Overview
The BC857BDW1T1G is a Dual PNP Bipolar Transistor designed for general purpose amplifier applications. It is manufactured by onsemi and housed in the SOT-363/SC-88 package, which is suitable for low power surface mount applications. This transistor is part of onsemi's general purpose and low VCE(sat) transistor series, making it versatile for various electronic circuits. The device is available in Pb-Free packages and is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(CBO) | - | - | -50 | V |
| Collector-Emitter Breakdown Voltage | V(CEO) | - | - | -45 | V |
| Emitter-Base Breakdown Voltage | V(EBO) | - | - | -5.0 | V |
| Collector Current - Continuous | I(C) | - | - | 100 | mA |
| Collector Current - Peak | I(C) | - | - | 200 | mA |
| Collector-Emitter Saturation Voltage | V(CE(sat)) | - | - | 0.3 | V |
| Base-Emitter Saturation Voltage | V(BE(sat)) | - | - | 0.7 | V |
| Base-Emitter On Voltage | V(BE(on)) | -0.6 | - | -0.75 | V |
| Current Gain (hFE) | hFE | 220 | - | 475 | - |
| Current-Gain Bandwidth Product | fT | - | - | 100 | MHz |
| Total Device Dissipation | PD | - | - | 380 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | 328 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Dual PNP Bipolar Transistor in SOT-363/SC-88 package, suitable for low power surface mount applications.
- Pb-Free packages available, making it environmentally friendly and compliant with current regulations.
- AEC-Q101 qualified, ensuring reliability and performance in automotive and other demanding applications.
- Low VCE(sat) characteristics, making it efficient for amplifier and switching applications.
- High current gain (hFE) range of 220 to 475, providing reliable and consistent performance.
- Wide operating temperature range from -55°C to 150°C, suitable for various environmental conditions.
Applications
The BC857BDW1T1G is designed for general purpose amplifier applications and can be used in a variety of electronic circuits. Some common applications include:
- Audio amplifiers and audio equipment.
- Switching circuits and logic gates.
- Automotive electronics due to its AEC-Q101 qualification.
- Consumer electronics such as TVs, radios, and other household appliances.
- Industrial control systems and automation.
Q & A
- What is the package type of the BC857BDW1T1G transistor? The BC857BDW1T1G is housed in the SOT-363/SC-88 package.
- What is the maximum collector current for the BC857BDW1T1G? The maximum continuous collector current is 100 mA, and the peak collector current is 200 mA.
- What is the typical collector-emitter saturation voltage (VCE(sat)) for this transistor? The typical VCE(sat) is 0.3 V.
- Is the BC857BDW1T1G Pb-Free? Yes, Pb-Free packages are available for this transistor.
- What is the operating temperature range for the BC857BDW1T1G? The junction and storage temperature range is from -55°C to 150°C.
- What is the current gain (hFE) range for this transistor? The current gain (hFE) range is from 220 to 475.
- Is the BC857BDW1T1G suitable for automotive applications? Yes, it is AEC-Q101 qualified, making it suitable for automotive and other demanding applications.
- What is the thermal resistance, junction-to-ambient (RJA) for this transistor? The thermal resistance, junction-to-ambient (RJA) is 328 °C/W.
- What is the maximum total device dissipation (PD) for the BC857BDW1T1G? The maximum total device dissipation (PD) is 380 mW.
- What are some common applications for the BC857BDW1T1G transistor? Common applications include audio amplifiers, switching circuits, automotive electronics, consumer electronics, and industrial control systems.
