BC807-25WE6327
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Infineon Technologies BC807-25WE6327

Manufacturer No:
BC807-25WE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-25WE6327 is a PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for general-purpose amplification and switching applications. It features a high collector current, high current gain, and low collector-emitter saturation voltage, making it suitable for a wide range of electronic circuits. The transistor is packaged in a SOT-323 (SC-70) surface mount package, which is lead-free and RoHS compliant.

Key Specifications

Parameter Value Unit
Transistor Type PNP -
Voltage - Collector Emitter Breakdown (Max) 45 V
Current - Collector (Ic) (Max) 500 mA
Power - Max 250 mW
Frequency - Transition 200 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V -
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA -
Operating Temperature -55 to +150 °C
Package / Case SOT-323 (SC-70) -
Mounting Type Surface Mount -
Lead Free Status / RoHS Status Lead free / RoHS Compliant -

Key Features

  • High collector current of up to 500 mA
  • High current gain (hFE) with a minimum value of 160 at 100 mA and 1 V
  • Low collector-emitter saturation voltage (Vce(sat)) of up to 700 mV
  • Transition frequency of 200 MHz, suitable for high-frequency applications
  • Pb-free (RoHS compliant) SOT-323 package
  • Operating temperature range from -55°C to +150°C
  • Complementary types available (BC817.../W, BC818.../W for NPN)

Applications

  • General-purpose amplification and switching circuits
  • Audio amplifiers and other low-power audio applications
  • Automotive and industrial control systems
  • Consumer electronics such as home appliances and audio equipment
  • Low-power DC-DC converters and power management circuits

Q & A

  1. What is the maximum collector current of the BC807-25WE6327?

    The maximum collector current is 500 mA.

  2. What is the collector-emitter breakdown voltage of the BC807-25WE6327?

    The collector-emitter breakdown voltage is up to 45 V.

  3. What is the transition frequency of the BC807-25WE6327?

    The transition frequency is 200 MHz.

  4. What is the package type of the BC807-25WE6327?

    The package type is SOT-323 (SC-70).

  5. Is the BC807-25WE6327 RoHS compliant?
  6. What is the operating temperature range of the BC807-25WE6327?
  7. What are the complementary types of the BC807-25WE6327?
  8. What is the maximum power dissipation of the BC807-25WE6327?
  9. What is the DC current gain (hFE) of the BC807-25WE6327?
  10. What is the collector-emitter saturation voltage (Vce(sat)) of the BC807-25WE6327?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:250 mW
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23-3-11
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Similar Products

Part Number BC807-25WE6327 BC807-25E6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 250 mW 330 mW
Frequency - Transition 200MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23-3-11 PG-SOT23-3-11

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