FF600R12ME4PB11BOSA1
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Infineon Technologies FF600R12ME4PB11BOSA1

Manufacturer No:
FF600R12ME4PB11BOSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
IGBT MODULE VCES 600V 600A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FF600R12ME4PB11BOSA1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module produced by Infineon Technologies. This module is part of the EconoDUAL™ 3 series, designed for industrial applications requiring high power density and reliability. It features TRENCHSTOP™ IGBT4 technology, an emitter-controlled diode, and an integrated NTC (Negative Temperature Coefficient) thermistor. The module is housed in a standard EconoDUAL™ 3 package, which offers compact design, easy assembly, and no need for plugs and cables, making it ideal for low inductive system designs.

Key Specifications

Parameter Symbol Note or Test Condition Values Unit
Collector-emitter voltage VCES Tvj = 25 °C 1200 V
Continuous DC collector current ICDC Tvj max = 175 °C, TC = 100 °C 600 A
Repetitive peak collector current ICRM tp limited by Tvj op 1200 A
Gate-emitter peak voltage VGES ±20 V
Collector-emitter saturation voltage VCE sat IC = 600 A, VGE = 15 V, Tvj = 25 °C 1.75 - 2.10 V
Operating junction temperature Tvj op 150 °C
Weight 345 g

Key Features

  • Low VCE sat: The module features a low collector-emitter saturation voltage, enhancing efficiency and reducing losses.
  • High power density: Designed to offer high power density, making it suitable for compact and high-performance applications.
  • Isolated base plate: Ensures electrical isolation, which is crucial for safety and reliability in high-voltage applications.
  • Standard housing: Uses a standard EconoDUAL™ 3 package, facilitating easy integration and assembly.
  • VCE sat with positive temperature coefficient: This feature helps in ensuring stable operation over a wide temperature range.
  • Integrated NTC thermistor: Provides temperature monitoring, which is essential for thermal management and protection.

Applications

  • High-power converters: Suitable for high-power conversion applications due to its high current and voltage ratings.
  • Motor drives: Ideal for motor drive systems requiring high power density and reliability.
  • Servo drives: Used in servo drive applications where precise control and high performance are necessary.
  • UPS systems: Applicable in uninterruptible power supply systems for reliable power backup.
  • Wind turbines: Can be used in wind turbine systems for efficient power conversion.

Q & A

  1. What is the collector-emitter voltage rating of the FF600R12ME4PB11BOSA1?

    The collector-emitter voltage rating is 1200 V.

  2. What is the continuous DC collector current of this module?

    The continuous DC collector current is 600 A at a maximum junction temperature of 175 °C and case temperature of 100 °C.

  3. What is the repetitive peak collector current of the FF600R12ME4PB11BOSA1?

    The repetitive peak collector current is 1200 A, limited by the operating junction temperature.

  4. What is the operating junction temperature of this module?

    The operating junction temperature is up to 150 °C.

  5. Does the FF600R12ME4PB11BOSA1 have an isolated base plate?

    Yes, it has an isolated base plate for electrical isolation.

  6. What are the key applications of the FF600R12ME4PB11BOSA1?

    Key applications include high-power converters, motor drives, servo drives, UPS systems, and wind turbines.

  7. What is the weight of the FF600R12ME4PB11BOSA1 module?

    The weight of the module is 345 grams.

  8. Does the module include an integrated NTC thermistor?

    Yes, it includes an integrated NTC thermistor for temperature monitoring.

  9. What is the collector-emitter saturation voltage of the FF600R12ME4PB11BOSA1 at 25 °C?

    The collector-emitter saturation voltage at 25 °C is between 1.75 V and 2.10 V.

  10. Is the FF600R12ME4PB11BOSA1 qualified for industrial applications?

    Yes, it is qualified for industrial applications according to the relevant tests of IEC 60747, 60749, and 60068.

Product Attributes

IGBT Type:- 
Configuration:- 
Voltage - Collector Emitter Breakdown (Max):- 
Current - Collector (Ic) (Max):- 
Power - Max:- 
Vce(on) (Max) @ Vge, Ic:- 
Current - Collector Cutoff (Max):- 
Input Capacitance (Cies) @ Vce:- 
Input:- 
NTC Thermistor:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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$381.28
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Similar Products

Part Number FF600R12ME4PB11BOSA1 FF600R17ME4PB11BOSA1 FF600R12ME4AB11BOSA1 FF600R12ME4CB11BOSA1 FF600R12ME4EB11BOSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
IGBT Type - - Trench Field Stop Trench Field Stop Trench Field Stop
Configuration - - 2 Independent 2 Independent Half Bridge
Voltage - Collector Emitter Breakdown (Max) - - 1200 V 1200 V 1200 V
Current - Collector (Ic) (Max) - - - 1060 A 995 A
Power - Max - - 3350 W 4050 W 4050 W
Vce(on) (Max) @ Vge, Ic - - 2.1V @ 15V, 600A 2.1V @ 15V, 600A 2.1V @ 15V, 600A
Current - Collector Cutoff (Max) - - 3 mA 3 mA 3 mA
Input Capacitance (Cies) @ Vce - - 37 nF @ 25 V 37 nF @ 25 V 37 nF @ 25 V
Input - - Standard Standard Standard
NTC Thermistor - - Yes Yes Yes
Operating Temperature - - -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C
Mounting Type - - Chassis Mount Chassis Mount Chassis Mount
Package / Case - - Module Module Module
Supplier Device Package - - Module Module Module

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