IRF7410TRPBF
  • Share:

Infineon Technologies IRF7410TRPBF

Manufacturer No:
IRF7410TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 12V 16A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF7410TRPBF is a P-channel MOSFET produced by Infineon Technologies. This component is part of Infineon's HEXFET® family and is known for its high performance and reliability. The IRF7410TRPBF is packaged in an SO-8 (Small Outline 8-pin) package, making it suitable for surface mount technology (SMT) applications. It is designed to handle a drain-source voltage of -12V and a continuous drain current of -16A at 25°C, with a maximum power dissipation of 2.5W. This MOSFET is RoHS compliant and halogen-free, ensuring environmental friendliness and increased reliability.

Key Specifications

ParameterValueUnits
Drain-Source Voltage (VDS)-12V
Continuous Drain Current (ID) @ TA = 25°C, VGS = -4.5V-16A
Continuous Drain Current (ID) @ TA = 70°C, VGS = -4.5V-13A
Pulsed Drain Current (IDM)-65A
Power Dissipation (PD) @ TA = 25°C2.5W
Power Dissipation (PD) @ TA = 70°C1.6W
Gate-to-Source Voltage (VGS)±8V
Junction and Storage Temperature Range (TJ, TSTG)-55 to +150°C
Static Drain-to-Source On-Resistance (RDS(on)) @ VGS = -4.5V7

Key Features

  • Industry-standard SO-8 package for multi-vendor compatibility and ease of manufacturing.
  • HEXFET® technology for enhanced performance.
  • RoHS compliant and halogen-free, ensuring environmental friendliness.
  • MSL1 (Moisture Sensitivity Level 1) and industrial qualification for increased reliability.
  • Low on-resistance (RDS(on)) of 7 mΩ at VGS = -4.5V.
  • High continuous drain current capability of -16A at 25°C.

Applications

The IRF7410TRPBF is suitable for a variety of applications, including:

  • Power management systems requiring high current handling and low on-resistance.
  • Switching power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Audio and power amplifiers.
  • General-purpose switching applications where high reliability and performance are needed.

Q & A

  1. What is the maximum drain-source voltage of the IRF7410TRPBF?
    The maximum drain-source voltage (VDS) is -12V.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current (ID) at 25°C with VGS = -4.5V is -16A.
  3. What is the package type of the IRF7410TRPBF?
    The package type is SO-8 (Small Outline 8-pin).
  4. Is the IRF7410TRPBF RoHS compliant?
    Yes, the IRF7410TRPBF is RoHS compliant and halogen-free.
  5. What is the maximum power dissipation at 25°C?
    The maximum power dissipation (PD) at 25°C is 2.5W.
  6. What is the typical on-resistance (RDS(on)) at VGS = -4.5V?
    The typical on-resistance (RDS(on)) at VGS = -4.5V is 7 mΩ.
  7. What is the junction and storage temperature range?
    The junction and storage temperature range (TJ, TSTG) is -55 to +150°C.
  8. What is the gate-to-source voltage range?
    The gate-to-source voltage (VGS) range is ±8V.
  9. What are some common applications for the IRF7410TRPBF?
    Common applications include power management systems, switching power supplies, motor control, audio and power amplifiers, and general-purpose switching.
  10. How many pieces are in a standard reel packaging?
    A standard reel packaging contains 4000 pieces.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:8676 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$1.33
226

Please send RFQ , we will respond immediately.

Same Series
IRF7410PBF
IRF7410PBF
MOSFET P-CH 12V 16A 8SO

Similar Products

Part Number IRF7410TRPBF IRF7420TRPBF IRF7416TRPBF IRF7413TRPBF IRF7460TRPBF IRF7450TRPBF IRF7410GTRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Last Time Buy Active Obsolete Obsolete Obsolete Active
FET Type P-Channel P-Channel P-Channel N-Channel N-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 12 V 30 V 30 V 20 V 200 V 12 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta) 11.5A (Tc) 10A (Ta) 13A (Ta) 12A (Ta) 2.5A (Ta) 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 7mOhm @ 16A, 4.5V 14mOhm @ 11.5A, 4.5V 20mOhm @ 5.6A, 10V 11mOhm @ 7.3A, 10V 10mOhm @ 12A, 10V 170mOhm @ 1.5A, 10V 7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA 1V @ 250µA 3V @ 250µA 3V @ 250µA 5.5V @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 4.5 V 38 nC @ 4.5 V 92 nC @ 10 V 79 nC @ 10 V 19 nC @ 4.5 V 39 nC @ 10 V 91 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±20V ±20V ±20V ±30V ±8V
Input Capacitance (Ciss) (Max) @ Vds 8676 pF @ 10 V 3529 pF @ 10 V 1700 pF @ 25 V 1800 pF @ 25 V 2050 pF @ 10 V 940 pF @ 25 V 8676 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAS40-06WE6327
BAS40-06WE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS7006B5003
BAS7006B5003
Infineon Technologies
SCHOTTKY DIODE
BAS 16U E6327
BAS 16U E6327
Infineon Technologies
RECTIFIER DIODE
BAS2103WE6327HTSA1
BAS2103WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOD323
BAS16WE6327HTSA1
BAS16WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BAS1602WH6327XTSA1
BAS1602WH6327XTSA1
Infineon Technologies
DIODE GEN PURP 80V 200MA SCD80-2
BCP 69US E6327
BCP 69US E6327
Infineon Technologies
TRANS PNP 20V 1A TSOP6-6
BC 817-40 E6327
BC 817-40 E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BC817K40E6359HTMA1
BC817K40E6359HTMA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
IRF7410TRPBF
IRF7410TRPBF
Infineon Technologies
MOSFET P-CH 12V 16A 8SO
BSS123E6327
BSS123E6327
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3