BC847SH6730XTMA1
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Infineon Technologies BC847SH6730XTMA1

Manufacturer No:
BC847SH6730XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANSISTOR NPN DUAL SOT363
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The BC847SH6730XTMA1 is an NPN Silicon AF (Audio Frequency) Transistor Array produced by Infineon Technologies. This component is part of the BC847S series, which is known for its high current gain and low collector-emitter saturation voltage. The transistor array features two internally isolated transistors in a single package, making it suitable for various audio and driver applications. However, it is important to note that the BC847SH6730XTMA1 is currently obsolete and no longer manufactured.

Key Specifications

Parameter Value Unit
Transistor Type NPN -
Package SOT363 -
Current Gain (h_FE) 100-630 -
Collector-Emitter Saturation Voltage (V_CE(sat)) 0.1-0.3 V
Collector Current (I_C) 100 mA
Base-Emitter Voltage (V_BE) 0.6-0.7 V
Operating Temperature Range -55 to 150 °C
Lead-Free and RoHS Compliant Yes -
AEC-Q101 Qualified Yes -

Key Features

The BC847SH6730XTMA1 boasts several key features:

  • High Current Gain: The transistor array has a high current gain, making it suitable for amplification applications.
  • Low Collector-Emitter Saturation Voltage: This feature reduces power consumption and improves efficiency.
  • Internally Isolated Transistors: The two transistors within the package are galvanically isolated, ensuring good matching and reliability.
  • Lead-Free and RoHS Compliant: The package is completely lead-free and compliant with RoHS standards.
  • AEC-Q101 Qualified: This qualification ensures the component meets automotive industry standards for reliability and performance.

Applications

The BC847SH6730XTMA1 is designed for various applications, including:

  • AF Input Stages: Suitable for audio frequency input stages due to its high current gain and low noise characteristics.
  • Driver Applications: Can be used in driver circuits where high current gain and low saturation voltage are required.

Q & A

  1. What is the transistor type of the BC847SH6730XTMA1?

    The BC847SH6730XTMA1 is an NPN Silicon AF Transistor Array.

  2. What is the package type of the BC847SH6730XTMA1?

    The package type is SOT363.

  3. What is the current gain range of the BC847SH6730XTMA1?

    The current gain (h_FE) ranges from 100 to 630.

  4. What is the collector-emitter saturation voltage of the BC847SH6730XTMA1?

    The collector-emitter saturation voltage (V_CE(sat)) is between 0.1 and 0.3 volts.

  5. Is the BC847SH6730XTMA1 lead-free and RoHS compliant?

    Yes, the component is completely lead-free and RoHS compliant.

  6. What are the primary applications of the BC847SH6730XTMA1?

    The primary applications include AF input stages and driver applications.

  7. Is the BC847SH6730XTMA1 AEC-Q101 qualified?

    Yes, it is qualified according to AEC-Q101 standards.

  8. What is the operating temperature range of the BC847SH6730XTMA1?

    The operating temperature range is from -55°C to 150°C.

  9. Is the BC847SH6730XTMA1 still in production?

    No, the BC847SH6730XTMA1 is obsolete and no longer manufactured.

  10. What are the available substitutes for the BC847SH6730XTMA1?

    Available substitutes include the BC847SH6327XTSA1.

Product Attributes

Transistor Type:2 NPN (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VSSOP, SC-88, SOT-363
Supplier Device Package:PG-SOT363-6
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