IRF7416TRPBF
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Infineon Technologies IRF7416TRPBF

Manufacturer No:
IRF7416TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 10A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF7416TRPBF is a P-Channel MOSFET produced by Infineon Technologies. This device is part of Infineon's HEXFET® family, known for its high performance and reliability. The IRF7416TRPBF is packaged in an SO-8 (Small Outline 8) case, making it suitable for surface mount technology (SMT) applications. It is designed to handle high current and voltage requirements, making it a versatile component for various electronic systems.

Key Specifications

Parameter Value Units
Drain-Source Voltage (Vdss) -30 V
Continuous Drain Current (Id) @ 25°C -10 A
Pulsed Drain Current (Idm) -45 A
Power Dissipation (Pd) 2.5 W
Gate-to-Source Voltage (Vgs) ±20 V
Static Drain-to-Source On-Resistance (Rds(on)) @ Vgs = -10V, Id = -5.6A 0.035 Ω Ω
Operating Junction Temperature (Tj) -55 to +150 °C
Package Type SO-8
Mounting Type SMD

Key Features

  • High Current Capability: The IRF7416TRPBF can handle a continuous drain current of -10A and a pulsed drain current of -45A, making it suitable for high-power applications.
  • Low On-Resistance: With a static drain-to-source on-resistance of 0.035 Ω at Vgs = -10V and Id = -5.6A, this MOSFET minimizes power loss and enhances efficiency in switching circuits.
  • High Voltage Rating: The device has a drain-source voltage rating of -30V, ensuring robust performance in various voltage conditions.
  • Compact SO-8 Package: The SO-8 package is ideal for surface mount technology, offering a compact solution for modern electronic designs.
  • Enhanced HEXFET Technology: Infineon's HEXFET technology provides improved performance, reliability, and thermal management.

Applications

  • Power Management Systems: Suitable for power supply units, DC-DC converters, and other power management circuits due to its high current and voltage handling capabilities.
  • Motor Control: Can be used in motor control applications, including brushed and brushless DC motors, due to its high current and low on-resistance.
  • Switching Circuits: Ideal for high-frequency switching applications such as audio amplifiers, power inverters, and other high-power switching circuits.
  • Automotive Systems: Applicable in automotive systems that require high reliability and performance under varying temperature and voltage conditions.

Q & A

  1. What is the maximum continuous drain current of the IRF7416TRPBF?

    The maximum continuous drain current is -10A at 25°C.

  2. What is the drain-source voltage rating of the IRF7416TRPBF?

    The drain-source voltage rating is -30V.

  3. What is the package type of the IRF7416TRPBF?

    The package type is SO-8 (Small Outline 8).

  4. What is the typical on-resistance of the IRF7416TRPBF?

    The typical static drain-to-source on-resistance is 0.035 Ω at Vgs = -10V and Id = -5.6A.

  5. What is the operating junction temperature range of the IRF7416TRPBF?

    The operating junction temperature range is -55 to +150°C.

  6. Is the IRF7416TRPBF suitable for high-frequency switching applications?

    Yes, it is suitable due to its low on-resistance and high current handling capabilities.

  7. What is the maximum power dissipation of the IRF7416TRPBF?

    The maximum power dissipation is 2.5W.

  8. What technology is used in the IRF7416TRPBF?

    The IRF7416TRPBF uses Infineon's HEXFET technology.

  9. Is the IRF7416TRPBF RoHS compliant?

    Yes, the IRF7416TRPBF is RoHS compliant.

  10. What is the typical input capacitance of the IRF7416TRPBF?

    The typical input capacitance is 1700 pF at 25V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Part Number IRF7416TRPBF IRF7456TRPBF IRF7466TRPBF IRF7406TRPBF IRF7410TRPBF IRF7413TRPBF IRF7416GTRPBF IRF7416QTRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Last Time Buy Obsolete Last Time Buy Active Obsolete Obsolete Obsolete
FET Type P-Channel N-Channel N-Channel P-Channel P-Channel N-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 30 V 30 V 12 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta) 16A (Ta) 11A (Ta) 5.8A (Ta) 16A (Ta) 13A (Ta) 10A (Ta) 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.8V, 10V 4.5V, 10V 4.5V, 10V 1.8V, 4.5V 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 20mOhm @ 5.6A, 10V 6.5mOhm @ 16A, 10V 12.5mOhm @ 11A, 10V 45mOhm @ 2.8A, 10V 7mOhm @ 16A, 4.5V 11mOhm @ 7.3A, 10V 20mOhm @ 5.6A, 10V 20mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 2V @ 250µA 3V @ 250µA 1V @ 250µA 900mV @ 250µA 3V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V 62 nC @ 5 V 23 nC @ 4.5 V 59 nC @ 10 V 91 nC @ 4.5 V 79 nC @ 10 V 92 nC @ 10 V 92 nC @ 10 V
Vgs (Max) ±20V ±12V ±20V ±20V ±8V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V 3640 pF @ 15 V 2100 pF @ 15 V 1100 pF @ 25 V 8676 pF @ 10 V 1800 pF @ 25 V 1700 pF @ 25 V 1700 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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