Overview
The BC80740 is a PNP general-purpose transistor manufactured by Fairchild Semiconductor, now part of Nexperia. This transistor is designed for a wide range of applications, including switching and amplification. It is packaged in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, making it suitable for compact and efficient electronic designs.
Key Specifications
| Parameter | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (BVCEO) | - | - | -45 | V |
| Collector-Emitter Breakdown Voltage (BVCES) | - | - | -50 | V |
| Emitter-Base Breakdown Voltage (BVEBO) | - | - | -5 | V |
| Collector Cut-Off Current (ICES) | - | - | 100 nA | |
| Emitter Cut-Off Current (IEBO) | - | - | 100 nA | |
| DC Current Gain (hFE1) | 250 | - | 630 | |
| DC Current Gain (hFE2) | 60 | - | 170 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | - | - | -0.7 | V |
| Base-Emitter On Voltage (VBE(on)) | - | - | -1.2 | V |
| Current Gain Bandwidth Product (fT) | 100 | - | - | MHz |
| Output Capacitance (Cob) | - | - | 12 pF | |
| Maximum Collector Current (IC) | - | - | 500 mA | |
| Maximum Power Dissipation (Ptot) | - | - | 310 mW | |
| Junction Temperature (TJ) | - | - | 150 °C |
Key Features
- PNP general-purpose transistor in SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.
- Suitable for switching and amplification applications.
- High current capability with a maximum collector current of 500 mA.
- Three current gain selections available.
- Collector-Emitter Breakdown Voltage of up to -45 V.
- Current Gain Bandwidth Product of 100 MHz.
- Low collector-emitter saturation voltage of -0.7 V.
- Compact and efficient design suitable for various electronic applications.
Applications
The BC80740 transistor is versatile and can be used in a variety of applications, including:
- Switching circuits: Due to its high current gain and low saturation voltage, it is ideal for switching applications.
- Amplifier stages: Suitable for AF-driver stages and low power output stages.
- Automotive and industrial electronics: Can be used in various automotive and industrial applications due to its robust specifications.
- Consumer electronics: Finds use in mobile, computing, and consumer devices where compact and efficient transistor performance is required.
- Power and computing applications: Used in power management and computing systems where reliability and efficiency are crucial.
Q & A
- What is the maximum collector current of the BC80740 transistor?
The maximum collector current of the BC80740 transistor is 500 mA. - What is the collector-emitter breakdown voltage of the BC80740?
The collector-emitter breakdown voltage (BVCEO) of the BC80740 is up to -45 V. - What is the current gain bandwidth product (fT) of the BC80740?
The current gain bandwidth product (fT) of the BC80740 is 100 MHz. - What package type does the BC80740 come in?
The BC80740 comes in a SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. - What are the typical applications of the BC80740 transistor?
The BC80740 is typically used in switching circuits, amplifier stages, automotive and industrial electronics, consumer electronics, and power and computing applications. - What is the maximum junction temperature for the BC80740?
The maximum junction temperature for the BC80740 is 150 °C. - Is the BC80740 RoHS compliant?
Yes, the BC80740 is RoHS compliant. - What is the base-emitter on voltage of the BC80740?
The base-emitter on voltage (VBE(on)) of the BC80740 is -1.2 V. - What is the output capacitance of the BC80740?
The output capacitance (Cob) of the BC80740 is 12 pF. - Is the BC80740 suitable for high-frequency applications?
Yes, with a current gain bandwidth product of 100 MHz, the BC80740 is suitable for high-frequency applications.
