Overview
The SMBT3946DW1T1G is a complementary general-purpose transistor device produced by onsemi. It is designed for low-power surface mount applications where board space is limited. This device combines two discrete transistors (one NPN and one PNP) in a single SOT-363-6 surface mount package, making it ideal for general-purpose amplifier applications.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage (NPN/PNP) | VCEO | 40 / -40 | Vdc |
| Collector-Base Voltage (NPN/PNP) | VCBO | 60 / -40 | Vdc |
| Emitter-Base Voltage (NPN/PNP) | VEBO | 6.0 / -5.0 | Vdc |
| Collector Current - Continuous (NPN/PNP) | IC | 200 / -200 | mAdc |
| Electrostatic Discharge | ESD | HBM Class 2, MM Class B | |
| Total Package Dissipation (TA = 25°C) | PD | 150 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | 833 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
Key Features
- Current gain (hFE) of 100-300
- Low VCE(sat) of ≤0.4 V
- Simplifies circuit design by integrating two discrete devices in one package
- Reduces board space and component count
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant
Applications
The SMBT3946DW1T1G is suitable for a variety of general-purpose amplifier applications, including low-power surface mount designs where space is limited. It is particularly useful in automotive and industrial electronics where reliability and compliance with stringent standards are crucial.
Q & A
- What is the SMBT3946DW1T1G device?
The SMBT3946DW1T1G is a complementary general-purpose transistor device that combines one NPN and one PNP transistor in a single SOT-363-6 surface mount package.
- What are the key specifications of the SMBT3946DW1T1G?
Key specifications include a collector-emitter voltage of 40 V / -40 V, collector-base voltage of 60 V / -40 V, and a collector current of 200 mA / -200 mA.
- What are the thermal characteristics of the SMBT3946DW1T1G?
The device has a total package dissipation of 150 mW at 25°C and a thermal resistance of 833 °C/W.
- Is the SMBT3946DW1T1G RoHS compliant?
- What are the typical applications for the SMBT3946DW1T1G?
- What is the current gain (hFE) of the SMBT3946DW1T1G?
The current gain (hFE) is between 100 and 300.
- What is the collector-emitter saturation voltage (VCE(sat)) of the SMBT3946DW1T1G?
The VCE(sat) is ≤0.4 V.
- Is the SMBT3946DW1T1G AEC-Q101 qualified?
- What is the junction and storage temperature range for the SMBT3946DW1T1G?
- How does the SMBT3946DW1T1G simplify circuit design?
