2N7002DW L6327
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Infineon Technologies 2N7002DW L6327

Manufacturer No:
2N7002DW L6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 60V 0.3A SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002DW L6327, produced by Infineon Technologies, is a dual N-channel enhancement mode field-effect transistor (FET) designed for high-efficiency power management applications. This MOSFET is part of the OptiMOS™ family, known for its fast switching capabilities and low on-state resistance. It is packaged in a small SOT363 (SC-70-6) surface mount package, making it suitable for compact and efficient designs.

Key Specifications

Parameter Symbol Conditions Unit Min. Typ. Max.
Drain to Source Voltage VDSS VGS = 0 V V - - 60
Continuous Drain Current ID TA = 25 °C A - - 0.30
Pulsed Drain Current ID,pulse TA = 25 °C A - - 1.2
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA V 1.5 2.1 2.5
Drain-Source On-State Resistance RDS(on) VGS = 10 V, ID = 0.5 A Ω - 1.6 3
Input Capacitance Ciss VDS = 25 V, f = 1 MHz pF 13 - 20
Operating and Storage Temperature Tj, Tstg - °C -55 - 150
Power Dissipation Ptot TA = 25 °C W - - 0.5

Key Features

  • Dual N-channel enhancement mode MOSFET
  • Logic level gate
  • Low on-state resistance (RDS(on))
  • Low gate threshold voltage (VGS(th))
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Ultra-small surface mount package (SOT363/SC-70-6)
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free (green device)
  • Avalanche rated and qualified according to AEC Q101

Applications

  • Motor control
  • Power management functions
  • High-efficiency power management applications
  • Automotive applications (with specific change control and AEC-Q100/101/200 qualification)

Q & A

  1. What is the maximum drain to source voltage of the 2N7002DW L6327?

    The maximum drain to source voltage (VDSS) is 60 V.

  2. What is the continuous drain current at 25°C?

    The continuous drain current (ID) at 25°C is 0.30 A.

  3. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(th)) ranges from 1.5 V to 2.5 V.

  4. What is the typical on-state resistance?

    The typical on-state resistance (RDS(on)) is 1.6 Ω at VGS = 10 V and ID = 0.5 A.

  5. What is the input capacitance?

    The input capacitance (Ciss) is between 13 pF and 20 pF at VDS = 25 V and f = 1 MHz.

  6. What are the operating and storage temperature ranges?

    The operating and storage temperature ranges are from -55°C to 150°C.

  7. Is the 2N7002DW L6327 RoHS compliant?

    Yes, the 2N7002DW L6327 is totally lead-free and fully RoHS compliant.

  8. What package type is used for the 2N7002DW L6327?

    The 2N7002DW L6327 is packaged in a SOT363 (SC-70-6) surface mount package.

  9. Is the 2N7002DW L6327 suitable for automotive applications?

    Yes, it is suitable for automotive applications and is qualified according to AEC Q101.

  10. What are some common applications of the 2N7002DW L6327?

    Common applications include motor control, power management functions, and high-efficiency power management applications.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:300mA
Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:20pF @ 25V
Power - Max:500mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VSSOP, SC-88, SOT-363
Supplier Device Package:PG-SOT363-PO
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