BC857CWH6327XTSA1
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Infineon Technologies BC857CWH6327XTSA1

Manufacturer No:
BC857CWH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857CWH6327XTSA1 is a PNP general-purpose transistor produced by Infineon Technologies. It belongs to the BC857 series, which is known for its high current gain, low collector-emitter saturation voltage, and low noise characteristics. This transistor is packaged in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for a wide range of applications where space is limited.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) -50 V
Collector-Emitter Voltage (VCEO) -45 V
Emitter-Base Voltage (VEBO) -5 V
Collector Current (IC) -100 mA
Peak Collector Current (ICM) -200 mA
DC Current Gain (hFE) 420 - 800
Collector-Emitter Saturation Voltage (VCEsat) -250 to -650 mV
Base-Emitter Saturation Voltage (VBEsat) -700 to -850 mV
Total Power Dissipation (Ptot) 250 mW
Junction Temperature (Tj) 150 °C
Ambient Temperature (Tamb) -65 to 150 °C
Storage Temperature (Tstg) -65 to 150 °C

Key Features

  • High Current Gain: The BC857C offers a high DC current gain (hFE) ranging from 420 to 800, making it suitable for amplification and switching applications.
  • Low Collector-Emitter Saturation Voltage: It features a low VCEsat, which is beneficial for reducing power consumption and heat generation.
  • Low Noise: The transistor has low noise characteristics between 30 Hz and 15 kHz, making it ideal for audio frequency (AF) applications.
  • Complementary Types: The BC857C has complementary NPN types (BC847-BC850), allowing for balanced circuit designs.
  • Pb-free (RoHS Compliant) Package: The SOT23 package is lead-free and compliant with RoHS regulations, ensuring environmental sustainability.
  • AEC Q101 Qualified: The transistor is qualified according to the AEC Q101 standard, which is crucial for automotive and other demanding applications.

Applications

  • AF Input Stages and Driver Applications: The BC857C is well-suited for audio frequency input stages and driver applications due to its low noise and high current gain.
  • General-Purpose Switching and Amplification: It can be used in various general-purpose switching and amplification circuits where reliability and performance are critical.
  • Automotive and Industrial Applications: Given its AEC Q101 qualification, the BC857C is suitable for use in automotive and industrial environments where robustness and reliability are essential.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BC857C transistor?

    The collector-emitter voltage (VCEO) of the BC857C transistor is -45 V.

  2. What is the maximum collector current (IC) of the BC857C?

    The maximum collector current (IC) of the BC857C is -100 mA.

  3. What is the DC current gain (hFE) range of the BC857C?

    The DC current gain (hFE) of the BC857C ranges from 420 to 800.

  4. What package type is used for the BC857C transistor?

    The BC857C transistor is packaged in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.

  5. Is the BC857C transistor RoHS compliant?

    Yes, the BC857C transistor is Pb-free and RoHS compliant.

  6. What are the typical applications of the BC857C transistor?

    The BC857C transistor is typically used in AF input stages, driver applications, and general-purpose switching and amplification circuits.

  7. What is the maximum junction temperature (Tj) for the BC857C transistor?

    The maximum junction temperature (Tj) for the BC857C transistor is 150 °C.

  8. Does the BC857C transistor have a complementary NPN type?

    Yes, the BC857C has complementary NPN types (BC847-BC850).

  9. Is the BC857C transistor qualified for automotive applications?

    Yes, the BC857C transistor is qualified according to the AEC Q101 standard, making it suitable for automotive and other demanding applications.

  10. What is the total power dissipation (Ptot) of the BC857C transistor?

    The total power dissipation (Ptot) of the BC857C transistor is 250 mW.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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Similar Products

Part Number BC857CWH6327XTSA1 BC858CWH6327XTSA1 BC857BWH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 30 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 250 mW 250 mW 250 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323 PG-SOT323 PG-SOT323

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