BC856BE6327
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Infineon Technologies BC856BE6327

Manufacturer No:
BC856BE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856BE6327 is a bipolar general-purpose transistor manufactured by Infineon Technologies. This PNP transistor is designed for a wide range of applications requiring small signal amplification and switching. It is known for its reliability, low noise, and high current gain, making it a versatile component in various electronic circuits.

Key Specifications

Parameter Value Unit
Transistor Type PNP -
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V -
Power - Max 330 mW
Frequency - Transition 250 MHz
Operating Temperature 150 °C (TJ)
Package TO-236-3, SC-59, SOT-23-3 -
RoHS Status Compliant -

Key Features

  • High Current Gain: The BC856BE6327 offers a minimum DC current gain (hFE) of 220 at 2mA and 5V, ensuring reliable amplification.
  • Low Vce Saturation: With a maximum Vce saturation of 650mV at 5mA and 100mA, this transistor minimizes power losses in switching applications.
  • High Breakdown Voltage: The transistor has a maximum collector-emitter breakdown voltage of 65V, making it suitable for a variety of voltage levels.
  • Compact Packaging: Available in TO-236-3, SC-59, and SOT-23-3 packages, this transistor is ideal for space-constrained designs.
  • RoHS Compliance: The BC856BE6327 is RoHS compliant, ensuring it meets environmental standards for lead-free and hazardous substance reduction.

Applications

  • General Purpose Amplification: Suitable for small signal amplification in audio, video, and other electronic circuits.
  • Switching Circuits: Used in switching applications due to its low Vce saturation and high current gain.
  • Automotive Electronics: Can be used in automotive systems requiring reliable and robust transistor performance.
  • Consumer Electronics: Found in various consumer electronic devices such as radios, TVs, and other household appliances.

Q & A

  1. What is the maximum collector current of the BC856BE6327?

    The maximum collector current is 100 mA.

  2. What is the breakdown voltage of the BC856BE6327?

    The maximum collector-emitter breakdown voltage is 65 V.

  3. What is the typical DC current gain (hFE) of the BC856BE6327?

    The minimum DC current gain (hFE) is 220 at 2mA and 5V.

  4. What are the available package types for the BC856BE6327?

    The transistor is available in TO-236-3, SC-59, and SOT-23-3 packages.

  5. Is the BC856BE6327 RoHS compliant?
  6. What is the maximum operating temperature of the BC856BE6327?

    The maximum operating temperature (TJ) is 150°C.

  7. What is the transition frequency of the BC856BE6327?

    The transition frequency is 250 MHz.

  8. What are some common applications of the BC856BE6327?

    It is used in general-purpose amplification, switching circuits, automotive electronics, and consumer electronics.

  9. What is the maximum power dissipation of the BC856BE6327?

    The maximum power dissipation is 330 mW.

  10. What is the collector cutoff current (ICBO) of the BC856BE6327?

    The collector cutoff current (ICBO) is 15 nA.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BC856BE6327 BC856BWE6327 BC850BE6327 BC856AE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
Transistor Type - - NPN -
Current - Collector (Ic) (Max) - - 100 mA -
Voltage - Collector Emitter Breakdown (Max) - - 45 V -
Vce Saturation (Max) @ Ib, Ic - - 600mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) - - 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce - - 200 @ 2mA, 5V -
Power - Max - - 330 mW -
Frequency - Transition - - 250MHz -
Operating Temperature - - 150°C (TJ) -
Mounting Type - - Surface Mount -
Package / Case - - TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package - - PG-SOT23 -

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