FDMB2308PZ
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onsemi FDMB2308PZ

Manufacturer No:
FDMB2308PZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH MLP2X3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The FDMB2308PZ is a dual P-channel MOSFET array designed and manufactured by onsemi. This device is specifically tailored for use in Li-Ion battery pack protection circuits and other ultra-portable applications. It offers a compact solution in a 6-pin MicroFET 2x3 package, making it ideal for space-constrained designs.

Key Specifications

ParameterValue
ConfigurationDual Common Drain P-Channel
Package Type6-MLP (2x3)
Drain-Source Voltage (Vds)20 V
Continuous Drain Current (Id)7 A
Power Dissipation (Pd)800 mW
Gate Charge (Qg)Small gate charge
Reverse Recovery Charge (Qrr)Small reverse recovery charge
Body Diode CharacteristicsSoft reverse recovery body diode

Key Features

  • Compact 6-pin MicroFET 2x3 package, suitable for space-constrained designs.
  • Small gate charge (Qg) and small reverse recovery charge (Qrr) for fast switching.
  • Soft reverse recovery body diode, contributing to efficient switching performance.
  • High continuous drain current of 7 A and drain-source voltage of 20 V.
  • Low power dissipation of 800 mW.

Applications

  • Li-Ion battery pack protection circuits.
  • Ultra-portable electronic devices.
  • Other applications requiring compact, high-performance MOSFET solutions.

Q & A

  1. What is the configuration of the FDMB2308PZ MOSFET? The FDMB2308PZ is a dual common drain P-channel MOSFET array.
  2. What is the package type of the FDMB2308PZ? The FDMB2308PZ comes in a 6-MLP (2x3) package.
  3. What is the maximum drain-source voltage (Vds) of the FDMB2308PZ? The maximum drain-source voltage is 20 V.
  4. What is the continuous drain current (Id) of the FDMB2308PZ? The continuous drain current is 7 A.
  5. What is the power dissipation (Pd) of the FDMB2308PZ? The power dissipation is 800 mW.
  6. What are the key benefits of the FDMB2308PZ in terms of switching performance? The FDMB2308PZ features small gate charge (Qg), small reverse recovery charge (Qrr), and a soft reverse recovery body diode, which contribute to fast and efficient switching.
  7. What are some common applications for the FDMB2308PZ? Common applications include Li-Ion battery pack protection circuits and other ultra-portable electronic devices.
  8. Why is the FDMB2308PZ suitable for space-constrained designs? The FDMB2308PZ is suitable due to its compact 6-pin MicroFET 2x3 package.
  9. Where can I find detailed specifications for the FDMB2308PZ? Detailed specifications can be found on the official onsemi website, as well as on distributor websites such as Digi-Key and Mouser Electronics.
  10. What is the significance of the soft reverse recovery body diode in the FDMB2308PZ? The soft reverse recovery body diode contributes to fast and efficient switching by reducing the reverse recovery time and associated losses.

Product Attributes

FET Type:2 P-Channel (Dual) Common Drain
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Rds On (Max) @ Id, Vgs:36mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:3030pF @ 10V
Power - Max:800mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-WDFN Exposed Pad
Supplier Device Package:6-MLP (2x3)
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$2.20
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