BC856BE6327
  • Share:

Infineon Technologies BC856BE6327

Manufacturer No:
BC856BE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856BE6327 is a bipolar general-purpose transistor manufactured by Infineon Technologies. This PNP transistor is designed for a wide range of applications requiring small signal amplification and switching. It is known for its reliability, low noise, and high current gain, making it a versatile component in various electronic circuits.

Key Specifications

Parameter Value Unit
Transistor Type PNP -
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V -
Power - Max 330 mW
Frequency - Transition 250 MHz
Operating Temperature 150 °C (TJ)
Package TO-236-3, SC-59, SOT-23-3 -
RoHS Status Compliant -

Key Features

  • High Current Gain: The BC856BE6327 offers a minimum DC current gain (hFE) of 220 at 2mA and 5V, ensuring reliable amplification.
  • Low Vce Saturation: With a maximum Vce saturation of 650mV at 5mA and 100mA, this transistor minimizes power losses in switching applications.
  • High Breakdown Voltage: The transistor has a maximum collector-emitter breakdown voltage of 65V, making it suitable for a variety of voltage levels.
  • Compact Packaging: Available in TO-236-3, SC-59, and SOT-23-3 packages, this transistor is ideal for space-constrained designs.
  • RoHS Compliance: The BC856BE6327 is RoHS compliant, ensuring it meets environmental standards for lead-free and hazardous substance reduction.

Applications

  • General Purpose Amplification: Suitable for small signal amplification in audio, video, and other electronic circuits.
  • Switching Circuits: Used in switching applications due to its low Vce saturation and high current gain.
  • Automotive Electronics: Can be used in automotive systems requiring reliable and robust transistor performance.
  • Consumer Electronics: Found in various consumer electronic devices such as radios, TVs, and other household appliances.

Q & A

  1. What is the maximum collector current of the BC856BE6327?

    The maximum collector current is 100 mA.

  2. What is the breakdown voltage of the BC856BE6327?

    The maximum collector-emitter breakdown voltage is 65 V.

  3. What is the typical DC current gain (hFE) of the BC856BE6327?

    The minimum DC current gain (hFE) is 220 at 2mA and 5V.

  4. What are the available package types for the BC856BE6327?

    The transistor is available in TO-236-3, SC-59, and SOT-23-3 packages.

  5. Is the BC856BE6327 RoHS compliant?
  6. What is the maximum operating temperature of the BC856BE6327?

    The maximum operating temperature (TJ) is 150°C.

  7. What is the transition frequency of the BC856BE6327?

    The transition frequency is 250 MHz.

  8. What are some common applications of the BC856BE6327?

    It is used in general-purpose amplification, switching circuits, automotive electronics, and consumer electronics.

  9. What is the maximum power dissipation of the BC856BE6327?

    The maximum power dissipation is 330 mW.

  10. What is the collector cutoff current (ICBO) of the BC856BE6327?

    The collector cutoff current (ICBO) is 15 nA.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
190

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V50/AA
DD26S2S50V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC856BE6327 BC856BWE6327 BC850BE6327 BC856AE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
Transistor Type - - NPN -
Current - Collector (Ic) (Max) - - 100 mA -
Voltage - Collector Emitter Breakdown (Max) - - 45 V -
Vce Saturation (Max) @ Ib, Ic - - 600mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) - - 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce - - 200 @ 2mA, 5V -
Power - Max - - 330 mW -
Frequency - Transition - - 250MHz -
Operating Temperature - - 150°C (TJ) -
Mounting Type - - Surface Mount -
Package / Case - - TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package - - PG-SOT23 -

Related Product By Categories

MMBT100
MMBT100
onsemi
TRANS NPN 45V 0.5A SOT23-3
MJD42CT4G
MJD42CT4G
onsemi
TRANS PNP 100V 6A DPAK
BC858B,215
BC858B,215
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
BCX17,235
BCX17,235
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
BCP69-16/S500115
BCP69-16/S500115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
ST13007
ST13007
STMicroelectronics
TRANS NPN 400V 8A TO220
NSS60200LT1G
NSS60200LT1G
onsemi
TRANS PNP 60V 2A SOT23-3
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
MMBT3906L3-TP
MMBT3906L3-TP
Micro Commercial Co
TRANS PNP 40V 0.2A DFN1006-3
BCX56-10R1
BCX56-10R1
onsemi
TRANS NPN 80V 1A SOT89-3
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
BC847CW/ZLF
BC847CW/ZLF
Nexperia USA Inc.
TRANS SOT323

Related Product By Brand

BAS4006WH6327XTSA1
BAS4006WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT323
BAS28
BAS28
Infineon Technologies
SWITCHING DIODE ARRAY
BAS 70-04 B5003
BAS 70-04 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT23
BFG135AE6327XT
BFG135AE6327XT
Infineon Technologies
RF TRANS NPN 15V 6GHZ SOT223-4
MMBT3906LT1
MMBT3906LT1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23-3
BC848B-E6327
BC848B-E6327
Infineon Technologies
TRANS NPN 30V 0.1A SOT23
BCV26E327
BCV26E327
Infineon Technologies
TRANS PNP DARL 30V 0.5A SOT23
BC 807-25 B5003
BC 807-25 B5003
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
BCP 54-16 E6327
BCP 54-16 E6327
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
IPD60R180P7SAUMA1
IPD60R180P7SAUMA1
Infineon Technologies
MOSFET N-CH 600V 18A TO252-3
IRF100B201
IRF100B201
Infineon Technologies
MOSFET N-CH 100V 192A TO220AB
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3