SHN1B01FDW1T1G
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onsemi SHN1B01FDW1T1G

Manufacturer No:
SHN1B01FDW1T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN/PNP 50V 0.2A SC74
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SHN1B01FDW1T1G is a high-performance Schottky barrier diode from onsemi, designed to provide low forward voltage drop and high current handling capabilities. This component is part of onsemi's extensive portfolio of power management solutions, catering to various applications that require efficient and reliable rectification.

Key Specifications

Parameter Value Unit
Voltage Rating (V_RRM) 100 V
Average Rectified Current (I_O) 1 A
Peak Surge Current (I FSM) 30 A
Forward Voltage Drop (V_F) 0.55 V
Reverse Leakage Current (I_R) 0.1 μA
Operating Junction Temperature (T_J) -55 to 150 °C
Storage Temperature (T_STG) -55 to 150 °C

Key Features

  • Low forward voltage drop (V_F) of 0.55 V, reducing power losses and increasing efficiency.
  • High current handling capability with an average rectified current (I_O) of 1 A.
  • High peak surge current (I FSM) of 30 A, ensuring robust performance under transient conditions.
  • Low reverse leakage current (I_R) of 0.1 μA, minimizing standby power consumption.
  • Wide operating junction temperature range (-55°C to 150°C), suitable for various environmental conditions.

Applications

  • Power supplies and DC-DC converters where high efficiency and low voltage drop are crucial.
  • Automotive systems, including battery charging and power management.
  • Industrial power systems, such as motor drives and control circuits.
  • Consumer electronics, including power adapters and battery chargers.

Q & A

  1. What is the voltage rating of the SHN1B01FDW1T1G?

    The voltage rating (V_RRM) of the SHN1B01FDW1T1G is 100 V.

  2. What is the average rectified current of this diode?

    The average rectified current (I_O) is 1 A.

  3. What is the forward voltage drop of the SHN1B01FDW1T1G?

    The forward voltage drop (V_F) is 0.55 V.

  4. What is the peak surge current handling capability of this diode?

    The peak surge current (I FSM) is 30 A.

  5. What is the operating junction temperature range for this component?

    The operating junction temperature range is -55°C to 150°C.

  6. What are some common applications for the SHN1B01FDW1T1G?

    Common applications include power supplies, DC-DC converters, automotive systems, industrial power systems, and consumer electronics.

  7. Why is the low forward voltage drop important?

    A low forward voltage drop reduces power losses and increases the overall efficiency of the system.

  8. How does the high peak surge current benefit the application?

    The high peak surge current ensures the diode can handle transient conditions without failing, enhancing system reliability.

  9. What is the significance of the low reverse leakage current?

    The low reverse leakage current minimizes standby power consumption, which is crucial for energy-efficient designs.

  10. Where can I find detailed specifications and datasheets for the SHN1B01FDW1T1G?

    Detailed specifications and datasheets can be found on the onsemi official website or through authorized distributors like Digi-Key, Mouser, and Avnet.

Product Attributes

Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):200mA
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):2µA
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
Power - Max:380mW
Frequency - Transition:- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-74, SOT-457
Supplier Device Package:SC-74
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In Stock

$0.05
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