Overview
The BC807-25E6327 is a general-purpose PNP bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for a wide range of applications requiring high current gain and low saturation voltage. It is particularly suited for use in surface mount designs due to its compact package options.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | - |
| Collector-Emitter Breakdown Voltage (VCEO) | -45 | V |
| Collector-Base Breakdown Voltage (VCES) | -50 | V |
| Emitter-Base Breakdown Voltage (VEBO) | -5.0 | V |
| Collector Current (IC) | 500 | mA |
| DC Current Gain (hFE) at IC = 100 mA, VCE = 1 V | 160 - 400 | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IB = 50 mA, IC = 500 mA | 0.7 | V |
| Base-Emitter On Voltage (VBE(on)) at IC = 500 mA, VCE = 1 V | 1.2 | V |
| Transition Frequency (fT) | 200 | MHz |
| Maximum Power Dissipation (Ptot) | 330 | mW |
| Junction Temperature (TJ) | -55 to +150 | °C |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | - |
| Lead Free Status / RoHS Status | Lead Free / RoHS Compliant | - |
Key Features
- High Current Gain: The BC807-25E6327 offers a high DC current gain (hFE) ranging from 160 to 400, making it suitable for amplification and switching applications.
- Low Saturation Voltage: With a collector-emitter saturation voltage (VCE(sat)) of 0.7 V, this transistor minimizes power losses in saturation mode.
- High Transition Frequency: A transition frequency (fT) of 200 MHz allows for high-frequency operation.
- Compact Packaging: Available in TO-236-3, SC-59, and SOT-23-3 packages, making it ideal for surface mount designs.
- Lead Free and RoHS Compliant: Ensures compliance with environmental regulations.
Applications
- Amplifiers: Suitable for use in audio and general-purpose amplifiers due to its high current gain and low noise characteristics.
- Switching Circuits: Can be used in switching applications such as power supplies, motor control, and relay drivers.
- Automotive Electronics: Applicable in various automotive systems requiring robust and reliable transistor performance.
- Consumer Electronics: Used in a variety of consumer electronic devices such as televisions, radios, and other household appliances.
- Industrial Control Systems: Suitable for use in industrial control circuits, including sensors and actuators.
Q & A
- What is the transistor type of the BC807-25E6327?
The BC807-25E6327 is a PNP bipolar junction transistor (BJT).
- What is the maximum collector current of the BC807-25E6327?
The maximum collector current (IC) is 500 mA.
- What is the typical DC current gain (hFE) of the BC807-25E6327?
The DC current gain (hFE) ranges from 160 to 400 at IC = 100 mA and VCE = 1 V.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BC807-25E6327?
The collector-emitter saturation voltage (VCE(sat)) is 0.7 V at IB = 50 mA and IC = 500 mA.
- What is the transition frequency (fT) of the BC807-25E6327?
The transition frequency (fT) is 200 MHz.
- What are the package options for the BC807-25E6327?
The BC807-25E6327 is available in TO-236-3, SC-59, and SOT-23-3 packages.
- Is the BC807-25E6327 lead-free and RoHS compliant?
Yes, the BC807-25E6327 is lead-free and RoHS compliant.
- What is the maximum junction temperature of the BC807-25E6327?
The maximum junction temperature (TJ) is 150°C.
- What are some common applications of the BC807-25E6327?
Common applications include amplifiers, switching circuits, automotive electronics, consumer electronics, and industrial control systems.
- What is the maximum power dissipation of the BC807-25E6327?
The maximum power dissipation (Ptot) is 330 mW).
