Overview
The SS8050BBU is an NPN epitaxial silicon transistor manufactured by Fairchild Semiconductor, now part of onsemi. This transistor is designed for a variety of applications, particularly in output amplifier roles, such as in portable radios using Class B push-pull operation. It is complementary to the SS8550 PNP transistor, making it a versatile component for bipolar transistor pairs in amplifier circuits.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V |
| Collector-Emitter Voltage | VCEO | 25 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Collector Current | IC | 1.5 | A |
| Junction Temperature | TJ | 150 | °C |
| Storage Temperature | TSTG | -65 to 150 | °C |
| Power Dissipation | PD | 1 | W |
| Derate Above 25°C | 8 mW/°C | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 125 | °C/W |
| DC Current Gain (hFE2) at VCE = 1 V, IC = 100 mA | hFE2 | 85 ~ 300 | |
| Collector-Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA | VCE(sat) | 0.5 | V |
| Base-Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA | VBE(sat) | 1.2 | V |
| Current Gain Bandwidth Product at VCE = 10 V, IC = 50 mA | fT | 100 | MHz |
Key Features
- Complementary to SS8550 PNP transistor, making it suitable for bipolar transistor pairs in amplifier circuits.
- Designed for output amplifier applications, particularly in Class B push-pull operation in portable radios.
- High collector current of up to 1.5 A.
- Collector-emitter voltage of up to 25 V.
- Pb-free, halogen-free, and RoHS compliant.
- Available in TO-92-3 package with various shipping options (bulk, ammo, fan-fold).
Applications
- Output amplifiers in portable radios using Class B push-pull operation.
- General-purpose amplifier circuits requiring high current gain and moderate power handling.
- Audio amplifiers and other low-frequency applications.
- Switching circuits where high current and moderate voltage are required.
Q & A
- What is the maximum collector current of the SS8050BBU transistor?
The maximum collector current (IC) of the SS8050BBU transistor is 1.5 A.
- What is the collector-emitter voltage (VCEO) of the SS8050BBU transistor?
The collector-emitter voltage (VCEO) of the SS8050BBU transistor is 25 V.
- Is the SS8050BBU transistor RoHS compliant?
Yes, the SS8050BBU transistor is Pb-free, halogen-free, and RoHS compliant.
- What is the typical DC current gain (hFE) of the SS8050BBU transistor?
The typical DC current gain (hFE2) at VCE = 1 V and IC = 100 mA ranges from 85 to 300.
- What is the thermal resistance, junction-to-ambient (RθJA) of the SS8050BBU transistor?
The thermal resistance, junction-to-ambient (RθJA), is 125 °C/W.
- What are the storage temperature limits for the SS8050BBU transistor?
The storage temperature (TSTG) range is from -65 to 150 °C.
- What is the collector-emitter saturation voltage (VCE(sat)) of the SS8050BBU transistor?
The collector-emitter saturation voltage (VCE(sat)) at IC = 800 mA and IB = 80 mA is 0.5 V.
- What is the base-emitter saturation voltage (VBE(sat)) of the SS8050BBU transistor?
The base-emitter saturation voltage (VBE(sat)) at IC = 800 mA and IB = 80 mA is 1.2 V.
- What is the current gain bandwidth product (fT) of the SS8050BBU transistor?
The current gain bandwidth product (fT) at VCE = 10 V and IC = 50 mA is 100 MHz.
- In what package is the SS8050BBU transistor available?
The SS8050BBU transistor is available in the TO-92-3 package.
- What are some common applications of the SS8050BBU transistor?
Common applications include output amplifiers in portable radios, general-purpose amplifier circuits, audio amplifiers, and switching circuits.
