Overview
The BD677AS is a Medium Power NPN Darlington Bipolar Power Transistor, originally produced by Fairchild Semiconductor and now part of ON Semiconductor. This transistor is designed for use as output devices in complementary general-purpose amplifier applications. It is part of a series that includes the BD675A, BD677A, BD679A, and BD681, which are known for their high DC current gain and monolithic construction.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Collector-Base Voltage (VCBO) | 60 | V |
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (DC) (IC) | 4 | A |
| Collector Current (Pulse) (ICP) | 6 | A |
| Base Current (IB) | 100 | mA |
| Collector Dissipation (PC) | 40 | W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -65 to 150 | °C |
| DC Current Gain (hFE) | 750 (Min) @ IC = 1.5 and 2.0 A | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.8 V @ IC = 2A, IB = 40mA | |
| Base-Emitter ON Voltage (VBE(on)) | 2.5 V @ IC = 2A |
Key Features
- High DC Current Gain: hFE = 750 (Min) @ IC = 1.5 and 2.0 A
- Monolithic Construction
- Pb-Free Packages Available
- Complementary to BD676A, BD678A, BD680A, and BD682
- Equivalent to MJE 800, 801, 802, 803
Applications
The BD677AS is suitable for medium power linear and switching applications, particularly as output devices in general-purpose amplifier circuits. It is commonly used in automotive, industrial, and consumer electronics where high current gain and reliability are required.
Q & A
- What is the maximum collector-emitter voltage (VCEO) for the BD677AS?
The maximum collector-emitter voltage (VCEO) for the BD677AS is 60V. - What is the DC current gain (hFE) of the BD677AS?
The DC current gain (hFE) of the BD677AS is 750 (Min) at IC = 1.5 and 2.0 A. - What is the maximum collector current (IC) for the BD677AS?
The maximum collector current (IC) for the BD677AS is 4 A (DC) and 6 A (Pulse). - Is the BD677AS Pb-Free?
- What are the complementary transistors to the BD677AS?
The BD677AS is complementary to BD676A, BD678A, BD680A, and BD682.- What are the equivalent transistors to the BD677AS?
The BD677AS is equivalent to MJE 800, 801, 802, 803.- What is the junction temperature range for the BD677AS?
The junction temperature range for the BD677AS is up to 150°C.- What is the storage temperature range for the BD677AS?
The storage temperature range for the BD677AS is -65 to 150°C.- Can the BD677AS be used in life support systems or medical devices?
No, the BD677AS is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices.- What package type is the BD677AS available in?
The BD677AS is available in the TO-126 package. - What are the complementary transistors to the BD677AS?
