BC847BPDXV6T1
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onsemi BC847BPDXV6T1

Manufacturer No:
BC847BPDXV6T1
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN/PNP 45V 0.1A SOT563
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC847BPDXV6T1 is a Dual NPN/PNP Bipolar Transistor designed for general purpose amplifier applications. It is manufactured by onsemi and housed in the SOT-563 package, which is optimized for low power surface mount applications. This transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free and RoHS compliant.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage (NPN) VCEO 45 V
Collector-Emitter Voltage (PNP) VCEO -45 V
Collector-Base Voltage (NPN) VCBO 50 V
Collector-Base Voltage (PNP) VCBO -50 V
Emitter-Base Voltage (NPN) VEBO 6.0 V
Emitter-Base Voltage (PNP) VEBO -5.0 V
Collector Current - Continuous (NPN/PNP) IC 100 mA mAdc
DC Current Gain (NPN, IC = 10 mA, VCE = 5.0 V) hFE 200 - 475 -
Collector-Emitter Saturation Voltage (NPN, IC = 10 mA, IB = 0.5 mA) VCE(sat) 0.25 V V
Base-Emitter Saturation Voltage (NPN, IC = 10 mA, IB = 0.5 mA) VBE(sat) 0.7 V V
Current-Gain Bandwidth Product (NPN, IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT 100 MHz MHz

Key Features

  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free and RoHS compliant, ensuring environmental compliance.
  • Housed in the SOT-563 package, designed for low power surface mount applications.
  • Complementary NPN and PNP transistors in a single package, enhancing versatility in circuit design.
  • Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)), reducing power losses in switching applications.
  • High current gain (hFE) for reliable amplifier performance.

Applications

  • General purpose amplifier applications.
  • Automotive electronics due to AEC-Q101 qualification and PPAP capability.
  • Low power surface mount applications where space is limited.
  • Switching circuits requiring low VCE(sat) and VBE(sat).
  • Audio and signal processing circuits where high current gain is necessary.

Q & A

  1. What is the BC847BPDXV6T1 used for?

    The BC847BPDXV6T1 is used for general purpose amplifier applications and is particularly suited for automotive and low power surface mount applications.

  2. What package type does the BC847BPDXV6T1 come in?

    The BC847BPDXV6T1 is housed in the SOT-563 package.

  3. Is the BC847BPDXV6T1 AEC-Q101 qualified?

    Yes, the BC847BPDXV6T1 is AEC-Q101 qualified and PPAP capable.

  4. What are the maximum collector-emitter voltages for NPN and PNP transistors?

    The maximum collector-emitter voltage for the NPN transistor is 45 V, and for the PNP transistor, it is -45 V.

  5. What is the typical current gain (hFE) of the BC847BPDXV6T1?

    The typical current gain (hFE) ranges from 200 to 475.

  6. Is the BC847BPDXV6T1 Pb-free and RoHS compliant?

    Yes, the BC847BPDXV6T1 is Pb-free and RoHS compliant.

  7. What is the maximum collector current for the BC847BPDXV6T1?

    The maximum continuous collector current is 100 mA.

  8. What is the collector-emitter saturation voltage (VCE(sat)) for the BC847BPDXV6T1?

    The collector-emitter saturation voltage (VCE(sat)) is typically 0.25 V.

  9. What is the current-gain bandwidth product (fT) of the BC847BPDXV6T1?

    The current-gain bandwidth product (fT) is 100 MHz.

  10. Where can I find more detailed specifications for the BC847BPDXV6T1?

    You can find detailed specifications in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.

Product Attributes

Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA, 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:500mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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Same Series
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Similar Products

Part Number BC847BPDXV6T1 BC847BPDXV6T1G
Manufacturer onsemi onsemi
Product Status Obsolete Active
Transistor Type NPN, PNP NPN, PNP
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 45V 45V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA, 650mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 500mW 357mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563

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