BC 856B E6433
  • Share:

Infineon Technologies BC 856B E6433

Manufacturer No:
BC 856B E6433
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 65V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC 856B E6433 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This transistor is of the PNP type and is designed for surface mount applications, specifically in the SOT-23 package. It is characterized by its high-frequency capabilities and moderate power handling, making it suitable for a variety of electronic circuits.

Key Specifications

Parameter Value Parameter Value
Transistor Type PNP Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
Power - Max 330 mW Frequency - Transition 250MHz
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Package/Case SOT-23 RoHS Status RoHS Compliant

Key Features

  • High Frequency Capability: The BC 856B E6433 has a transition frequency of 250 MHz, making it suitable for high-frequency applications.
  • Moderate Power Handling: With a maximum power dissipation of 330 mW, this transistor can handle moderate power requirements.
  • Surface Mount Package: The SOT-23 package is compact and ideal for surface mount technology (SMT) assembly.
  • RoHS Compliant: This transistor is lead-free and RoHS compliant, ensuring environmental sustainability.
  • High DC Current Gain: The transistor has a minimum DC current gain (hFE) of 220 at 2 mA and 5 V, indicating good amplification capabilities.

Applications

  • Amplifier Circuits: The BC 856B E6433 can be used in various amplifier configurations due to its high DC current gain and moderate power handling.
  • Switching Circuits: Its high transition frequency makes it suitable for switching applications where high speed is required.
  • RF and Microwave Circuits: The transistor's high-frequency capabilities make it a good choice for RF and microwave circuit designs.
  • Automotive and Industrial Electronics: It can be used in automotive and industrial electronics where reliability and moderate power handling are necessary.

Q & A

  1. What is the transistor type of the BC 856B E6433?

    The BC 856B E6433 is a PNP bipolar junction transistor (BJT).

  2. What is the maximum collector current of the BC 856B E6433?

    The maximum collector current is 100 mA.

  3. What is the maximum collector-emitter breakdown voltage of the BC 856B E6433?

    The maximum collector-emitter breakdown voltage is 65 V.

  4. What is the transition frequency of the BC 856B E6433?

    The transition frequency is 250 MHz.

  5. What is the maximum power dissipation of the BC 856B E6433?

    The maximum power dissipation is 330 mW.

  6. What is the package type of the BC 856B E6433?

    The package type is SOT-23.

  7. Is the BC 856B E6433 RoHS compliant?

    Yes, the BC 856B E6433 is RoHS compliant.

  8. What is the operating temperature range of the BC 856B E6433?

    The operating temperature range is up to 150°C (TJ).

  9. What are some common applications of the BC 856B E6433?

    Common applications include amplifier circuits, switching circuits, RF and microwave circuits, and automotive and industrial electronics.

  10. Is the BC 856B E6433 still in production?

    No, the BC 856B E6433 is listed as obsolete.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

-
452

Please send RFQ , we will respond immediately.

Same Series
BC857CE6327HTSA1
BC857CE6327HTSA1
TRANS PNP 45V 0.1A SOT23
BC858CE6327HTSA1
BC858CE6327HTSA1
TRANS PNP 30V 0.1A SOT-23
BC860BWH6327XTSA1
BC860BWH6327XTSA1
TRANS PNP 45V 0.1A SOT323
BC857BL3E6327XTMA1
BC857BL3E6327XTMA1
TRANS PNP 45V 0.1A TSLP-3-1
BC856BWE6327BTSA1
BC856BWE6327BTSA1
TRANS PNP 65V 0.1A SOT323
BC 857BT E6327
BC 857BT E6327
TRANS PNP 45V 0.1A SC75
BC857CWE6433HTMA1
BC857CWE6433HTMA1
TRANS PNP 45V 0.1A SOT323
BC858CWE6327BTSA1
BC858CWE6327BTSA1
TRANS PNP 30V 0.1A SOT323
BC 860BF E6327
BC 860BF E6327
TRANS PNP 45V 0.1A TSFP-3
BC 856B E6327
BC 856B E6327
TRANS PNP 65V 0.1A SOT23
BC857BWH6778XTSA1
BC857BWH6778XTSA1
TRANS PNP 45V 0.1A SOT323
BC857CWH6433XTMA1
BC857CWH6433XTMA1
TRANS PNP 45V 0.1A SOT323

Similar Products

Part Number BC 856B E6433 BC 856BW E6433 BC 846B E6433
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
Transistor Type PNP PNP NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 330 mW 250 mW 330 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT323 PG-SOT23

Related Product By Categories

SMMBTA92LT1G
SMMBTA92LT1G
onsemi
TRANS PNP 300V 0.5A SOT23-3
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
PBSS5350X,146
PBSS5350X,146
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
BDX34C
BDX34C
STMicroelectronics
TRANS PNP DARL 100V 10A TO220
BC807-40/6215
BC807-40/6215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC846B/DG/B4215
BC846B/DG/B4215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847CW_R1_00001
BC847CW_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.1A SOT323
BC858B-7-F
BC858B-7-F
Diodes Incorporated
TRANS PNP 30V 0.1A SOT23-3
2N2907AE4
2N2907AE4
Microchip Technology
TRANS PNP 60V 0.6A TO18
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
KSA1220AYS
KSA1220AYS
onsemi
TRANS PNP 160V 1.2A TO126
BC817-25-QR
BC817-25-QR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB

Related Product By Brand

BAS70-04B5000
BAS70-04B5000
Infineon Technologies
SCHOTTKY DIODE
BAS7006B5003
BAS7006B5003
Infineon Technologies
SCHOTTKY DIODE
BAS4005E6327HTSA1
BAS4005E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAV99E6327
BAV99E6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BC847BWE6327BTSA1
BC847BWE6327BTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT-323
BC 807-25 B5003
BC 807-25 B5003
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
IRFR120NTRPBF
IRFR120NTRPBF
Infineon Technologies
MOSFET N-CH 100V 9.4A DPAK
IRF100B201
IRF100B201
Infineon Technologies
MOSFET N-CH 100V 192A TO220AB
IPB072N15N3GE8187ATMA1
IPB072N15N3GE8187ATMA1
Infineon Technologies
MOSFET N-CH 150V 100A TO263-3
BSP78E6327
BSP78E6327
Infineon Technologies
POWER SWITCH SMART LOW
IR3898MTRPBF
IR3898MTRPBF
Infineon Technologies
IC REG BUCK ADJUSTABLE 6A 16PQFN
S29GL128P90TFIR10
S29GL128P90TFIR10
Infineon Technologies
IC FLASH 128MBIT PARALLEL 56TSOP