Overview
The MBT3904DW1T1G is a dual general-purpose transistor device manufactured by onsemi. It is designed for low-power surface mount applications where board space is a premium. This device is housed in the SOT-363 six-leaded surface mount package, combining two discrete transistors in one package to simplify circuit design and reduce component count.
This transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | 40 | Vdc |
| Collector-Base Voltage | VCBO | - | 60 | Vdc |
| Emitter-Base Voltage | VEBO | - | 6.0 | Vdc |
| Collector Current - Continuous | IC | - | 200 | mAdc |
| Electrostatic Discharge | ESD | - | HBM Class 2, MM Class B | - |
| Total Package Dissipation (TA = 25°C) | PD | - | 150 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | - | 833 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | +150 | °C |
| DC Current Gain (hFE) at IC = 100 mAdc, VCE = 1.0 Vdc | hFE | 100 | 300 | - |
| Collector-Emitter Saturation Voltage at IC = 10 mAdc, IB = 1.0 mAdc | VCE(sat) | - | 0.3 | Vdc |
| Base-Emitter Saturation Voltage at IC = 10 mAdc, IB = 1.0 mAdc | VBE(sat) | 0.65 | 0.95 | Vdc |
Key Features
- High DC current gain (hFE) of 100-300
- Low VCE(sat) of ≤ 0.4 V
- Simplifies circuit design by combining two discrete devices in one package
- Reduces board space and component count
- Available in 8 mm, 7-inch/3,000 unit tape and reel packaging
- AEC-Q101 qualified and PPAP capable for automotive and other critical applications
- Pb-free, halogen-free, and RoHS compliant
Applications
The MBT3904DW1T1G is suitable for a variety of general-purpose amplifier applications, particularly in low-power surface mount designs. It is ideal for use in:
- Automotive electronics
- Consumer electronics
- Industrial control systems
- Audio and video equipment
- Other applications where space is limited and reliability is crucial
Q & A
- What is the package type of the MBT3904DW1T1G?
The MBT3904DW1T1G is housed in the SOT-363 six-leaded surface mount package.
- What is the maximum collector-emitter voltage (VCEO) for this transistor?
The maximum collector-emitter voltage (VCEO) is 40 Vdc.
- What is the DC current gain (hFE) range for this device?
The DC current gain (hFE) ranges from 100 to 300.
- What is the typical collector-emitter saturation voltage (VCE(sat))?
The typical collector-emitter saturation voltage (VCE(sat)) is ≤ 0.3 V.
- Is the MBT3904DW1T1G RoHS compliant?
Yes, the MBT3904DW1T1G is Pb-free, halogen-free, and RoHS compliant.
- What are the thermal characteristics of this device?
The total package dissipation (PD) at TA = 25°C is 150 mW, and the thermal resistance, junction-to-ambient (RJA), is 833 °C/W.
- What is the junction and storage temperature range for this transistor?
The junction and storage temperature range is -55°C to +150°C.
- Is the MBT3904DW1T1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
- What are the key benefits of using the MBT3904DW1T1G in circuit designs?
The key benefits include simplifying circuit design, reducing board space, and reducing component count.
- What is the typical base-emitter saturation voltage (VBE(sat)) for this device?
The typical base-emitter saturation voltage (VBE(sat)) ranges from 0.65 V to 0.95 V.
