Overview
The SBC856BDW1T3G is a dual general-purpose PNP transistor produced by onsemi. It is part of the BC856, BC857, and BC858 series, designed for low power surface mount applications. This transistor is housed in the SOT-363/SC-88 package, making it suitable for a variety of electronic circuits. The SBC856BDW1T3G is AEC-Q101 qualified and PPAP capable, ensuring its reliability and compliance with automotive and other stringent application requirements.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -65 | V |
| Collector-Base Voltage | VCBO | -80 | V |
| Emitter-Base Voltage | VEBO | -5.0 | V |
| Collector Current - Continuous | IC | 100 | mAdc |
| Collector Current - Peak | IC | 200 | mAdc |
| Total Device Dissipation Per Device (FR-5 Board, TA = 25°C) | PD | 380 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | 328 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = -10 mA, VCE = -5.0 V) | hFE | 220 - 420 | |
| Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VCE(sat) | -0.3 | V |
| Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VBE(sat) | -0.7 | V |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- Housed in the SOT-363/SC-88 package, designed for low power surface mount applications.
- High DC current gain (hFE) ranging from 220 to 420.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- High thermal resistance, junction-to-ambient (RJA) of 328°C/W.
Applications
The SBC856BDW1T3G is designed for general-purpose amplifier applications and is suitable for a wide range of electronic circuits. It can be used in:
- Automotive systems due to its AEC-Q101 qualification.
- Low power surface mount applications.
- General-purpose amplifiers.
- Switching circuits.
- Audio and video equipment.
Q & A
- What is the collector-emitter voltage (VCEO) of the SBC856BDW1T3G?
The collector-emitter voltage (VCEO) is -65 V.
- Is the SBC856BDW1T3G RoHS compliant?
- What is the DC current gain (hFE) of the SBC856BDW1T3G?
The DC current gain (hFE) ranges from 220 to 420.
- What is the thermal resistance, junction-to-ambient (RJA) of the SBC856BDW1T3G?
The thermal resistance, junction-to-ambient (RJA) is 328°C/W.
- What is the package type of the SBC856BDW1T3G?
The SBC856BDW1T3G is housed in the SOT-363/SC-88 package.
- What are the typical applications of the SBC856BDW1T3G?
The SBC856BDW1T3G is used in general-purpose amplifier applications, automotive systems, low power surface mount applications, switching circuits, and audio and video equipment.
- What is the collector current - continuous (IC) of the SBC856BDW1T3G?
The collector current - continuous (IC) is 100 mAdc.
- What is the collector-emitter saturation voltage (VCE(sat)) of the SBC856BDW1T3G?
The collector-emitter saturation voltage (VCE(sat)) is -0.3 V.
- What is the base-emitter saturation voltage (VBE(sat)) of the SBC856BDW1T3G?
The base-emitter saturation voltage (VBE(sat)) is -0.7 V.
- What is the junction and storage temperature range of the SBC856BDW1T3G?
The junction and storage temperature range is -55 to +150°C.
