BC807-25E6327
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Infineon Technologies BC807-25E6327

Manufacturer No:
BC807-25E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-25E6327 is a small signal bipolar transistor produced by Infineon Technologies. It is a PNP silicon transistor designed for general-purpose applications. This component is part of the BC807 series, known for its reliability and versatility in various electronic circuits. Although the BC807-25E6327 is currently discontinued, it remains a significant component in many existing designs and legacy systems.

Key Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)45V
Collector-Base Voltage (VCBO)50V
Emitter-Base Voltage (VEBO)5.0V
Collector Current (IC)0.5A
Junction and Storage Temperature-55 to +150°C
DC Current Gain (hFE) at IC = 100 mA, VCE = 1 V160 - 400
Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 500 mA, IB = 50 mA0.7V
Base-Emitter On Voltage (VBE(on)) at IC = 500 mA, VCE = 1 V1.2V
Current-Gain Bandwidth Product (fT) at IC = 10 mA, VCE = 5 Vdc, f = 100 MHz100MHz
PackageSOT-23-3-11

Key Features

  • PNP Silicon Transistor: Designed for general-purpose applications, offering reliable performance in various circuits.
  • High Collector-Emitter Voltage: Rated at 45V, making it suitable for a wide range of applications.
  • Low Collector-Emitter Saturation Voltage: Ensures efficient operation with minimal voltage drop.
  • High DC Current Gain: With a hFE range of 160 to 400, it provides good amplification characteristics.
  • Rohs Compliant and Pb-Free: Environmentally friendly and compliant with regulatory standards.
  • Compact SOT-23-3-11 Package: Ideal for space-constrained designs and surface mount technology.

Applications

The BC807-25E6327 is suitable for a variety of applications, including:

  • General Purpose Amplification: Used in audio amplifiers, signal processing circuits, and other general-purpose amplification needs.
  • Switching Circuits: Its low saturation voltage and high current gain make it suitable for switching applications.
  • Automotive Electronics: Although discontinued, it may still be found in legacy automotive systems due to its robust performance.
  • Consumer Electronics: Used in various consumer electronic devices requiring reliable and efficient transistor performance.

Q & A

  1. What is the collector-emitter voltage rating of the BC807-25E6327?
    The collector-emitter voltage rating is 45V.
  2. What is the maximum collector current for the BC807-25E6327?
    The maximum collector current is 0.5 A.
  3. What is the package type of the BC807-25E6327?
    The package type is SOT-23-3-11.
  4. Is the BC807-25E6327 RoHS compliant?
  5. What is the DC current gain (hFE) of the BC807-25E6327?
    The DC current gain (hFE) ranges from 160 to 400 at IC = 100 mA and VCE = 1 V.
  6. What is the collector-emitter saturation voltage (VCE(sat)) of the BC807-25E6327?
    The collector-emitter saturation voltage is approximately 0.7 V at IC = 500 mA and IB = 50 mA.
  7. What is the base-emitter on voltage (VBE(on)) of the BC807-25E6327?
    The base-emitter on voltage is approximately 1.2 V at IC = 500 mA and VCE = 1 V.
  8. What is the current-gain bandwidth product (fT) of the BC807-25E6327?
    The current-gain bandwidth product is 100 MHz at IC = 10 mA, VCE = 5 Vdc, and f = 100 MHz.
  9. Is the BC807-25E6327 still in production?
    No, the BC807-25E6327 is currently discontinued.
  10. Where can I find the datasheet for the BC807-25E6327?
    You can find the datasheet on various electronic component distributor websites such as JLCPCB, Findchips, or directly from Infineon Technologies' official resources.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:330 mW
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23-3-11
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Similar Products

Part Number BC807-25E6327 BC807-25WE6327 BC80725E6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 330 mW 250 mW 330 mW
Frequency - Transition 200MHz 200MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23-3-11 PG-SOT23-3-11 PG-SOT23-3-11

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