2N7002DW-7
  • Share:

Diodes Incorporated 2N7002DW-7

Manufacturer No:
2N7002DW-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 0.23A SOT-363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002DW-7-F is a dual N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is part of the 2N7002 series and is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. It is ideal for high-efficiency power management applications due to its low on-resistance, low gate threshold voltage, and fast switching speed. The MOSFET is packaged in an ultra-small SOT-363 (SC-70-6, SC-88) surface mount package, making it suitable for space-constrained designs.

Key Specifications

Attribute Value Unit
FET Type Dual N-Channel
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance-Max (RDS(ON)) 7.5 Ω @ VGS = 5V Ω
Maximum Continuous Drain Current (ID) 0.23 A A
Rated Power Dissipation 200 mW mW
Package Style SOT-363 (SC-70-6, SC-88)
Mounting Method Surface Mount
Gate Threshold Voltage (VGS(TH)) 1.0 - 2.0 V V
Input Capacitance (Ciss) 22 - 50 pF pF
Operating and Storage Temperature Range -55 to +150 °C °C

Key Features

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable

Applications

  • Motor Control
  • Power Management Functions

Q & A

  1. What is the drain-to-source voltage rating of the 2N7002DW-7-F MOSFET?

    The drain-to-source voltage rating is 60V.

  2. What is the maximum on-state resistance (RDS(ON)) of the 2N7002DW-7-F?

    The maximum on-state resistance is 7.5 Ω at VGS = 5V.

  3. What is the maximum continuous drain current (ID) of the 2N7002DW-7-F?

    The maximum continuous drain current is 0.23 A.

  4. What is the package style of the 2N7002DW-7-F?

    The package style is SOT-363 (SC-70-6, SC-88).

  5. Is the 2N7002DW-7-F RoHS compliant?

    Yes, the 2N7002DW-7-F is totally lead-free and fully RoHS compliant..

  6. What are the typical applications of the 2N7002DW-7-F MOSFET?

    The typical applications include motor control and power management functions.

  7. What is the gate threshold voltage range of the 2N7002DW-7-F?

    The gate threshold voltage range is 1.0 to 2.0 V..

  8. What is the input capacitance range of the 2N7002DW-7-F?

    The input capacitance range is 22 to 50 pF..

  9. Is the 2N7002DW-7-F qualified for automotive applications?

    The 2N7002DW-7-F is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive applications..

  10. What is the operating and storage temperature range of the 2N7002DW-7-F?

    The operating and storage temperature range is -55 to +150 °C..

  11. Is the 2N7002DW-7-F PPAP capable?

    Yes, the 2N7002DW-7-F is PPAP capable..

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:230mA
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
Power - Max:310mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

-
385

Please send RFQ , we will respond immediately.

Same Series
2N7002DWQ-7-F
2N7002DWQ-7-F
MOSFET 2N-CH 60V 0.23A SOT363
2N7002DW-7
2N7002DW-7
MOSFET 2N-CH 60V 0.23A SOT-363

Similar Products

Part Number 2N7002DW-7 2N7002DWK-7 2N7002DWS-7 2N7002DWA-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Discontinued at Digi-Key Active Active Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Standard Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V 60V 60V
Current - Continuous Drain (Id) @ 25°C 230mA 261mA (Ta) 247mA (Ta) 180mA
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V 3Ohm @ 200mA, 10V 4Ohm @ 500mA, 10V 6Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 1.04nC @ 10V 0.4nC @ 4.5V 0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V 41pF @ 30V 41pF @ 25V 22pF @ 25V
Power - Max 310mW 330mW (Ta) 290mW (Ta) 300mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363 SOT-363 SOT-363

Related Product By Categories

NTUD3170NZT5G
NTUD3170NZT5G
onsemi
MOSFET 2N-CH 20V 0.22A SOT-963
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
FDMC8030
FDMC8030
onsemi
MOSFET 2N-CH 40V 12A 8POWER33
NTZD5110NT1G
NTZD5110NT1G
onsemi
MOSFET 2N-CH 60V 294MA SOT563
IRF7103TRPBF
IRF7103TRPBF
Infineon Technologies
MOSFET 2N-CH 50V 3A 8-SOIC
NTJD4158CT1G
NTJD4158CT1G
onsemi
MOSFET N/P-CH 30V/20V SOT363
FDG6335N
FDG6335N
onsemi
MOSFET 2N-CH 20V 0.7A SOT-363
FDMQ8203
FDMQ8203
onsemi
MOSFET 2N/2P-CH 100V/80V 12-MLP
FDS4897AC
FDS4897AC
onsemi
MOSFET N/P-CH 40V 6.1A/5.2A 8SO
IPG20N04S4L08AATMA1
IPG20N04S4L08AATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
FDG6301N_D87Z
FDG6301N_D87Z
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6
FDG6303N_D87Z
FDG6303N_D87Z
onsemi
MOSFET 2N-CH 25V 0.5A SC70-6

Related Product By Brand

BAS70-04T-7-F
BAS70-04T-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT523
BAV170T-7
BAV170T-7
Diodes Incorporated
DIODE ARRAY GP 85V 125MA SOT523
BAT54TW-7
BAT54TW-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT363
BAS20W-7-F
BAS20W-7-F
Diodes Incorporated
DIODE GEN PURP 150V 200MA SOT323
BAS16LPQ-7
BAS16LPQ-7
Diodes Incorporated
FAST SWITCHING DIODE X1-DFN1006-
1N4007L-T
1N4007L-T
Diodes Incorporated
DIODE GEN PURP 1KV 1A DO41
BAS521LP-7B
BAS521LP-7B
Diodes Incorporated
DIODE GEN PURP 325V 400MA 2DFN
BZX84C36TS-7-F
BZX84C36TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 36V SOT363
BZX84C27-7-F
BZX84C27-7-F
Diodes Incorporated
DIODE ZENER 27V 300MW SOT23-3
BZX84B11-7-F
BZX84B11-7-F
Diodes Incorporated
DIODE ZENER 11V 350MW SOT23
BC817-40-7-F
BC817-40-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BCX5410TA
BCX5410TA
Diodes Incorporated
TRANS NPN 45V 1A SOT89-3