Overview
The NST847BPDP6T5G is a dual complementary general-purpose transistor produced by onsemi. This device is a variant of the popular SOT-23/SOT-323/SOT-563 three-leaded transistors, housed in the SOT-963 six-leaded surface mount package. It is designed for general-purpose amplifier applications and is ideal for low-power surface mount designs where board space is limited. The device combines two discrete transistors (one NPN and one PNP) in a single package, simplifying circuit design and reducing component count and board space.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 45 | Vdc |
| Collector-Base Voltage | VCBO | 50 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 100 | mAdc |
| DC Current Gain (hFE) | hFE | 200-450 | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | ≤ 0.3 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | VBE(sat) | ≤ 0.7 | V |
| Junction and Storage Temperature Range | TJ, Tstg | −55 to +150 | °C |
Key Features
- Low VCE(sat): Collector-emitter saturation voltage is ≤ 0.3 V, ensuring low power consumption.
- High DC Current Gain (hFE): Ranges from 200 to 450, providing reliable amplification.
- Simplified Circuit Design: Combines two discrete transistors in one package, reducing the complexity of circuit design.
- Reduced Board Space and Component Count: Ideal for applications where space is limited.
- Pb-Free Device: Compliant with lead-free requirements, making it environmentally friendly.
Applications
The NST847BPDP6T5G is suitable for various general-purpose amplifier applications, including:
- Low-power surface mount designs
- Audio amplifiers
- Switching circuits
- Automotive electronics
- Consumer electronics
Q & A
- What is the package type of the NST847BPDP6T5G transistor?
The NST847BPDP6T5G is housed in the SOT-963 six-leaded surface mount package.
- What are the typical applications of the NST847BPDP6T5G transistor?
It is used in general-purpose amplifier applications, including low-power surface mount designs, audio amplifiers, switching circuits, automotive electronics, and consumer electronics.
- What is the collector-emitter voltage rating of the NST847BPDP6T5G transistor?
The collector-emitter voltage (VCEO) is rated at 45 Vdc.
- What is the DC current gain (hFE) range of the NST847BPDP6T5G transistor?
The DC current gain (hFE) ranges from 200 to 450.
- Is the NST847BPDP6T5G transistor lead-free?
- What is the junction and storage temperature range of the NST847BPDP6T5G transistor?
The junction and storage temperature range is −55 to +150 °C.
- How does the NST847BPDP6T5G simplify circuit design?
By combining two discrete transistors in one package, it reduces the complexity of circuit design and the number of components needed.
- What are the benefits of the low VCE(sat) in the NST847BPDP6T5G transistor?
The low VCE(sat) of ≤ 0.3 V ensures low power consumption and efficient operation.
- Can the NST847BPDP6T5G be used in high-temperature environments?
- How does the NST847BPDP6T5G reduce board space?
By integrating two transistors into a single package, it reduces the overall component count and the space required on the PCB.
