BC807-25E6327
  • Share:

Infineon Technologies BC807-25E6327

Manufacturer No:
BC807-25E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-25E6327 is a small signal bipolar transistor produced by Infineon Technologies. It is a PNP silicon transistor designed for general-purpose applications. This component is part of the BC807 series, known for its reliability and versatility in various electronic circuits. Although the BC807-25E6327 is currently discontinued, it remains a significant component in many existing designs and legacy systems.

Key Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)45V
Collector-Base Voltage (VCBO)50V
Emitter-Base Voltage (VEBO)5.0V
Collector Current (IC)0.5A
Junction and Storage Temperature-55 to +150°C
DC Current Gain (hFE) at IC = 100 mA, VCE = 1 V160 - 400
Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 500 mA, IB = 50 mA0.7V
Base-Emitter On Voltage (VBE(on)) at IC = 500 mA, VCE = 1 V1.2V
Current-Gain Bandwidth Product (fT) at IC = 10 mA, VCE = 5 Vdc, f = 100 MHz100MHz
PackageSOT-23-3-11

Key Features

  • PNP Silicon Transistor: Designed for general-purpose applications, offering reliable performance in various circuits.
  • High Collector-Emitter Voltage: Rated at 45V, making it suitable for a wide range of applications.
  • Low Collector-Emitter Saturation Voltage: Ensures efficient operation with minimal voltage drop.
  • High DC Current Gain: With a hFE range of 160 to 400, it provides good amplification characteristics.
  • Rohs Compliant and Pb-Free: Environmentally friendly and compliant with regulatory standards.
  • Compact SOT-23-3-11 Package: Ideal for space-constrained designs and surface mount technology.

Applications

The BC807-25E6327 is suitable for a variety of applications, including:

  • General Purpose Amplification: Used in audio amplifiers, signal processing circuits, and other general-purpose amplification needs.
  • Switching Circuits: Its low saturation voltage and high current gain make it suitable for switching applications.
  • Automotive Electronics: Although discontinued, it may still be found in legacy automotive systems due to its robust performance.
  • Consumer Electronics: Used in various consumer electronic devices requiring reliable and efficient transistor performance.

Q & A

  1. What is the collector-emitter voltage rating of the BC807-25E6327?
    The collector-emitter voltage rating is 45V.
  2. What is the maximum collector current for the BC807-25E6327?
    The maximum collector current is 0.5 A.
  3. What is the package type of the BC807-25E6327?
    The package type is SOT-23-3-11.
  4. Is the BC807-25E6327 RoHS compliant?
  5. What is the DC current gain (hFE) of the BC807-25E6327?
    The DC current gain (hFE) ranges from 160 to 400 at IC = 100 mA and VCE = 1 V.
  6. What is the collector-emitter saturation voltage (VCE(sat)) of the BC807-25E6327?
    The collector-emitter saturation voltage is approximately 0.7 V at IC = 500 mA and IB = 50 mA.
  7. What is the base-emitter on voltage (VBE(on)) of the BC807-25E6327?
    The base-emitter on voltage is approximately 1.2 V at IC = 500 mA and VCE = 1 V.
  8. What is the current-gain bandwidth product (fT) of the BC807-25E6327?
    The current-gain bandwidth product is 100 MHz at IC = 10 mA, VCE = 5 Vdc, and f = 100 MHz.
  9. Is the BC807-25E6327 still in production?
    No, the BC807-25E6327 is currently discontinued.
  10. Where can I find the datasheet for the BC807-25E6327?
    You can find the datasheet on various electronic component distributor websites such as JLCPCB, Findchips, or directly from Infineon Technologies' official resources.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:330 mW
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23-3-11
0 Remaining View Similar

In Stock

$0.03
23,673

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD44S32S0T2X
DD44S32S0T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC807-25E6327 BC807-25WE6327 BC80725E6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 330 mW 250 mW 330 mW
Frequency - Transition 200MHz 200MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23-3-11 PG-SOT23-3-11 PG-SOT23-3-11

Related Product By Categories

BDW93CTU
BDW93CTU
onsemi
TRANS NPN DARL 100V 12A TO220-3
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
BULD742CT4
BULD742CT4
STMicroelectronics
TRANS NPN 400V 4A DPAK
BC817K-40WE6327
BC817K-40WE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC846AW_R1_00001
BC846AW_R1_00001
Panjit International Inc.
TRANS NPN 65V 0.1A SOT323
BCX52-16TF
BCX52-16TF
Nexperia USA Inc.
TRANS PNP 60V 1A SOT89
BC857C TR PBFREE
BC857C TR PBFREE
Central Semiconductor Corp
TRANS PNP 45V 0.1A SOT23
BCP53-10TX
BCP53-10TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
TIP122FP
TIP122FP
STMicroelectronics
TRANS NPN DARL 100V 5A TO220FP
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP
BC857AQBAZ
BC857AQBAZ
Nexperia USA Inc.
BC857AQB/SOT8015/DFN1110D-3

Related Product By Brand

BAW56SE6327BTSA1
BAW56SE6327BTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BC857SH6827XTSA1
BC857SH6827XTSA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BC847CE6327HTSA1
BC847CE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC817K25E6327HTSA1
BC817K25E6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BC817K16E6433HTMA1
BC817K16E6433HTMA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
BC817K40WH6327XTSA1
BC817K40WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BCP 53-16 E6327
BCP 53-16 E6327
Infineon Technologies
TRANS PNP 80V 1A SOT143R-3D
IRF7342TRPBF
IRF7342TRPBF
Infineon Technologies
MOSFET 2P-CH 55V 3.4A 8-SOIC
IPG20N04S4L08AATMA1
IPG20N04S4L08AATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
ICE2PCS02GXUMA1
ICE2PCS02GXUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO
BTS50202EKAXUMA2
BTS50202EKAXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-14