Overview
The BC807DS,115 is a PNP/PNP general-purpose double transistor produced by Nexperia USA Inc. This component is housed in an SOT457 (SC-74) plastic package, making it suitable for a variety of electronic applications. The BC807DS is designed for general-purpose switching and amplification, offering the advantage of reducing component count and pick-and-place costs. It is also AEC-Q101 qualified, ensuring its reliability in automotive and other demanding environments.
Key Specifications
| Parameter | Value |
|---|---|
| Type | PNP/PNP double transistor |
| Package | SOT457 (SC-74) |
| Maximum Collector-Emitter Voltage (VCEO) | -45 V |
| Maximum Collector Current (IC) | -500 mA |
| DC Current Gain (hFE) Range | 160 - 400 |
| Power Dissipation (PD) | 370 mW |
| Transition Frequency (fT) | 80 MHz |
| Maximum Junction Temperature (TJ) | 150°C |
| AEC-Q101 Qualified | Yes |
Key Features
- General-purpose switching and amplification: Suitable for a wide range of electronic circuits.
- Reduced component count and pick-and-place costs: The double transistor configuration in a single package simplifies design and reduces manufacturing costs.
- AEC-Q101 qualified: Ensures reliability and performance in automotive and other demanding applications.
- Compact SOT457 (SC-74) package: Ideal for space-constrained designs.
- High DC current gain: hFE range of 160 to 400, ensuring reliable amplification.
Applications
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
- Industrial control systems: Reliable performance in industrial environments.
- Consumer electronics: Used in various consumer electronic devices requiring general-purpose switching and amplification.
- Power and computing applications: Suitable for power amplification and computing systems where reliability and efficiency are crucial.
Q & A
- What is the package type of the BC807DS,115 transistor?
The BC807DS,115 is housed in an SOT457 (SC-74) plastic package.
- What is the maximum collector-emitter voltage (VCEO) of the BC807DS,115?
The maximum collector-emitter voltage (VCEO) is -45 V.
- What is the maximum collector current (IC) of the BC807DS,115?
The maximum collector current (IC) is -500 mA.
- Is the BC807DS,115 AEC-Q101 qualified?
Yes, the BC807DS,115 is AEC-Q101 qualified.
- What is the transition frequency (fT) of the BC807DS,115?
The transition frequency (fT) is 80 MHz.
- What are the primary applications of the BC807DS,115 transistor?
The primary applications include automotive systems, industrial control systems, consumer electronics, and power and computing applications.
- What is the power dissipation (PD) of the BC807DS,115?
The power dissipation (PD) is 370 mW.
- What is the DC current gain (hFE) range of the BC807DS,115?
The DC current gain (hFE) range is 160 to 400.
- What is the maximum junction temperature (TJ) of the BC807DS,115?
The maximum junction temperature (TJ) is 150°C.
- How does the BC807DS,115 reduce manufacturing costs?
The BC807DS,115 reduces component count and pick-and-place costs by integrating two transistors in a single package.
