Overview
The BC850CWE6327HTSA1 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This NPN transistor is designed for various electronic applications, particularly in audio frequency (AF) input stages and driver circuits. It is known for its high current gain and low collector-emitter saturation voltage, making it suitable for amplification and switching roles.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Breakdown Voltage (VCE) | 45 | V |
| Maximum Collector Current (IC) | 100 | mA |
| Peak Collector Current (ICM) | 200 | mA (tp ≤ 10 ms) |
| Total Power Dissipation (Ptot) | 250 | mW |
| Junction Temperature (Tj) | 150 | °C |
| Storage Temperature (Tstg) | -65 to 150 | °C |
| Transition Frequency (fT) | 250 | MHz |
| Collector-Base Capacitance (Ccb) | 0.95 | pF |
| Emitter-Base Capacitance (Ceb) | 9 | pF |
| DC Current Gain (hFE) | 110 to 520 | - |
| Collector-Emitter Saturation Voltage (VCEsat) | 90 to 600 | mV |
| Base-Emitter Saturation Voltage (VBEsat) | 700 to 900 | mV |
Key Features
- High current gain (hFE) ranging from 110 to 520, ensuring strong amplification capabilities.
- Low collector-emitter saturation voltage (VCEsat) of 90 to 600 mV, which is beneficial for efficient operation in saturation mode.
- High transition frequency (fT) of 250 MHz, suitable for high-frequency applications.
- Compact surface mount package (PG-SOT323), ideal for space-saving designs.
- High junction temperature (Tj) of 150°C, allowing for operation in a wide range of thermal conditions.
Applications
- AUDIO FREQUENCY (AF) INPUT STAGES: Suitable for amplifying audio signals due to its high current gain and low noise characteristics.
- DRIVER CIRCUITS: Can be used in driver stages for various electronic devices due to its ability to handle moderate currents and high frequencies.
- SWITCHING CIRCUITS: The low VCEsat and high hFE make it suitable for switching applications where fast and efficient switching is required.
- GENERAL PURPOSE AMPLIFIERS: Can be used in a variety of general-purpose amplifier circuits where high gain and low distortion are needed.
Q & A
- What is the maximum collector current of the BC850CWE6327HTSA1 transistor?
The maximum collector current (IC) is 100 mA, with a peak collector current (ICM) of 200 mA for pulses less than 10 ms.
- What is the transition frequency of this transistor?
The transition frequency (fT) is 250 MHz.
- What is the total power dissipation of the BC850CWE6327HTSA1?
The total power dissipation (Ptot) is 250 mW.
- What is the junction temperature range for this transistor?
The junction temperature (Tj) range is up to 150°C.
- What is the storage temperature range for this transistor?
The storage temperature (Tstg) range is from -65°C to 150°C.
- What are the typical applications of the BC850CWE6327HTSA1 transistor?
It is typically used in AF input stages, driver circuits, switching circuits, and general-purpose amplifiers.
- What is the DC current gain (hFE) range of this transistor?
The DC current gain (hFE) ranges from 110 to 520.
- What is the collector-emitter saturation voltage (VCEsat) of this transistor?
The collector-emitter saturation voltage (VCEsat) ranges from 90 to 600 mV.
- Is the BC850CWE6327HTSA1 still in production?
No, the BC850CWE6327HTSA1 is obsolete and no longer manufactured by Infineon Technologies.
- What are some possible substitutes for the BC850CWE6327HTSA1?
Substitutes include the BC847CW from Nexperia USA Inc., among others.
