MBT3946DW1T1G
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onsemi MBT3946DW1T1G

Manufacturer No:
MBT3946DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRAN NPN/PNP 40V 0.2A SC88/SC70
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBT3946DW1T1G is a complementary general-purpose transistor array produced by onsemi. It is designed as a spin-off of the popular SOT-23/SOT-323 three-leaded devices and is housed in the SOT-363-6 surface mount package. This device combines two discrete transistors in one package, making it ideal for low-power surface mount applications where board space is limited. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Characteristic Symbol Min Max Unit
Collector-Emitter Voltage V(BR)CEO 40 -40 Vdc
Collector-Base Breakdown Voltage V(BR)CBO 60 -40 Vdc
Emitter-Base Breakdown Voltage V(BR)EBO 6.0 -5.0 Vdc
Base Cutoff Current Ib - - nA
Current Gain (hFE) hFE 100 300 -
Saturation Voltage (VCE(sat)) VCE(sat) - 0.4 V
Output Admittance hoe 1.0 3.0 μmhos
Noise Figure NF - 5.0 dB

Key Features

  • Current gain (hFE) of 100-300
  • Low VCE(sat) of ≤0.4 V
  • Simplifies circuit design by integrating two discrete devices in one package
  • Reduces board space and component count
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant

Applications

The MBT3946DW1T1G is suitable for a variety of general-purpose amplifier applications, particularly in low-power surface mount designs. It is ideal for use in automotive systems due to its AEC-Q101 qualification and PPAP capability. Other applications include consumer electronics, industrial control systems, and any scenario where compact, reliable transistor arrays are required.

Q & A

  1. What is the package type of the MBT3946DW1T1G?

    The MBT3946DW1T1G is housed in the SOT-363-6 surface mount package.

  2. What are the key electrical characteristics of the MBT3946DW1T1G?

    Key characteristics include a collector-emitter voltage of up to 40 V, collector-base breakdown voltage of up to 60 V, and a current gain (hFE) of 100-300.

  3. Is the MBT3946DW1T1G suitable for automotive applications?
  4. What are the environmental compliance features of the MBT3946DW1T1G?

    The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  5. How does the MBT3946DW1T1G simplify circuit design?

    It integrates two discrete transistors in one package, reducing board space and component count.

  6. What is the typical noise figure of the MBT3946DW1T1G?

    The noise figure is typically up to 5.0 dB.

  7. What is the output admittance of the MBT3946DW1T1G?

    The output admittance is between 1.0 and 3.0 μmhos.

  8. Is the MBT3946DW1T1G available in tape and reel packaging?
  9. What are the typical switching characteristics of the MBT3946DW1T1G?

    The device has specified delay, rise, storage, and fall times, which can be found in the detailed datasheet.

  10. How does the MBT3946DW1T1G reduce component count?

    By integrating two discrete transistors into a single package, it reduces the overall component count in a circuit.

Product Attributes

Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):200mA
Voltage - Collector Emitter Breakdown (Max):40V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:150mW
Frequency - Transition:300MHz, 250MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Same Series
SMBT3946DW1T1G
SMBT3946DW1T1G
TRAN NPN/PNP 40V 0.2A SC88/SC70
MBT3946DW1T1G
MBT3946DW1T1G
TRAN NPN/PNP 40V 0.2A SC88/SC70
MBT3946DW1T1
MBT3946DW1T1
TRANS DUAL GP 200MA 40V SOT363

Similar Products

Part Number MBT3946DW1T1G MBT3946DW1T2G MBT3906DW1T1G MBT3946DW1T1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type NPN, PNP NPN, PNP 2 PNP (Dual) -
Current - Collector (Ic) (Max) 200mA 200mA 200mA -
Voltage - Collector Emitter Breakdown (Max) 40V 40V 40V -
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA 400mV @ 5mA, 50mA -
Current - Collector Cutoff (Max) - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V -
Power - Max 150mW 150mW 150mW -
Frequency - Transition 300MHz, 250MHz 300MHz, 250MHz 250MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount -
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 -
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 -

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