easy interface with microcontrollers and other logic circuits
  • High drain-source breakdown voltage of 60 V
  • Continuous drain current of up to 320 mA at 25 °C
  • Low drain-source on-state resistance (RDSon) of up to 1.6 Ω at ID = 500 mA and VGS = 10 V

Applications

The 2N7002PS/ZLH is suitable for a variety of applications, including:

  • General-purpose switching and amplification
  • Low-power DC-DC converters
  • Motor control and drive circuits
  • Audio and video switching
  • Automotive and industrial control systems

Q & A

  1. What is the maximum drain-source voltage of the 2N7002PS/ZLH?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the continuous drain current rating at 25 °C?
    The continuous drain current (ID) is up to 320 mA at 25 °C.
  3. What is the typical gate-source threshold voltage?
    The typical gate-source threshold voltage (VGSth) is 1.75 V.
  4. What is the maximum drain-source on-state resistance?
    The maximum drain-source on-state resistance (RDSon) is up to 1.6 Ω at ID = 500 mA and VGS = 10 V.
  5. What is the package type of the 2N7002PS/ZLH?
    The package type is SOT363 (SC-88) Surface-Mounted Device (SMD).
  6. What is the maximum junction temperature?
    The maximum junction temperature (Tj) is 150 °C.
  7. Is the 2N7002PS/ZLH RoHS compliant?
    Yes, the 2N7002PS/ZLH is RoHS compliant.
  8. What are some common applications for the 2N7002PS/ZLH?
    Common applications include general-purpose switching, low-power DC-DC converters, motor control, audio and video switching, and automotive and industrial control systems.
  9. What is the input capacitance of the 2N7002PS/ZLH?
    The input capacitance (Ciss) is up to 50 pF at VDS = 10 V.
  10. What is the peak drain current rating?
    The peak drain current (IDM) is up to 1.2 A for a single pulse with tp ≤ 10 µs.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:320mA (Ta)
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 10V
Power - Max:990mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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Similar Products

Part Number 2N7002PS/ZLH 2N7002PS/ZLX
Manufacturer Nexperia USA Inc. NXP Semiconductors
Product Status Obsolete Active
FET Type 2 N-Channel (Dual) -
FET Feature Logic Level Gate -
Drain to Source Voltage (Vdss) 60V -
Current - Continuous Drain (Id) @ 25°C 320mA (Ta) -
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V -
Vgs(th) (Max) @ Id 2.4V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 4.5V -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V -
Power - Max 990mW -
Operating Temperature 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case 6-TSSOP, SC-88, SOT-363 -
Supplier Device Package 6-TSSOP -

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