BC856AE6327
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Infineon Technologies BC856AE6327

Manufacturer No:
BC856AE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
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Payment:
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Product Introduction

Overview

The BC856AE6327 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This PNP transistor is designed for general-purpose applications and is packaged in a SOT-23-3 (TO-236-3, SC-59) surface mount package. It is RoHS compliant and lead-free, ensuring environmental sustainability and compliance with regulatory standards.

This transistor is characterized by its high current gain, low saturation voltage, and high transition frequency, making it suitable for a wide range of electronic circuits. The BC856AE6327 operates within a collector-emitter voltage range of up to 65V and can handle a maximum collector current of 100mA.

Key Specifications

Attribute Value
Manufacturer Infineon Technologies
Part Number BC856AE6327
Package SOT-23-3 (TO-236-3, SC-59)
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 65V
Current - Collector (Max) 100mA
DC Current Gain (HFE) (Min) @ IC, VCE 125 @ 2mA, 5V
Frequency - Transition 250MHz
Power - Max 330mW
VCE Saturation (Max) @ IB, IC 650mV @ 5mA, 100mA
Operating Temperature 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status Lead free/RoHS Compliant

Key Features

  • High Current Gain: The BC856AE6327 has a minimum DC current gain (HFE) of 125 at 2mA and 5V, ensuring reliable amplification in various circuits.
  • Low Saturation Voltage: With a VCE saturation of 650mV at 5mA and 100mA, this transistor minimizes power losses in switching applications.
  • High Transition Frequency: A transition frequency of 250MHz makes it suitable for high-frequency applications.
  • Surface Mount Package: The SOT-23-3 package is compact and ideal for surface mount technology (SMT) assembly, reducing board space and enhancing manufacturing efficiency.
  • RoHS Compliant: Lead-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Applications

  • General-Purpose Amplification: Suitable for a wide range of amplification tasks in electronic circuits.
  • Switching Circuits: The low saturation voltage and high current gain make it ideal for switching applications.
  • High-Frequency Circuits: The high transition frequency of 250MHz makes it suitable for high-frequency applications such as radio frequency (RF) circuits and audio amplifiers.
  • Automotive and Industrial Electronics: Can be used in various automotive and industrial electronic systems due to its robust specifications and surface mount packaging.

Q & A

  1. What is the part number of this transistor?

    The part number of this transistor is BC856AE6327.

  2. Who is the manufacturer of the BC856AE6327 transistor?

    The manufacturer is Infineon Technologies.

  3. What is the package type of the BC856AE6327 transistor?

    The package type is SOT-23-3 (TO-236-3, SC-59).

  4. What is the maximum collector-emitter voltage of the BC856AE6327 transistor?

    The maximum collector-emitter voltage is 65V.

  5. What is the minimum DC current gain (HFE) of the BC856AE6327 transistor?

    The minimum DC current gain (HFE) is 125 at 2mA and 5V.

  6. What is the transition frequency of the BC856AE6327 transistor?

    The transition frequency is 250MHz.

  7. Is the BC856AE6327 transistor RoHS compliant?

    Yes, the BC856AE6327 transistor is lead-free and RoHS compliant.

  8. What is the maximum power dissipation of the BC856AE6327 transistor?

    The maximum power dissipation is 330mW.

  9. What is the operating temperature range of the BC856AE6327 transistor?

    The operating temperature range is up to 150°C (TJ).

  10. What are some common applications of the BC856AE6327 transistor?

    Common applications include general-purpose amplification, switching circuits, high-frequency circuits, and various automotive and industrial electronic systems.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Part Number BC856AE6327 BC856BE6327 BC856A-E6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type - - -
Current - Collector (Ic) (Max) - - -
Voltage - Collector Emitter Breakdown (Max) - - -
Vce Saturation (Max) @ Ib, Ic - - -
Current - Collector Cutoff (Max) - - -
DC Current Gain (hFE) (Min) @ Ic, Vce - - -
Power - Max - - -
Frequency - Transition - - -
Operating Temperature - - -
Mounting Type - - -
Package / Case - - -
Supplier Device Package - - -

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