IRF7416TRPBF
  • Share:

Infineon Technologies IRF7416TRPBF

Manufacturer No:
IRF7416TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 10A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF7416TRPBF is a P-Channel MOSFET produced by Infineon Technologies. This device is part of Infineon's HEXFET® family, known for its high performance and reliability. The IRF7416TRPBF is packaged in an SO-8 (Small Outline 8) case, making it suitable for surface mount technology (SMT) applications. It is designed to handle high current and voltage requirements, making it a versatile component for various electronic systems.

Key Specifications

Parameter Value Units
Drain-Source Voltage (Vdss) -30 V
Continuous Drain Current (Id) @ 25°C -10 A
Pulsed Drain Current (Idm) -45 A
Power Dissipation (Pd) 2.5 W
Gate-to-Source Voltage (Vgs) ±20 V
Static Drain-to-Source On-Resistance (Rds(on)) @ Vgs = -10V, Id = -5.6A 0.035 Ω Ω
Operating Junction Temperature (Tj) -55 to +150 °C
Package Type SO-8
Mounting Type SMD

Key Features

  • High Current Capability: The IRF7416TRPBF can handle a continuous drain current of -10A and a pulsed drain current of -45A, making it suitable for high-power applications.
  • Low On-Resistance: With a static drain-to-source on-resistance of 0.035 Ω at Vgs = -10V and Id = -5.6A, this MOSFET minimizes power loss and enhances efficiency in switching circuits.
  • High Voltage Rating: The device has a drain-source voltage rating of -30V, ensuring robust performance in various voltage conditions.
  • Compact SO-8 Package: The SO-8 package is ideal for surface mount technology, offering a compact solution for modern electronic designs.
  • Enhanced HEXFET Technology: Infineon's HEXFET technology provides improved performance, reliability, and thermal management.

Applications

  • Power Management Systems: Suitable for power supply units, DC-DC converters, and other power management circuits due to its high current and voltage handling capabilities.
  • Motor Control: Can be used in motor control applications, including brushed and brushless DC motors, due to its high current and low on-resistance.
  • Switching Circuits: Ideal for high-frequency switching applications such as audio amplifiers, power inverters, and other high-power switching circuits.
  • Automotive Systems: Applicable in automotive systems that require high reliability and performance under varying temperature and voltage conditions.

Q & A

  1. What is the maximum continuous drain current of the IRF7416TRPBF?

    The maximum continuous drain current is -10A at 25°C.

  2. What is the drain-source voltage rating of the IRF7416TRPBF?

    The drain-source voltage rating is -30V.

  3. What is the package type of the IRF7416TRPBF?

    The package type is SO-8 (Small Outline 8).

  4. What is the typical on-resistance of the IRF7416TRPBF?

    The typical static drain-to-source on-resistance is 0.035 Ω at Vgs = -10V and Id = -5.6A.

  5. What is the operating junction temperature range of the IRF7416TRPBF?

    The operating junction temperature range is -55 to +150°C.

  6. Is the IRF7416TRPBF suitable for high-frequency switching applications?

    Yes, it is suitable due to its low on-resistance and high current handling capabilities.

  7. What is the maximum power dissipation of the IRF7416TRPBF?

    The maximum power dissipation is 2.5W.

  8. What technology is used in the IRF7416TRPBF?

    The IRF7416TRPBF uses Infineon's HEXFET technology.

  9. Is the IRF7416TRPBF RoHS compliant?

    Yes, the IRF7416TRPBF is RoHS compliant.

  10. What is the typical input capacitance of the IRF7416TRPBF?

    The typical input capacitance is 1700 pF at 25V.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$1.13
692

Please send RFQ , we will respond immediately.

Same Series
IRF7416PBF
IRF7416PBF
MOSFET P-CH 30V 10A 8SO

Similar Products

Part Number IRF7416TRPBF IRF7456TRPBF IRF7466TRPBF IRF7406TRPBF IRF7410TRPBF IRF7413TRPBF IRF7416GTRPBF IRF7416QTRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Last Time Buy Obsolete Last Time Buy Active Obsolete Obsolete Obsolete
FET Type P-Channel N-Channel N-Channel P-Channel P-Channel N-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V 30 V 30 V 12 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta) 16A (Ta) 11A (Ta) 5.8A (Ta) 16A (Ta) 13A (Ta) 10A (Ta) 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.8V, 10V 4.5V, 10V 4.5V, 10V 1.8V, 4.5V 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 20mOhm @ 5.6A, 10V 6.5mOhm @ 16A, 10V 12.5mOhm @ 11A, 10V 45mOhm @ 2.8A, 10V 7mOhm @ 16A, 4.5V 11mOhm @ 7.3A, 10V 20mOhm @ 5.6A, 10V 20mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 2V @ 250µA 3V @ 250µA 1V @ 250µA 900mV @ 250µA 3V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V 62 nC @ 5 V 23 nC @ 4.5 V 59 nC @ 10 V 91 nC @ 4.5 V 79 nC @ 10 V 92 nC @ 10 V 92 nC @ 10 V
Vgs (Max) ±20V ±12V ±20V ±20V ±8V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V 3640 pF @ 15 V 2100 pF @ 15 V 1100 pF @ 25 V 8676 pF @ 10 V 1800 pF @ 25 V 1700 pF @ 25 V 1700 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAS 16U E6327
BAS 16U E6327
Infineon Technologies
RECTIFIER DIODE
BAS7004WE6327HTSA1
BAS7004WE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BAS4002LE6327
BAS4002LE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC857SH6327XTSA1
BC857SH6327XTSA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363-6
BC846SH6327XTSA1
BC846SH6327XTSA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC847PNE6327BTSA1
BC847PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC848BW
BC848BW
Infineon Technologies
TRANS NPN 30V 0.1A SOT323
BC858BE6327HTSA1
BC858BE6327HTSA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT-23
BC 856BW E6433
BC 856BW E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
BC 807-25 E6327
BC 807-25 E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
BTN8962TAAUMA1
BTN8962TAAUMA1
Infineon Technologies
IC MOTOR DRIVER PAR TO263-7
BTS3408GXUMA2
BTS3408GXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 8SOIC