SMBT3946DW1T1G
  • Share:

onsemi SMBT3946DW1T1G

Manufacturer No:
SMBT3946DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRAN NPN/PNP 40V 0.2A SC88/SC70
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMBT3946DW1T1G is a complementary general-purpose transistor device produced by onsemi. It is designed for low-power surface mount applications where board space is limited. This device combines two discrete transistors (one NPN and one PNP) in a single SOT-363-6 surface mount package, making it ideal for general-purpose amplifier applications.

Key Specifications

Rating Symbol Value Unit
Collector-Emitter Voltage (NPN/PNP) VCEO 40 / -40 Vdc
Collector-Base Voltage (NPN/PNP) VCBO 60 / -40 Vdc
Emitter-Base Voltage (NPN/PNP) VEBO 6.0 / -5.0 Vdc
Collector Current - Continuous (NPN/PNP) IC 200 / -200 mAdc
Electrostatic Discharge ESD HBM Class 2, MM Class B
Total Package Dissipation (TA = 25°C) PD 150 mW
Thermal Resistance, Junction-to-Ambient RJA 833 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C

Key Features

  • Current gain (hFE) of 100-300
  • Low VCE(sat) of ≤0.4 V
  • Simplifies circuit design by integrating two discrete devices in one package
  • Reduces board space and component count
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant

Applications

The SMBT3946DW1T1G is suitable for a variety of general-purpose amplifier applications, including low-power surface mount designs where space is limited. It is particularly useful in automotive and industrial electronics where reliability and compliance with stringent standards are crucial.

Q & A

  1. What is the SMBT3946DW1T1G device?

    The SMBT3946DW1T1G is a complementary general-purpose transistor device that combines one NPN and one PNP transistor in a single SOT-363-6 surface mount package.

  2. What are the key specifications of the SMBT3946DW1T1G?

    Key specifications include a collector-emitter voltage of 40 V / -40 V, collector-base voltage of 60 V / -40 V, and a collector current of 200 mA / -200 mA.

  3. What are the thermal characteristics of the SMBT3946DW1T1G?

    The device has a total package dissipation of 150 mW at 25°C and a thermal resistance of 833 °C/W.

  4. Is the SMBT3946DW1T1G RoHS compliant?
  5. What are the typical applications for the SMBT3946DW1T1G?
  6. What is the current gain (hFE) of the SMBT3946DW1T1G?

    The current gain (hFE) is between 100 and 300.

  7. What is the collector-emitter saturation voltage (VCE(sat)) of the SMBT3946DW1T1G?

    The VCE(sat) is ≤0.4 V.

  8. Is the SMBT3946DW1T1G AEC-Q101 qualified?
  9. What is the junction and storage temperature range for the SMBT3946DW1T1G?
  10. How does the SMBT3946DW1T1G simplify circuit design?

Product Attributes

Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):200mA
Voltage - Collector Emitter Breakdown (Max):40V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:150mW
Frequency - Transition:300MHz, 250MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
0 Remaining View Similar

In Stock

$0.39
1,334

Please send RFQ , we will respond immediately.

Same Series
SMBT3946DW1T1G
SMBT3946DW1T1G
TRAN NPN/PNP 40V 0.2A SC88/SC70
MBT3946DW1T1G
MBT3946DW1T1G
TRAN NPN/PNP 40V 0.2A SC88/SC70
MBT3946DW1T1
MBT3946DW1T1
TRANS DUAL GP 200MA 40V SOT363

Similar Products

Part Number SMBT3946DW1T1G SMBT3906DW1T1G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type NPN, PNP 2 PNP (Dual)
Current - Collector (Ic) (Max) 200mA 200mA
Voltage - Collector Emitter Breakdown (Max) 40V 40V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 150mW 150mW
Frequency - Transition 300MHz, 250MHz 250MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

Related Product By Categories

BC846S
BC846S
Diotec Semiconductor
BJT SOT-363 65V 100MA
SMBT3946DW1T1G
SMBT3946DW1T1G
onsemi
TRAN NPN/PNP 40V 0.2A SC88/SC70
NST847BPDP6T5G
NST847BPDP6T5G
onsemi
TRANS NPN/PNP 45V 0.1A SOT963
BCM856BS,115
BCM856BS,115
Nexperia USA Inc.
TRANS 2PNP 65V 0.1A 6TSSOP
BC856AQ-7-F
BC856AQ-7-F
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT23
BCM856BSH
BCM856BSH
Nexperia USA Inc.
TRANS 2PNP 65V 0.1A 6TSSOP
BC847BV-7
BC847BV-7
Diodes Incorporated
TRANS 2NPN 45V 0.1A SOT563
MC1413BPG
MC1413BPG
onsemi
TRANS 7NPN DARL 50V 0.5A 16DIP
BC857BDW1T1
BC857BDW1T1
onsemi
TRANS PNP DUAL 45V 100MA SOT-363
MAT01AHZ
MAT01AHZ
Analog Devices Inc.
TRANS 2NPN 45V 0.025A TO78-6
PMP5201Y/DG/B3X
PMP5201Y/DG/B3X
Nexperia USA Inc.
TRANS 2NPN MATCHED
BCM857BSH-QF
BCM857BSH-QF
Nexperia USA Inc.
BCM857BSH-QF

Related Product By Brand

SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
M74VHC1GT04DFT1G
M74VHC1GT04DFT1G
onsemi
IC INVERTER 1CH 1-INP SC88A
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT