Overview
The FDMS3669S is a dual N-Channel MOSFET device manufactured by onsemi, utilizing the advanced PowerTrench technology. This device is packaged in a dual PQFN package and is designed to optimize power efficiency in synchronous buck converters. The internal connection of the switch node simplifies the placement and routing of these converters. The device consists of a control MOSFET (Q1) and a synchronous SyncFET (Q2), both of which are tailored to provide high performance and efficiency.
Key Specifications
| Parameter | Q1 (Control MOSFET) | Q2 (SyncFET) |
|---|---|---|
| Maximum RDS(on) at VGS = 10 V | 10 mΩ at ID = 13 A | 5 mΩ at ID = 18 A |
| Maximum RDS(on) at VGS = 4.5 V | 14.5 mΩ at ID = 10 A | 5.2 mΩ at ID = 17 A |
| Input Capacitance (Ciss) at VDS = 15 V, VGS = 0 V, f = 1 MHz | 1205 - 1605 pF | 1469 - 2060 pF |
| Output Capacitance (Coss) at VDS = 15 V, VGS = 0 V, f = 1 MHz | 370 - 495 pF | 485 - 680 pF |
| Reverse Transfer Capacitance (Crss) at VDS = 15 V, VGS = 0 V, f = 1 MHz | 35 - 55 pF | 59 - 90 pF |
| Gate Resistance (Rg) | 0.3 - 3.2 Ω | 0.2 - 3.0 Ω |
| Turn-On Delay Time (td(on)) | 24 - 38 ns at VDD = 15 V, ID = 13 A, RGEN = 6 Ω | 21 - 33 ns at VDD = 15 V, ID = 18 A, RGEN = 6 Ω |
Key Features
- Low inductance packaging to shorten rise/fall times, resulting in lower switching losses.
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
- RoHS Compliant, Pb-Free, and Halide-Free.
- Internal connection of the switch node for easy placement and routing of synchronous buck converters.
- SyncFET process embeds a Schottky diode in parallel with the MOSFET, similar to a discrete external Schottky diode.
Applications
- Computing
- Communications
- General Purpose Point of Load
- Notebook VCORE
Q & A
- What is the FDMS3669S? The FDMS3669S is a dual N-Channel MOSFET device in a dual PQFN package, designed for synchronous buck converters.
- What are the key components of the FDMS3669S? The device includes a control MOSFET (Q1) and a synchronous SyncFET (Q2).
- What are the maximum RDS(on) values for Q1 and Q2? For Q1, the maximum RDS(on) is 10 mΩ at VGS = 10 V, ID = 13 A, and 14.5 mΩ at VGS = 4.5 V, ID = 10 A. For Q2, it is 5 mΩ at VGS = 10 V, ID = 18 A, and 5.2 mΩ at VGS = 4.5 V, ID = 17 A.
- What are the benefits of the low inductance packaging? The low inductance packaging shortens rise/fall times, resulting in lower switching losses.
- Is the FDMS3669S RoHS Compliant? Yes, the FDMS3669S is RoHS Compliant, Pb-Free, and Halide-Free.
- What applications is the FDMS3669S suitable for? It is suitable for computing, communications, general purpose point of load, and notebook VCORE applications.
- How does the SyncFET process enhance the device? The SyncFET process embeds a Schottky diode in parallel with the MOSFET, similar to a discrete external Schottky diode, which improves performance.
- What are the recommended PCB layout guidelines for the FDMS3669S? The guidelines include placing the driver IC close to the Power Stage part, ensuring low impedance grounding, and using multiple vias for smooth current flow and heat conduction.
- What is the significance of the internal connection of the switch node? The internal connection of the switch node simplifies the placement and routing of synchronous buck converters.
- How does the device minimize switch node ringing? The device minimizes switch node ringing through its proprietary design and low inductance packaging, reducing the need for external snubbing components.
