BC856BE6327
  • Share:

Infineon Technologies BC856BE6327

Manufacturer No:
BC856BE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856BE6327 is a bipolar general-purpose transistor manufactured by Infineon Technologies. This PNP transistor is designed for a wide range of applications requiring small signal amplification and switching. It is known for its reliability, low noise, and high current gain, making it a versatile component in various electronic circuits.

Key Specifications

Parameter Value Unit
Transistor Type PNP -
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V -
Power - Max 330 mW
Frequency - Transition 250 MHz
Operating Temperature 150 °C (TJ)
Package TO-236-3, SC-59, SOT-23-3 -
RoHS Status Compliant -

Key Features

  • High Current Gain: The BC856BE6327 offers a minimum DC current gain (hFE) of 220 at 2mA and 5V, ensuring reliable amplification.
  • Low Vce Saturation: With a maximum Vce saturation of 650mV at 5mA and 100mA, this transistor minimizes power losses in switching applications.
  • High Breakdown Voltage: The transistor has a maximum collector-emitter breakdown voltage of 65V, making it suitable for a variety of voltage levels.
  • Compact Packaging: Available in TO-236-3, SC-59, and SOT-23-3 packages, this transistor is ideal for space-constrained designs.
  • RoHS Compliance: The BC856BE6327 is RoHS compliant, ensuring it meets environmental standards for lead-free and hazardous substance reduction.

Applications

  • General Purpose Amplification: Suitable for small signal amplification in audio, video, and other electronic circuits.
  • Switching Circuits: Used in switching applications due to its low Vce saturation and high current gain.
  • Automotive Electronics: Can be used in automotive systems requiring reliable and robust transistor performance.
  • Consumer Electronics: Found in various consumer electronic devices such as radios, TVs, and other household appliances.

Q & A

  1. What is the maximum collector current of the BC856BE6327?

    The maximum collector current is 100 mA.

  2. What is the breakdown voltage of the BC856BE6327?

    The maximum collector-emitter breakdown voltage is 65 V.

  3. What is the typical DC current gain (hFE) of the BC856BE6327?

    The minimum DC current gain (hFE) is 220 at 2mA and 5V.

  4. What are the available package types for the BC856BE6327?

    The transistor is available in TO-236-3, SC-59, and SOT-23-3 packages.

  5. Is the BC856BE6327 RoHS compliant?
  6. What is the maximum operating temperature of the BC856BE6327?

    The maximum operating temperature (TJ) is 150°C.

  7. What is the transition frequency of the BC856BE6327?

    The transition frequency is 250 MHz.

  8. What are some common applications of the BC856BE6327?

    It is used in general-purpose amplification, switching circuits, automotive electronics, and consumer electronics.

  9. What is the maximum power dissipation of the BC856BE6327?

    The maximum power dissipation is 330 mW.

  10. What is the collector cutoff current (ICBO) of the BC856BE6327?

    The collector cutoff current (ICBO) is 15 nA.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
190

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC856BE6327 BC856BWE6327 BC850BE6327 BC856AE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
Transistor Type - - NPN -
Current - Collector (Ic) (Max) - - 100 mA -
Voltage - Collector Emitter Breakdown (Max) - - 45 V -
Vce Saturation (Max) @ Ib, Ic - - 600mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) - - 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce - - 200 @ 2mA, 5V -
Power - Max - - 330 mW -
Frequency - Transition - - 250MHz -
Operating Temperature - - 150°C (TJ) -
Mounting Type - - Surface Mount -
Package / Case - - TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package - - PG-SOT23 -

Related Product By Categories

BC846AW,115
BC846AW,115
Nexperia USA Inc.
TRANS NPN 65V 0.1A SOT323
SMMBTA92LT1G
SMMBTA92LT1G
onsemi
TRANS PNP 300V 0.5A SOT23-3
TIP29C
TIP29C
STMicroelectronics
TRANS NPN 100V 1A TO220
BC817-25
BC817-25
Diotec Semiconductor
TRANS NPN 45V 0.8A SOT23-3
BC817K-25HVL
BC817K-25HVL
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
BC846BLT3G
BC846BLT3G
onsemi
TRANS NPN 65V 0.1A SOT23-3
MMBT5550LT1G
MMBT5550LT1G
onsemi
TRANS NPN 140V 0.6A SOT23-3
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
MMBT2484
MMBT2484
Fairchild Semiconductor
TRANS NPN 60V 0.1A SOT23-3
BCX56-10R1
BCX56-10R1
onsemi
TRANS NPN 80V 1A SOT89-3
BCP5610E6327HTSA1
BCP5610E6327HTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT223-4
PN2222AG
PN2222AG
onsemi
TRANS NPN 40V 0.6A TO92

Related Product By Brand

BAS21UE6359HTMA1
BAS21UE6359HTMA1
Infineon Technologies
DIODE GP 200V 125MA SC74
BAS2103WE6327HTSA1
BAS2103WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOD323
BC817UPNB6327XT
BC817UPNB6327XT
Infineon Technologies
TRANS NPN/PNP 45V 0.5A SC74-6
BCV47E6433HTMA1
BCV47E6433HTMA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
BCX5310E6327HTSA1
BCX5310E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BCX5616E6433HTMA1
BCX5616E6433HTMA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
BSS138WH6433XTMA1
BSS138WH6433XTMA1
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
BTS723GWXUMA1
BTS723GWXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-14
BTS428L2XT
BTS428L2XT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
IR3898MTRPBF
IR3898MTRPBF
Infineon Technologies
IC REG BUCK ADJUSTABLE 6A 16PQFN
TLF35584QVVS1XUMA2
TLF35584QVVS1XUMA2
Infineon Technologies
IC REG AUTO APPL 1OUT VQFN-48-31