BC856BE6327
  • Share:

Infineon Technologies BC856BE6327

Manufacturer No:
BC856BE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856BE6327 is a bipolar general-purpose transistor manufactured by Infineon Technologies. This PNP transistor is designed for a wide range of applications requiring small signal amplification and switching. It is known for its reliability, low noise, and high current gain, making it a versatile component in various electronic circuits.

Key Specifications

Parameter Value Unit
Transistor Type PNP -
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V -
Power - Max 330 mW
Frequency - Transition 250 MHz
Operating Temperature 150 °C (TJ)
Package TO-236-3, SC-59, SOT-23-3 -
RoHS Status Compliant -

Key Features

  • High Current Gain: The BC856BE6327 offers a minimum DC current gain (hFE) of 220 at 2mA and 5V, ensuring reliable amplification.
  • Low Vce Saturation: With a maximum Vce saturation of 650mV at 5mA and 100mA, this transistor minimizes power losses in switching applications.
  • High Breakdown Voltage: The transistor has a maximum collector-emitter breakdown voltage of 65V, making it suitable for a variety of voltage levels.
  • Compact Packaging: Available in TO-236-3, SC-59, and SOT-23-3 packages, this transistor is ideal for space-constrained designs.
  • RoHS Compliance: The BC856BE6327 is RoHS compliant, ensuring it meets environmental standards for lead-free and hazardous substance reduction.

Applications

  • General Purpose Amplification: Suitable for small signal amplification in audio, video, and other electronic circuits.
  • Switching Circuits: Used in switching applications due to its low Vce saturation and high current gain.
  • Automotive Electronics: Can be used in automotive systems requiring reliable and robust transistor performance.
  • Consumer Electronics: Found in various consumer electronic devices such as radios, TVs, and other household appliances.

Q & A

  1. What is the maximum collector current of the BC856BE6327?

    The maximum collector current is 100 mA.

  2. What is the breakdown voltage of the BC856BE6327?

    The maximum collector-emitter breakdown voltage is 65 V.

  3. What is the typical DC current gain (hFE) of the BC856BE6327?

    The minimum DC current gain (hFE) is 220 at 2mA and 5V.

  4. What are the available package types for the BC856BE6327?

    The transistor is available in TO-236-3, SC-59, and SOT-23-3 packages.

  5. Is the BC856BE6327 RoHS compliant?
  6. What is the maximum operating temperature of the BC856BE6327?

    The maximum operating temperature (TJ) is 150°C.

  7. What is the transition frequency of the BC856BE6327?

    The transition frequency is 250 MHz.

  8. What are some common applications of the BC856BE6327?

    It is used in general-purpose amplification, switching circuits, automotive electronics, and consumer electronics.

  9. What is the maximum power dissipation of the BC856BE6327?

    The maximum power dissipation is 330 mW.

  10. What is the collector cutoff current (ICBO) of the BC856BE6327?

    The collector cutoff current (ICBO) is 15 nA.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
190

Please send RFQ , we will respond immediately.

Same Series
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC856BE6327 BC856BWE6327 BC850BE6327 BC856AE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
Transistor Type - - NPN -
Current - Collector (Ic) (Max) - - 100 mA -
Voltage - Collector Emitter Breakdown (Max) - - 45 V -
Vce Saturation (Max) @ Ib, Ic - - 600mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) - - 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce - - 200 @ 2mA, 5V -
Power - Max - - 330 mW -
Frequency - Transition - - 250MHz -
Operating Temperature - - 150°C (TJ) -
Mounting Type - - Surface Mount -
Package / Case - - TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package - - PG-SOT23 -

Related Product By Categories

PMBT5550,235
PMBT5550,235
Nexperia USA Inc.
TRANS NPN 140V 0.3A TO236AB
BC817-25
BC817-25
Diotec Semiconductor
TRANS NPN 45V 0.8A SOT23-3
2N6491
2N6491
Harris Corporation
TRANS PNP 80V 15A TO220AB
2SC5658M3T5G
2SC5658M3T5G
onsemi
TRANS NPN 50V 0.1A SOT723
BC857B,235
BC857B,235
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
BC856BMBYL
BC856BMBYL
Nexperia USA Inc.
TRANS PNP 60V 0.1A DFN1006B-3
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
MJE340STU
MJE340STU
onsemi
TRANS NPN 300V 0.5A TO126-3
TIP122-BP
TIP122-BP
Micro Commercial Co
TRANS NPN DARL 100V 5A TO220AB
BC 817-16 E6327
BC 817-16 E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
PHD13005AD,127
PHD13005AD,127
NXP USA Inc.
TRANS NPN 700V 4A DPAK

Related Product By Brand

BAS 16U E6327
BAS 16U E6327
Infineon Technologies
RECTIFIER DIODE
BAS70-06E6327
BAS70-06E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BCV47E6433HTMA1
BCV47E6433HTMA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
BC 807-16 E6327
BC 807-16 E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT-23
IPD60R180P7SAUMA1
IPD60R180P7SAUMA1
Infineon Technologies
MOSFET N-CH 600V 18A TO252-3
IRF7410TRPBF
IRF7410TRPBF
Infineon Technologies
MOSFET P-CH 12V 16A 8SO
IRFR5305TRPBF
IRFR5305TRPBF
Infineon Technologies
MOSFET P-CH 55V 31A DPAK
BSS138W E6327
BSS138W E6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
2N7002L6327HTSA1
2N7002L6327HTSA1
Infineon Technologies
MOSFET N-CH 60V 300MA SOT23-3
IPB072N15N3GE8187ATMA1
IPB072N15N3GE8187ATMA1
Infineon Technologies
MOSFET N-CH 150V 100A TO263-3
BTM7752GXUMA1
BTM7752GXUMA1
Infineon Technologies
IC MOTOR DRIVER 5.5V-28V 36DSO
BSP452 E6327
BSP452 E6327
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4