IRF7410TRPBF
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Infineon Technologies IRF7410TRPBF

Manufacturer No:
IRF7410TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 12V 16A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF7410TRPBF is a P-channel MOSFET produced by Infineon Technologies. This component is part of Infineon's HEXFET® family and is known for its high performance and reliability. The IRF7410TRPBF is packaged in an SO-8 (Small Outline 8-pin) package, making it suitable for surface mount technology (SMT) applications. It is designed to handle a drain-source voltage of -12V and a continuous drain current of -16A at 25°C, with a maximum power dissipation of 2.5W. This MOSFET is RoHS compliant and halogen-free, ensuring environmental friendliness and increased reliability.

Key Specifications

ParameterValueUnits
Drain-Source Voltage (VDS)-12V
Continuous Drain Current (ID) @ TA = 25°C, VGS = -4.5V-16A
Continuous Drain Current (ID) @ TA = 70°C, VGS = -4.5V-13A
Pulsed Drain Current (IDM)-65A
Power Dissipation (PD) @ TA = 25°C2.5W
Power Dissipation (PD) @ TA = 70°C1.6W
Gate-to-Source Voltage (VGS)±8V
Junction and Storage Temperature Range (TJ, TSTG)-55 to +150°C
Static Drain-to-Source On-Resistance (RDS(on)) @ VGS = -4.5V7

Key Features

  • Industry-standard SO-8 package for multi-vendor compatibility and ease of manufacturing.
  • HEXFET® technology for enhanced performance.
  • RoHS compliant and halogen-free, ensuring environmental friendliness.
  • MSL1 (Moisture Sensitivity Level 1) and industrial qualification for increased reliability.
  • Low on-resistance (RDS(on)) of 7 mΩ at VGS = -4.5V.
  • High continuous drain current capability of -16A at 25°C.

Applications

The IRF7410TRPBF is suitable for a variety of applications, including:

  • Power management systems requiring high current handling and low on-resistance.
  • Switching power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Audio and power amplifiers.
  • General-purpose switching applications where high reliability and performance are needed.

Q & A

  1. What is the maximum drain-source voltage of the IRF7410TRPBF?
    The maximum drain-source voltage (VDS) is -12V.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current (ID) at 25°C with VGS = -4.5V is -16A.
  3. What is the package type of the IRF7410TRPBF?
    The package type is SO-8 (Small Outline 8-pin).
  4. Is the IRF7410TRPBF RoHS compliant?
    Yes, the IRF7410TRPBF is RoHS compliant and halogen-free.
  5. What is the maximum power dissipation at 25°C?
    The maximum power dissipation (PD) at 25°C is 2.5W.
  6. What is the typical on-resistance (RDS(on)) at VGS = -4.5V?
    The typical on-resistance (RDS(on)) at VGS = -4.5V is 7 mΩ.
  7. What is the junction and storage temperature range?
    The junction and storage temperature range (TJ, TSTG) is -55 to +150°C.
  8. What is the gate-to-source voltage range?
    The gate-to-source voltage (VGS) range is ±8V.
  9. What are some common applications for the IRF7410TRPBF?
    Common applications include power management systems, switching power supplies, motor control, audio and power amplifiers, and general-purpose switching.
  10. How many pieces are in a standard reel packaging?
    A standard reel packaging contains 4000 pieces.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:8676 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Same Series
IRF7410PBF
IRF7410PBF
MOSFET P-CH 12V 16A 8SO

Similar Products

Part Number IRF7410TRPBF IRF7420TRPBF IRF7416TRPBF IRF7413TRPBF IRF7460TRPBF IRF7450TRPBF IRF7410GTRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Last Time Buy Active Obsolete Obsolete Obsolete Active
FET Type P-Channel P-Channel P-Channel N-Channel N-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 12 V 30 V 30 V 20 V 200 V 12 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta) 11.5A (Tc) 10A (Ta) 13A (Ta) 12A (Ta) 2.5A (Ta) 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 7mOhm @ 16A, 4.5V 14mOhm @ 11.5A, 4.5V 20mOhm @ 5.6A, 10V 11mOhm @ 7.3A, 10V 10mOhm @ 12A, 10V 170mOhm @ 1.5A, 10V 7mOhm @ 16A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA 1V @ 250µA 3V @ 250µA 3V @ 250µA 5.5V @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 4.5 V 38 nC @ 4.5 V 92 nC @ 10 V 79 nC @ 10 V 19 nC @ 4.5 V 39 nC @ 10 V 91 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±20V ±20V ±20V ±30V ±8V
Input Capacitance (Ciss) (Max) @ Vds 8676 pF @ 10 V 3529 pF @ 10 V 1700 pF @ 25 V 1800 pF @ 25 V 2050 pF @ 10 V 940 pF @ 25 V 8676 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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