Overview
The BC850CE6327HTSA1 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This NPN transistor is designed for various applications requiring high current gain and low collector-emitter saturation voltage. It is packaged in a SOT-23-3 case, making it suitable for surface mount technology (SMT) assembly. The transistor is part of the BC850 series, known for its reliability and performance in audio frequency (AF) input stages and driver applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 45 | V |
| Collector-Emitter Voltage (Base Open) | VCES | 50 | V |
| Collector-Base Voltage | VCBO | 50 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Collector Current | IC | 100 | mA |
| Peak Collector Current (tp ≤ 10 ms) | ICM | 200 | mA |
| Total Power Dissipation | Ptot | 330 | mW |
| Junction Temperature | Tj | 150 | °C |
| Transition Frequency | fT | 250 | MHz |
| Collector-Emitter Saturation Voltage | Vce(sat) | 600 mV @ 5mA, 100mA | mV |
| DC Current Gain (hFE) | hFE | 420 @ 2mA, 5V |
Key Features
- High Current Gain: The BC850CE6327HTSA1 offers a high DC current gain (hFE) of 420 at 2 mA and 5 V, making it suitable for applications requiring high amplification.
- Low Collector-Emitter Saturation Voltage: With a Vce(sat) of 600 mV at 5 mA and 100 mA, this transistor minimizes power losses in saturation.
- High Transition Frequency: The transistor has a transition frequency (fT) of 250 MHz, which is beneficial for high-frequency applications.
- Compact Packaging: The SOT-23-3 package is ideal for surface mount technology, allowing for compact and efficient board design..
Applications
- Audio Frequency (AF) Input Stages: The BC850CE6327HTSA1 is well-suited for AF input stages due to its high current gain and low noise characteristics.
- Driver Applications: It can be used as a driver in various electronic circuits requiring high current amplification..
- General Purpose Amplification: This transistor can be used in a wide range of general-purpose amplification applications where reliability and performance are critical..
Q & A
- What is the collector-emitter voltage rating of the BC850CE6327HTSA1?
The collector-emitter voltage rating is 45 V.
- What is the maximum collector current for the BC850CE6327HTSA1?
The maximum collector current is 100 mA.
- What is the transition frequency of the BC850CE6327HTSA1?
The transition frequency is 250 MHz.
- What type of packaging does the BC850CE6327HTSA1 use?
The transistor is packaged in a SOT-23-3 case..
- What is the junction temperature rating for the BC850CE6327HTSA1?
The junction temperature rating is 150°C.
- What are some typical applications for the BC850CE6327HTSA1?
Typical applications include AF input stages, driver applications, and general-purpose amplification..
- What is the DC current gain (hFE) of the BC850CE6327HTSA1?
The DC current gain (hFE) is 420 at 2 mA and 5 V.
- Is the BC850CE6327HTSA1 RoHS compliant?
Yes, the BC850CE6327HTSA1 is RoHS compliant..
- What is the collector-emitter saturation voltage of the BC850CE6327HTSA1?
The collector-emitter saturation voltage is 600 mV at 5 mA and 100 mA.
- Can the BC850CE6327HTSA1 be used for high-frequency applications?
Yes, with a transition frequency of 250 MHz, it is suitable for high-frequency applications.
