IRF7410TRPBF
  • Share:

Infineon Technologies IRF7410TRPBF

Manufacturer No:
IRF7410TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 12V 16A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF7410TRPBF is a P-channel MOSFET produced by Infineon Technologies. This component is part of Infineon's HEXFET® family and is known for its high performance and reliability. The IRF7410TRPBF is packaged in an SO-8 (Small Outline 8-pin) package, making it suitable for surface mount technology (SMT) applications. It is designed to handle a drain-source voltage of -12V and a continuous drain current of -16A at 25°C, with a maximum power dissipation of 2.5W. This MOSFET is RoHS compliant and halogen-free, ensuring environmental friendliness and increased reliability.

Key Specifications

ParameterValueUnits
Drain-Source Voltage (VDS)-12V
Continuous Drain Current (ID) @ TA = 25°C, VGS = -4.5V-16A
Continuous Drain Current (ID) @ TA = 70°C, VGS = -4.5V-13A
Pulsed Drain Current (IDM)-65A
Power Dissipation (PD) @ TA = 25°C2.5W
Power Dissipation (PD) @ TA = 70°C1.6W
Gate-to-Source Voltage (VGS)±8V
Junction and Storage Temperature Range (TJ, TSTG)-55 to +150°C
Static Drain-to-Source On-Resistance (RDS(on)) @ VGS = -4.5V7

Key Features

  • Industry-standard SO-8 package for multi-vendor compatibility and ease of manufacturing.
  • HEXFET® technology for enhanced performance.
  • RoHS compliant and halogen-free, ensuring environmental friendliness.
  • MSL1 (Moisture Sensitivity Level 1) and industrial qualification for increased reliability.
  • Low on-resistance (RDS(on)) of 7 mΩ at VGS = -4.5V.
  • High continuous drain current capability of -16A at 25°C.

Applications

The IRF7410TRPBF is suitable for a variety of applications, including:

  • Power management systems requiring high current handling and low on-resistance.
  • Switching power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Audio and power amplifiers.
  • General-purpose switching applications where high reliability and performance are needed.

Q & A

  1. What is the maximum drain-source voltage of the IRF7410TRPBF?
    The maximum drain-source voltage (VDS) is -12V.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current (ID) at 25°C with VGS = -4.5V is -16A.
  3. What is the package type of the IRF7410TRPBF?
    The package type is SO-8 (Small Outline 8-pin).
  4. Is the IRF7410TRPBF RoHS compliant?
    Yes, the IRF7410TRPBF is RoHS compliant and halogen-free.
  5. What is the maximum power dissipation at 25°C?
    The maximum power dissipation (PD) at 25°C is 2.5W.
  6. What is the typical on-resistance (RDS(on)) at VGS = -4.5V?
    The typical on-resistance (RDS(on)) at VGS = -4.5V is 7 mΩ.
  7. What is the junction and storage temperature range?
    The junction and storage temperature range (TJ, TSTG) is -55 to +150°C.
  8. What is the gate-to-source voltage range?
    The gate-to-source voltage (VGS) range is ±8V.
  9. What are some common applications for the IRF7410TRPBF?
    Common applications include power management systems, switching power supplies, motor control, audio and power amplifiers, and general-purpose switching.
  10. How many pieces are in a standard reel packaging?
    A standard reel packaging contains 4000 pieces.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:8676 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$1.33
226

Please send RFQ , we will respond immediately.

Same Series
IRF7410PBF
IRF7410PBF
MOSFET P-CH 12V 16A 8SO

Similar Products

Part Number IRF7410TRPBF IRF7420TRPBF IRF7416TRPBF IRF7413TRPBF IRF7460TRPBF IRF7450TRPBF IRF7410GTRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Last Time Buy Active Obsolete Obsolete Obsolete Active
FET Type P-Channel P-Channel P-Channel N-Channel N-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 12 V 30 V 30 V 20 V 200 V 12 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta) 11.5A (Tc) 10A (Ta) 13A (Ta) 12A (Ta) 2.5A (Ta) 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 7mOhm @ 16A, 4.5V 14mOhm @ 11.5A, 4.5V 20mOhm @ 5.6A, 10V 11mOhm @ 7.3A, 10V 10mOhm @ 12A, 10V 170mOhm @ 1.5A, 10V 7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA 1V @ 250µA 3V @ 250µA 3V @ 250µA 5.5V @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 4.5 V 38 nC @ 4.5 V 92 nC @ 10 V 79 nC @ 10 V 19 nC @ 4.5 V 39 nC @ 10 V 91 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±20V ±20V ±20V ±30V ±8V
Input Capacitance (Ciss) (Max) @ Vds 8676 pF @ 10 V 3529 pF @ 10 V 1700 pF @ 25 V 1800 pF @ 25 V 2050 pF @ 10 V 940 pF @ 25 V 8676 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP

Related Product By Brand

BAS70-04E6327
BAS70-04E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BAS4005WE6327BTSA1
BAS4005WE6327BTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
BCX5116E6327HTSA1
BCX5116E6327HTSA1
Infineon Technologies
TRANS PNP 45V 1A SOT89-4
BC817K16E6327HTSA1
BC817K16E6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BC817K40WH6327XTSA1
BC817K40WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BC 807-40 E6433
BC 807-40 E6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT-23
BSC016N06NSTATMA1
BSC016N06NSTATMA1
Infineon Technologies
MOSFET N-CH 60V 31A/100A TDSON
IRF640NSTRLPBF
IRF640NSTRLPBF
Infineon Technologies
MOSFET N-CH 200V 18A D2PAK
IKW50N60TAFKSA1
IKW50N60TAFKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3
TLE72593GEXUMA3
TLE72593GEXUMA3
Infineon Technologies
IC TRANSCEIVER 1/1 DSO-8
BSP762TXUMA1
BSP762TXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 PDSO-8
S34ML01G100TFI000
S34ML01G100TFI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I