SMBT3906DW1T1G
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onsemi SMBT3906DW1T1G

Manufacturer No:
SMBT3906DW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP 40V 0.2A SC88
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMBT3906DW1T1G is a dual general-purpose transistor produced by onsemi. This device is designed for low-power surface mount applications where board space is limited. It is a spin-off of the popular SOT-23/SOT-323 three-leaded devices, housed in the SOT-363 six-leaded surface mount package. By integrating two discrete transistors into one package, it simplifies circuit design, reduces board space, and minimizes component count.

Key Specifications

Characteristic Symbol Min Max Unit
Collector-Emitter Voltage VCEO - -40 Vdc
Collector-Base Voltage VCBO - -40 Vdc
Emitter-Base Voltage VEBO - -5.0 Vdc
Collector Current - Continuous IC - -200 mAdc
Electrostatic Discharge ESD - HBM Class 2, MM Class B -
Total Package Dissipation (TA = 25°C) PD - 150 mW
Thermal Resistance, Junction-to-Ambient RJA - 833 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 +150 °C
DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) hFE 60 300 -
Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) VCE(sat) - -0.4 Vdc
Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) VBE(sat) -0.65 -0.95 Vdc

Key Features

  • DC current gain (hFE) of 100-300
  • Low collector-emitter saturation voltage (VCE(sat)) of ≤ 0.4 V
  • Simplifies circuit design by integrating two discrete transistors in one package
  • Reduces board space and component count
  • Available in 8 mm, 7-inch/3,000 unit tape and reel
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications
  • Pb-free, halogen-free/BFR-free, and RoHS compliant

Applications

The SMBT3906DW1T1G is suitable for a variety of general-purpose amplifier applications, particularly in scenarios where space is limited. It is ideal for use in low-power surface mount designs, such as in automotive electronics, consumer electronics, and industrial control systems.

Q & A

  1. What is the SMBT3906DW1T1G transistor used for?

    The SMBT3906DW1T1G is used for general-purpose amplifier applications in low-power surface mount designs.

  2. What package type does the SMBT3906DW1T1G come in?

    The SMBT3906DW1T1G is housed in the SOT-363 six-leaded surface mount package.

  3. What are the key benefits of using the SMBT3906DW1T1G?

    It simplifies circuit design, reduces board space, and minimizes component count by integrating two discrete transistors into one package.

  4. What is the DC current gain range of the SMBT3906DW1T1G?

    The DC current gain (hFE) ranges from 100 to 300.

  5. What is the maximum collector-emitter voltage for the SMBT3906DW1T1G?

    The maximum collector-emitter voltage (VCEO) is -40 Vdc.

  6. Is the SMBT3906DW1T1G RoHS compliant?
  7. What are the thermal characteristics of the SMBT3906DW1T1G?

    The total package dissipation at TA = 25°C is 150 mW, and the thermal resistance (RJA) is 833 °C/W.

  8. What is the junction and storage temperature range for the SMBT3906DW1T1G?

    The junction and storage temperature range is -55°C to +150°C.

  9. Is the SMBT3906DW1T1G suitable for automotive applications?
  10. How is the SMBT3906DW1T1G shipped?

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):200mA
Voltage - Collector Emitter Breakdown (Max):40V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:150mW
Frequency - Transition:250MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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In Stock

$0.38
1,930

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Same Series
MBT3906DW1T1G
MBT3906DW1T1G
TRANS 2PNP 40V 0.2A SC88/SC70-6
MBT3906DW1T1
MBT3906DW1T1
TRANS 2PNP 40V 0.2A SOT363
MBT3906DW1T2G
MBT3906DW1T2G
TRANS 2PNP 40V 0.2A SC88

Similar Products

Part Number SMBT3906DW1T1G SMBT3946DW1T1G SMBT3904DW1T1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type 2 PNP (Dual) NPN, PNP 2 NPN (Dual)
Current - Collector (Ic) (Max) 200mA 200mA 200mA
Voltage - Collector Emitter Breakdown (Max) 40V 40V 40V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA, 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 150mW 150mW 150mW
Frequency - Transition 250MHz 300MHz, 250MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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