BCV62BE6433HTMA1
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Infineon Technologies BCV62BE6433HTMA1

Manufacturer No:
BCV62BE6433HTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP 30V 0.1A SOT143
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCV62BE6433HTMA1 is a bipolar junction transistor (BJT) array produced by Infineon Technologies. This component is designed as a dual PNP transistor array, making it suitable for a variety of applications that require multiple transistor functions in a single package. The device is housed in a surface mount PG-SOT-143-3D package, which is compact and efficient for modern electronic designs.

Key Specifications

ParameterValue
Transistor TypeDual PNP BJT
Collector-Emitter Voltage (Vce)30V
Collector Current (Ic)100mA
Transition Frequency (ft)250MHz
Power Dissipation (Pd)300mW
Package TypeSurface Mount PG-SOT-143-3D

Key Features

  • Dual PNP transistor configuration, providing two transistors in a single package for space and cost efficiency.
  • High transition frequency of 250MHz, suitable for high-frequency applications.
  • Compact surface mount PG-SOT-143-3D package, ideal for modern PCB designs.
  • Low power dissipation of 300mW, contributing to energy-efficient designs.

Applications

The BCV62BE6433HTMA1 is versatile and can be used in various electronic circuits, including:

  • Audio amplifiers and audio equipment due to its high frequency capabilities.
  • Switching and amplification circuits in consumer electronics.
  • Automotive electronics where compact and reliable transistor arrays are necessary.
  • Industrial control systems requiring dual transistor functions.

Q & A

  1. What is the BCV62BE6433HTMA1? The BCV62BE6433HTMA1 is a dual PNP bipolar junction transistor (BJT) array produced by Infineon Technologies.
  2. What is the collector-emitter voltage rating of the BCV62BE6433HTMA1? The collector-emitter voltage (Vce) rating is 30V.
  3. What is the maximum collector current of the BCV62BE6433HTMA1? The maximum collector current (Ic) is 100mA.
  4. What is the transition frequency of the BCV62BE6433HTMA1? The transition frequency (ft) is 250MHz.
  5. What is the power dissipation of the BCV62BE6433HTMA1? The power dissipation (Pd) is 300mW.
  6. In what package is the BCV62BE6433HTMA1 housed? The BCV62BE6433HTMA1 is housed in a surface mount PG-SOT-143-3D package.
  7. What are some common applications of the BCV62BE6433HTMA1? Common applications include audio amplifiers, consumer electronics, automotive electronics, and industrial control systems.
  8. Why is the BCV62BE6433HTMA1 useful in modern electronic designs? It is useful due to its compact package, high frequency capabilities, and dual transistor configuration, making it efficient in terms of space and cost.
  9. Where can I find detailed specifications for the BCV62BE6433HTMA1? Detailed specifications can be found in the datasheet available on Infineon’s official website or through distributors like Digi-Key.
  10. Is the BCV62BE6433HTMA1 suitable for high-frequency applications? Yes, with a transition frequency of 250MHz, it is suitable for high-frequency applications.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):30V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:300mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-253-4, TO-253AA
Supplier Device Package:PG-SOT-143-3D
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$0.13
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