BC857CB5003XT
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Infineon Technologies BC857CB5003XT

Manufacturer No:
BC857CB5003XT
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857CB5003XT is a PNP silicon AF (Audio Frequency) transistor produced by Infineon Technologies. This transistor is part of the BC857 series, known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics. It is packaged in a surface-mount SOT23 package, making it suitable for a variety of applications requiring compact design.

Key Specifications

Parameter Conditions Typical/Maximum Value Unit
Transistor Type - PNP -
Collector-Base Voltage (VCBO) Open Emitter -50 V
Collector-Emitter Voltage (VCEO) Open Base -45 V
Emitter-Base Voltage (VEBO) Open Collector -5 V
Collector Current (IC) DC -100 mA
Peak Collector Current (ICM) - -200 mA
Peak Base Current (IBM) - -200 mA
Total Power Dissipation (Ptot) Tamb ≤ 25 °C 250 mW
Junction Temperature (Tj) - -150 °C
Operating Ambient Temperature (Tamb) - -65 to +150 °C
Transition Frequency (fT) VCE = -5 V, IC = -10 mA, f = 100 MHz 100 MHz
DC Current Gain (hFE) IC = -2 mA, VCE = -5 V 420 - 800 -
Collector-Emitter Saturation Voltage (VCEsat) IC = -10 mA, IB = -0.5 mA -75 to -300 mV

Key Features

  • High current gain (hFE) ranging from 420 to 800.
  • Low collector-emitter saturation voltage (VCEsat) of -75 to -300 mV.
  • Low noise between 30 Hz and 15 kHz.
  • Pb-free (RoHS compliant) package.
  • Qualified according to AEC Q101.
  • Surface-mount SOT23 package for compact design.

Applications

  • AF (Audio Frequency) input stages and driver applications.
  • General-purpose transistor applications requiring high current gain and low noise.

Q & A

  1. What is the transistor type of the BC857CB5003XT?

    The BC857CB5003XT is a PNP silicon AF transistor.

  2. What is the maximum collector current (IC) for the BC857CB5003XT?

    The maximum collector current (IC) is -100 mA.

  3. What is the typical DC current gain (hFE) of the BC857CB5003XT?

    The typical DC current gain (hFE) ranges from 420 to 800.

  4. What is the collector-emitter saturation voltage (VCEsat) for the BC857CB5003XT?

    The collector-emitter saturation voltage (VCEsat) is -75 to -300 mV.

  5. What is the operating ambient temperature range for the BC857CB5003XT?

    The operating ambient temperature range is -65 to +150 °C).

  6. Is the BC857CB5003XT RoHS compliant?
  7. What package type does the BC857CB5003XT use?

    The BC857CB5003XT uses a surface-mount SOT23 package).

  8. What are some potential applications for the BC857CB5003XT?

    Potential applications include AF input stages and driver applications).

  9. What is the transition frequency (fT) of the BC857CB5003XT?

    The transition frequency (fT) is 100 MHz).

  10. Is the BC857CB5003XT qualified according to any automotive standards?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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