SS8050DBU
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onsemi SS8050DBU

Manufacturer No:
SS8050DBU
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 25V 1.5A TO92-3
Delivery:
Payment:
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Product Introduction

Overview

The SS8050DBU is an NPN Epitaxial Silicon Transistor manufactured by onsemi. This transistor is designed for general-purpose applications and is particularly suited for use in Class B push-pull operation, such as in 2 W output amplifiers for portable radios. It is complementary to the SS8550 transistor. The SS8050DBU is Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly and compliant with current regulatory standards.

Key Specifications

ParameterSymbolValueUnit
Collector-Base VoltageVCBO40V
Collector-Emitter VoltageVCEO25V
Emitter-Base VoltageVEBO6V
Collector CurrentIC1.5A
Junction TemperatureTJ150°C
Storage TemperatureTSTG-65 to 150°C
Power DissipationPD1W
Thermal Resistance, Junction-to-AmbientRJA125°C/W
Base-Emitter Saturation VoltageVBE(sat)1.2V
DC Current Gain (hFE)hFE160 - 300
Collector-Emitter Saturation VoltageVCE(sat)0.5V

Key Features

  • High collector current of up to 1.5 A.
  • Collector dissipation of 2 W at TC = 25°C.
  • Complementary to SS8550 transistor.
  • Pb-free, halogen-free, and RoHS compliant.
  • Suitable for Class B push-pull operation in output amplifiers.
  • High DC current gain (hFE) ranging from 160 to 300.

Applications

The SS8050DBU transistor is widely used in various applications, including:

  • Output amplifiers in portable radios and other audio equipment.
  • General-purpose switching and amplification circuits.
  • Class B push-pull amplifiers.
  • Other electronic devices requiring high current and low saturation voltage.

Q & A

  1. What is the maximum collector current of the SS8050DBU transistor?
    The maximum collector current is 1.5 A.
  2. What is the collector dissipation of the SS8050DBU at 25°C?
    The collector dissipation is 2 W at 25°C.
  3. Is the SS8050DBU RoHS compliant?
    Yes, the SS8050DBU is Pb-free, halogen-free, and RoHS compliant.
  4. What is the typical DC current gain (hFE) of the SS8050DBU?
    The DC current gain (hFE) ranges from 160 to 300.
  5. What is the maximum junction temperature for the SS8050DBU?
    The maximum junction temperature is 150°C.
  6. What is the storage temperature range for the SS8050DBU?
    The storage temperature range is -65 to 150°C.
  7. What package type is the SS8050DBU available in?
    The SS8050DBU is available in the TO-92-3 package.
  8. What are some common applications of the SS8050DBU transistor?
    Common applications include output amplifiers in portable radios, general-purpose switching and amplification circuits, and Class B push-pull amplifiers.
  9. Is the SS8050DBU complementary to any other transistor?
    Yes, it is complementary to the SS8550 transistor.
  10. What is the thermal resistance, junction-to-ambient (RJA) of the SS8050DBU?
    The thermal resistance, junction-to-ambient (RJA) is 125 °C/W.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):25 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 80mA, 800mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:1 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:TO-92-3
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Similar Products

Part Number SS8050DBU SS8550DBU SS8050BBU SS8050CBU
Manufacturer onsemi onsemi Fairchild Semiconductor onsemi
Product Status Active Active Active Active
Transistor Type NPN PNP NPN NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 25 V 25 V 25 V 25 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA 500mV @ 80mA, 800mA 500mV @ 80mA, 800mA 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V 85 @ 100mA, 1V 120 @ 100mA, 1V
Power - Max 1 W 1 W 1 W 1 W
Frequency - Transition 100MHz 200MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3

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