FF600R12ME4WB73BPSA1
  • Share:

Infineon Technologies FF600R12ME4WB73BPSA1

Manufacturer No:
FF600R12ME4WB73BPSA1
Manufacturer:
Infineon Technologies
Package:
Tray
Description:
MEDIUM POWER ECONO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FF600R12ME4WB73BPSA1 is an EconoDUAL™ 3 module produced by Infineon Technologies. This module features TRENCHSTOP™ IGBT4 technology, an emitter-controlled diode, and an NTC (Negative Temperature Coefficient) thermistor. It is designed for high-power applications and is characterized by its high power density, low VCEsat (collector-emitter saturation voltage), and a positive temperature coefficient for VCEsat. The module is optimized for direct liquid-cooled heatsinks and offers a compact design with easy and reliable assembly using PressFIT contact technology and a wave structure on the base plate.

Key Specifications

Parameter Symbol Note or Test Condition Values Unit
Collector-emitter voltage VCES Tvj = 25°C 1200 V
Continuous DC collector current ICDC Tcj max = 175°C, TC = 100°C 600 A
Repetitive peak collector current ICRM tp limited by Tvj op 1200 A
Gate-emitter peak voltage VGES ±20 V
Collector-emitter saturation voltage VCE sat IC = 600 A, VGE = 15 V, Tvj = 25°C 1.75 - 2.10 V
Forward voltage (Diode) VF IF = 600 A, VGE = 0 V, Tvj = 25°C 1.65 - 2.10 V
Repetitive peak reverse voltage (Diode) VRRM Tvj = 25°C 1200 V
Continuous DC forward current (Diode) IF 600 A
Repetitive peak forward current (Diode) IFRM tp = 1 ms 1200 A
Operating junction temperature Tvj op -40 to 150 °C

Key Features

  • Wave structure on the base plate: Enhances thermal performance and reliability.
  • Low VCEsat: Reduces power losses and improves efficiency.
  • Positive temperature coefficient for VCEsat: Ensures stable operation over a wide temperature range.
  • High power density: Compact design with high current handling capability.
  • Isolated base plate: Provides electrical isolation and safety.
  • PressFIT contact technology: Simplifies and enhances the reliability of the assembly process.
  • No plugs and cables required: Streamlines the design and reduces potential failure points.

Applications

  • High-power converters: Suitable for high-power conversion applications due to its high current and voltage ratings.
  • Motor drives: Ideal for motor drive systems requiring high power and efficiency.
  • Servo drives: Used in servo drive applications where precise control and high power are necessary.
  • UPS systems: Employed in uninterruptible power supply systems for reliable power backup.
  • Wind turbines: Utilized in wind turbine systems to manage and convert electrical energy efficiently.

Q & A

  1. What is the collector-emitter voltage rating of the FF600R12ME4WB73BPSA1?

    The collector-emitter voltage rating is 1200 V.

  2. What is the continuous DC collector current of this module?

    The continuous DC collector current is 600 A.

  3. What is the repetitive peak collector current?

    The repetitive peak collector current is 1200 A.

  4. What is the operating junction temperature range?

    The operating junction temperature range is -40 to 150°C.

  5. What are the key features of the FF600R12ME4WB73BPSA1?

    Key features include low VCEsat, positive temperature coefficient for VCEsat, high power density, isolated base plate, and PressFIT contact technology.

  6. What applications is this module suitable for?

    This module is suitable for high-power converters, motor drives, servo drives, UPS systems, and wind turbines.

  7. What is the forward voltage of the diode in this module?

    The forward voltage of the diode is between 1.65 and 2.10 V at IF = 600 A and Tvj = 25°C.

  8. Does this module require any plugs or cables for assembly?

    No, this module does not require any plugs or cables for assembly due to its PressFIT contact technology.

  9. Is the base plate of this module isolated?

    Yes, the base plate of this module is isolated.

  10. What is the benefit of the wave structure on the base plate?

    The wave structure on the base plate enhances thermal performance and reliability.

Product Attributes

IGBT Type:Trench Field Stop
Configuration:2 Independent
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):600 A
Power - Max:20 mW
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 600A
Current - Collector Cutoff (Max):3 mA
Input Capacitance (Cies) @ Vce:37 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:AG-ECONOD
0 Remaining View Similar

In Stock

$400.48
3

Please send RFQ , we will respond immediately.

Same Series
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP

Related Product By Categories

FF600R12ME4BOSA1
FF600R12ME4BOSA1
Infineon Technologies
IGBT MODULE 1200V 4050W
FS820R08A6P2LBBPSA1
FS820R08A6P2LBBPSA1
Infineon Technologies
IGBT MODULE 820A HYBRID PK DRIVE
FF600R12ME4AB11BOSA1
FF600R12ME4AB11BOSA1
Infineon Technologies
IGBT MODULE 1200V 3350W
A1C15S12M3
A1C15S12M3
STMicroelectronics
IGBT MOD 1200V 15A ACEPACK1
FF600R12ME4PB72BPSA1
FF600R12ME4PB72BPSA1
Infineon Technologies
MEDIUM POWER ECONO
FF600R12ME4EB11BPSA1
FF600R12ME4EB11BPSA1
Infineon Technologies
MEDIUM POWER ECONO
FF600R12ME4PBOSA1
FF600R12ME4PBOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
FF600R12ME4PB11BOSA1
FF600R12ME4PB11BOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
FF600R12ME4CPB11BPSA1
FF600R12ME4CPB11BPSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
FF600R12ME4AB11BPSA1
FF600R12ME4AB11BPSA1
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
FF600R12ME4CB11BOSA1
FF600R12ME4CB11BOSA1
Infineon Technologies
IGBT MOD 1200V 1060A 4050W
A1C15S12M3-F
A1C15S12M3-F
STMicroelectronics
IGBT MOD 1200V 15A ACEPACK1

Related Product By Brand

BAS4007WH6327
BAS4007WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS40-04B5003
BAS40-04B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BCV62BE6327HTSA1
BCV62BE6327HTSA1
Infineon Technologies
TRANS 2PNP 30V 0.1A SOT143
BC857SH6327XTSA1
BC857SH6327XTSA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363-6
BC846AE6433
BC846AE6433
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC858BE6327HTSA1
BC858BE6327HTSA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT-23
BCP5310H6327XTSA1
BCP5310H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
BC 817-25W E6327
BC 817-25W E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BC 856B E6433
BC 856B E6433
Infineon Technologies
TRANS PNP 65V 0.1A SOT23
BC847BWE6433HTMA1
BC847BWE6433HTMA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BSC0702LSATMA1
BSC0702LSATMA1
Infineon Technologies
MOSFET N-CH 60V 100A SUPERSO8
BSS138W E6327
BSS138W E6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3