Overview
The SMBT3906DW1T1G is a dual general-purpose transistor produced by onsemi. This device is designed for low-power surface mount applications where board space is limited. It is a spin-off of the popular SOT-23/SOT-323 three-leaded devices, housed in the SOT-363 six-leaded surface mount package. By integrating two discrete transistors into one package, it simplifies circuit design, reduces board space, and minimizes component count.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | -40 | Vdc |
| Collector-Base Voltage | VCBO | - | -40 | Vdc |
| Emitter-Base Voltage | VEBO | - | -5.0 | Vdc |
| Collector Current - Continuous | IC | - | -200 | mAdc |
| Electrostatic Discharge | ESD | - | HBM Class 2, MM Class B | - |
| Total Package Dissipation (TA = 25°C) | PD | - | 150 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | - | 833 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | +150 | °C |
| DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) | hFE | 60 | 300 | - |
| Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) | VCE(sat) | - | -0.4 | Vdc |
| Base-Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) | VBE(sat) | -0.65 | -0.95 | Vdc |
Key Features
- DC current gain (hFE) of 100-300
- Low collector-emitter saturation voltage (VCE(sat)) of ≤ 0.4 V
- Simplifies circuit design by integrating two discrete transistors in one package
- Reduces board space and component count
- Available in 8 mm, 7-inch/3,000 unit tape and reel
- AEC-Q101 qualified and PPAP capable for automotive and other critical applications
- Pb-free, halogen-free/BFR-free, and RoHS compliant
Applications
The SMBT3906DW1T1G is suitable for a variety of general-purpose amplifier applications, particularly in scenarios where space is limited. It is ideal for use in low-power surface mount designs, such as in automotive electronics, consumer electronics, and industrial control systems.
Q & A
- What is the SMBT3906DW1T1G transistor used for?
The SMBT3906DW1T1G is used for general-purpose amplifier applications in low-power surface mount designs.
- What package type does the SMBT3906DW1T1G come in?
The SMBT3906DW1T1G is housed in the SOT-363 six-leaded surface mount package.
- What are the key benefits of using the SMBT3906DW1T1G?
It simplifies circuit design, reduces board space, and minimizes component count by integrating two discrete transistors into one package.
- What is the DC current gain range of the SMBT3906DW1T1G?
The DC current gain (hFE) ranges from 100 to 300.
- What is the maximum collector-emitter voltage for the SMBT3906DW1T1G?
The maximum collector-emitter voltage (VCEO) is -40 Vdc.
- Is the SMBT3906DW1T1G RoHS compliant?
- What are the thermal characteristics of the SMBT3906DW1T1G?
The total package dissipation at TA = 25°C is 150 mW, and the thermal resistance (RJA) is 833 °C/W.
- What is the junction and storage temperature range for the SMBT3906DW1T1G?
The junction and storage temperature range is -55°C to +150°C.
- Is the SMBT3906DW1T1G suitable for automotive applications?
- How is the SMBT3906DW1T1G shipped?
