BC856A-E6327
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Infineon Technologies BC856A-E6327

Manufacturer No:
BC856A-E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
BIPOLAR GEN PURPOSE TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856A-E6327 is a PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for use in audio frequency (AF) input stages and driver applications. It is known for its high current gain and low collector-emitter saturation voltage, making it suitable for a variety of electronic circuits.

Key Specifications

ParameterValueUnit
Transistor TypePNP
Collector-Emitter Breakdown Voltage (VCEO)65V
Collector Current (IC)100mA
Transition Frequency (fT)250MHz
DC Current Gain (hFE) @ IC = 2 mA, VCE = 5 V125
Collector-Emitter Saturation Voltage (VCEsat) @ IB = 5 mA, IC = 100 mA650 mV
Power Dissipation (Ptot)330 mW
Junction Temperature (Tj)150°C
PackagePG-SOT23-3
Lead Free Status / RoHS StatusLead Free / RoHS Compliant

Key Features

  • High current gain (hFE) of 125 at IC = 2 mA, VCE = 5 V
  • Low collector-emitter saturation voltage (VCEsat) of 650 mV at IB = 5 mA, IC = 100 mA
  • Transition frequency (fT) of 250 MHz
  • Surface mount package (PG-SOT23-3) for compact designs
  • Lead-free and RoHS compliant

Applications

The BC856A-E6327 is suitable for various applications including audio frequency input stages, driver stages, and general-purpose amplification. It is particularly useful in circuits requiring high current gain and low saturation voltage.

Q & A

  1. What is the transistor type of the BC856A-E6327?
    The BC856A-E6327 is a PNP bipolar junction transistor.
  2. What is the maximum collector-emitter breakdown voltage of the BC856A-E6327?
    The maximum collector-emitter breakdown voltage is 65 V.
  3. What is the maximum collector current of the BC856A-E6327?
    The maximum collector current is 100 mA.
  4. What is the transition frequency of the BC856A-E6327?
    The transition frequency is 250 MHz.
  5. What is the DC current gain of the BC856A-E6327 at IC = 2 mA, VCE = 5 V?
    The DC current gain is 125.
  6. What is the collector-emitter saturation voltage of the BC856A-E6327 at IB = 5 mA, IC = 100 mA?
    The collector-emitter saturation voltage is 650 mV.
  7. What is the power dissipation of the BC856A-E6327?
    The power dissipation is 330 mW.
  8. What is the junction temperature of the BC856A-E6327?
    The junction temperature is 150°C.
  9. What package type is the BC856A-E6327 available in?
    The BC856A-E6327 is available in the PG-SOT23-3 surface mount package.
  10. Is the BC856A-E6327 lead-free and RoHS compliant?
    Yes, the BC856A-E6327 is lead-free and RoHS compliant.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BC856A-E6327 BC856AE6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

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