Overview
The MBT3906DW1T1G is a Dual PNP Bipolar Transistor produced by onsemi. It is designed as a spin-off of the popular SOT-23/SOT-323 three-leaded device, housed in the SOT-363 six-leaded surface mount package. This device is ideal for general purpose amplifier applications, particularly in low-power surface mount scenarios where board space is limited. By integrating two discrete transistors into one package, it simplifies circuit design, reduces board space, and minimizes component count.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | -40 | Vdc |
| Collector-Base Voltage | VCBO | - | -40 | Vdc |
| Emitter-Base Voltage | VEBO | - | -5.0 | Vdc |
| Collector Current - Continuous | IC | - | 200 | mAdc |
| DC Current Gain (hFE) | hFE | 100 | 300 | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | - | ≤ 0.4 | V |
| Base Cutoff Current | IBL | - | -50 | nAdc |
| Collector Cutoff Current | ICEX | - | -50 | nAdc |
Key Features
- hFE range of 100-300
- Low VCE(sat) of ≤ 0.4 V
- Simplifies circuit design by integrating two discrete devices in one package
- Reduces board space and component count
- Available in 8 mm, 7-inch/3,000 Unit Tape and Reel
- S Prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
Applications
The MBT3906DW1T1G is suitable for a variety of general purpose amplifier applications, particularly in low-power surface mount designs. It is ideal for use in automotive and other industries where space is limited and reliability is crucial. The device is also applicable in consumer electronics, industrial control systems, and any scenario requiring compact, reliable bipolar transistor solutions.
Q & A
- What is the package type of the MBT3906DW1T1G?
The MBT3906DW1T1G is housed in the SOT-363 six-leaded surface mount package.
- What are the key benefits of using the MBT3906DW1T1G?
The key benefits include simplified circuit design, reduced board space, and minimized component count.
- What is the DC current gain (hFE) range of the MBT3906DW1T1G?
The hFE range is 100-300.
- What is the maximum collector-emitter saturation voltage (VCE(sat)) of the MBT3906DW1T1G?
The maximum VCE(sat) is ≤ 0.4 V.
- Is the MBT3906DW1T1G suitable for automotive applications?
- Is the MBT3906DW1T1G RoHS compliant?
- What is the collector-emitter voltage (VCEO) rating of the MBT3906DW1T1G?
The VCEO rating is -40 Vdc.
- What is the emitter-base voltage (VEBO) rating of the MBT3906DW1T1G?
The VEBO rating is -5.0 Vdc.
- What is the continuous collector current (IC) rating of the MBT3906DW1T1G?
The continuous IC rating is 200 mAdc.
- How is the MBT3906DW1T1G packaged for shipping?
