Overview
The SBC856BDW1T1G is a dual general-purpose PNP transistor produced by onsemi. It is designed for low power surface mount applications and is housed in the SOT-363/SC-88 package. This transistor is suitable for various general-purpose amplifier applications and is AEC-Q101 qualified, making it appropriate for automotive and other applications requiring unique site and control change requirements. The device is Pb-free, halogen-free/BFR-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -65 | V |
| Collector-Base Voltage | VCBO | -80 | V |
| Emitter-Base Voltage | VEBO | -5.0 | V |
| Collector Current - Continuous | IC | -100 | mAdc |
| Collector Current - Peak | IC | -200 | mAdc |
| Total Device Dissipation Per Device (FR-5 Board, TA = 25°C) | PD | 380 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | 328 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = -10 mA, VCE = -5.0 V) | hFE | 220 - 420 | |
| Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) | VCE(sat) | -0.3 | V |
Key Features
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
- Pb-free, Halogen Free/BFR Free and RoHS Compliant.
- Designed for general purpose amplifier applications.
- Housed in the SOT-363/SC-88 package, suitable for low power surface mount applications.
- High DC current gain (hFE) ranging from 220 to 420.
- Low collector-emitter saturation voltage (VCE(sat)) of -0.3 V.
Applications
The SBC856BDW1T1G is versatile and can be used in a variety of applications, including:
- General-purpose amplifier circuits.
- Automotive electronics due to its AEC-Q101 qualification.
- Surface mount applications where low power consumption is required.
- Audio and signal processing circuits.
- Switching and logic circuits.
Q & A
- What is the collector-emitter voltage rating for the SBC856BDW1T1G?
The collector-emitter voltage rating for the SBC856BDW1T1G is -65 V. - What is the package type of the SBC856BDW1T1G?
The SBC856BDW1T1G is housed in the SOT-363/SC-88 package. - Is the SBC856BDW1T1G RoHS compliant?
Yes, the SBC856BDW1T1G is Pb-free, halogen-free/BFR-free, and RoHS compliant. - What is the DC current gain range for the SBC856BDW1T1G?
The DC current gain (hFE) for the SBC856BDW1T1G ranges from 220 to 420. - What are the typical applications for the SBC856BDW1T1G?
The SBC856BDW1T1G is typically used in general-purpose amplifier circuits, automotive electronics, and other surface mount applications. - What is the thermal resistance, junction-to-ambient for the SBC856BDW1T1G?
The thermal resistance, junction-to-ambient (RJA) for the SBC856BDW1T1G is 328 °C/W. - What is the collector-emitter saturation voltage for the SBC856BDW1T1G?
The collector-emitter saturation voltage (VCE(sat)) for the SBC856BDW1T1G is -0.3 V. - Is the SBC856BDW1T1G suitable for automotive applications?
Yes, the SBC856BDW1T1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications. - What is the maximum continuous collector current for the SBC856BDW1T1G?
The maximum continuous collector current for the SBC856BDW1T1G is -100 mA. - What is the junction and storage temperature range for the SBC856BDW1T1G?
The junction and storage temperature range for the SBC856BDW1T1G is -55 to +150 °C.
