2N7002DWA-7
  • Share:

Diodes Incorporated 2N7002DWA-7

Manufacturer No:
2N7002DWA-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 0.18A SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002DWA-7 is a dual N-channel enhancement mode MOSFET produced by Diodes Incorporated. This component is designed to offer high efficiency and superior switching performance, making it ideal for various power management and control applications. The MOSFET features a low on-state resistance, low gate threshold voltage, and fast switching speed, which are crucial for high-performance electronic systems.

Key Specifications

CharacteristicSymbolMinTypMaxUnitTest Condition
Drain-Source Breakdown VoltageBVDSS60-70VVGS = 0V, ID = 10µA
Gate Threshold VoltageVGS(TH)1.0-2.0VVDS = VGS, ID = 250µA
Static Drain-Source On-ResistanceRDS(ON)--7.5ΩVGS = 5.0V, ID = 0.05A
On-State Drain CurrentID(ON)0.5--AVGS = 10V, VDS = 7.5V
Input CapacitanceCiss--50pFVDS = 25V, VGS = 0V, f = 1.0MHz
Turn-On Delay TimetD(ON)--20nsVDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω
Turn-Off Delay TimetD(OFF)--20nsVDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω
Operating and Storage Temperature RangeTJ, TSTG-55-150°C-

Key Features

  • Dual N-Channel MOSFET
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Ultra-Small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Applications

  • Motor Control
  • Power Management Functions
  • High-efficiency power management applications

Q & A

  1. What is the maximum drain-source breakdown voltage of the 2N7002DWA-7?
    The maximum drain-source breakdown voltage is 70V.
  2. What is the typical on-state resistance of the 2N7002DWA-7?
    The typical on-state resistance is 7.5Ω at VGS = 5.0V and ID = 0.05A.
  3. What is the gate threshold voltage range of the 2N7002DWA-7?
    The gate threshold voltage range is from 1.0V to 2.0V.
  4. What is the maximum on-state drain current of the 2N7002DWA-7?
    The maximum on-state drain current is 0.5A at VGS = 10V and VDS = 7.5V.
  5. What is the input capacitance of the 2N7002DWA-7?
    The input capacitance is up to 50pF at VDS = 25V, VGS = 0V, and f = 1.0MHz.
  6. What are the typical turn-on and turn-off delay times of the 2N7002DWA-7?
    The typical turn-on and turn-off delay times are up to 20ns each.
  7. What is the operating and storage temperature range of the 2N7002DWA-7?
    The operating and storage temperature range is from -55°C to +150°C.
  8. Is the 2N7002DWA-7 RoHS compliant?
    Yes, the 2N7002DWA-7 is totally lead-free and fully RoHS compliant.
  9. What are some common applications of the 2N7002DWA-7?
    Common applications include motor control and power management functions.
  10. What package type does the 2N7002DWA-7 come in?
    The 2N7002DWA-7 comes in an ultra-small surface mount package.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:180mA
Rds On (Max) @ Id, Vgs:6Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:22pF @ 25V
Power - Max:300mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
0 Remaining View Similar

In Stock

-
195

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N7002DWA-7 2N7002DWK-7 2N7002DWAQ-7 2N7002DWS-7 2N7002DW-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active Active Active Discontinued at Digi-Key
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Standard Standard Standard Standard
Drain to Source Voltage (Vdss) 60V 60V 60V 60V 60V
Current - Continuous Drain (Id) @ 25°C 180mA 261mA (Ta) 180mA (Ta) 247mA (Ta) 230mA
Rds On (Max) @ Id, Vgs 6Ohm @ 115mA, 10V 3Ohm @ 200mA, 10V 6Ohm @ 115mA, 10V 4Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.87nC @ 10V 1.04nC @ 10V 0.87nC @ 10V 0.4nC @ 4.5V -
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V 41pF @ 30V 22pF @ 25V 41pF @ 25V 50pF @ 25V
Power - Max 300mW 330mW (Ta) 300mW 290mW (Ta) 310mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363 SOT-363 SOT-363 SOT-363

Related Product By Categories

CSD87352Q5D
CSD87352Q5D
Texas Instruments
MOSFET 2N-CH 30V 25A 8SON
2N7002DW
2N7002DW
onsemi
MOSFET 2N-CH 60V 0.115A SC70-6
FDMA3023PZ
FDMA3023PZ
onsemi
MOSFET 2P-CH 30V 2.9A 6MICROFET
IRF7343TRPBF
IRF7343TRPBF
Infineon Technologies
MOSFET N/P-CH 55V 8-SOIC
FDG6301N
FDG6301N
onsemi
MOSFET 2N-CH 25V 0.22A SC70-6
STS8DNF3LL
STS8DNF3LL
STMicroelectronics
MOSFET 2N-CH 30V 8A 8-SOIC
FDG6308P
FDG6308P
onsemi
MOSFET 2P-CH 20V 600MA SC88
STL7DN6LF3
STL7DN6LF3
STMicroelectronics
MOSFET 2N-CH 60V 20A 5X6
BSS84DW-7-F
BSS84DW-7-F
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SC70-6
BSS138DWK-7
BSS138DWK-7
Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT363 T&R
VEC2315-TL-W
VEC2315-TL-W
onsemi
MOSFET 2P-CH 60V 2.5A VEC8
2N7002PS/ZLH
2N7002PS/ZLH
Nexperia USA Inc.
MOSFET 2 N-CH 60V 320MA SOT363

Related Product By Brand

BAT54ST-7-F
BAT54ST-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT523
BAW567DW-7-F
BAW567DW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
BAV170Q-13-F
BAV170Q-13-F
Diodes Incorporated
SWITCHING DIODE BVR <= 100V SOT2
BAS70-05-7
BAS70-05-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT23-3
BAT54TA
BAT54TA
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT23-3
BAT760-7
BAT760-7
Diodes Incorporated
DIODE SCHOTTKY 30V 1A SOD323
BAT54T-7
BAT54T-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT523
BZX84C2V4Q-13-F
BZX84C2V4Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84C27Q-7-F
BZX84C27Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BSS123WQ-7-F
BSS123WQ-7-F
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT323
BSS138K-13
BSS138K-13
Diodes Incorporated
MOSFET N-CH 50V 310MA SOT23
BSS84TA
BSS84TA
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3