SS8050DTA
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onsemi SS8050DTA

Manufacturer No:
SS8050DTA
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS NPN 25V 1.5A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SS8050DTA is an NPN Epitaxial Silicon Transistor produced by onsemi. This transistor is designed for high-current applications and is particularly suited for use in output amplifiers, especially in Class B push-pull operations. It is complementary to the SS8550 PNP transistor, making it a versatile component for various electronic circuits.

Key Specifications

Parameter Symbol Value Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 1.5 A
Junction Temperature TJ 150 °C
Storage Temperature TSTG -65 to 150 °C
Power Dissipation PD 1 W
Thermal Resistance, Junction-to-Ambient RθJA 125 °C/W
DC Current Gain (hFE2) at VCE = 1 V, IC = 100 mA hFE2 85 ~ 300
Collector-Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA VCE(sat) 0.5 V
Base-Emitter Saturation Voltage at IC = 800 mA, IB = 80 mA VBE(sat) 1.2 V

Key Features

  • High collector current capability of up to 1.5 A, making it suitable for high-current applications.
  • Complementary to the SS8550 PNP transistor, allowing for balanced push-pull amplifier configurations.
  • Designed for Class B push-pull operation, particularly in output amplifiers of portable radios.
  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
  • Available in TO-92 3-pin package, providing a compact and versatile form factor.

Applications

  • Output amplifiers in portable radios and other audio equipment.
  • Class B push-pull amplifier configurations.
  • High-current switching and amplification circuits.
  • General-purpose NPN transistor applications requiring high current handling.

Q & A

  1. What is the maximum collector current of the SS8050DTA transistor?

    The maximum collector current is 1.5 A.

  2. What is the collector-emitter voltage rating of the SS8050DTA?

    The collector-emitter voltage rating is 25 V.

  3. Is the SS8050DTA RoHS compliant?

    Yes, the SS8050DTA is Pb-free, halogen-free, and RoHS compliant.

  4. What is the typical DC current gain (hFE2) of the SS8050DTA?

    The typical DC current gain (hFE2) ranges from 85 to 300 at VCE = 1 V and IC = 100 mA.

  5. What is the junction temperature rating of the SS8050DTA?

    The junction temperature rating is 150 °C.

  6. What is the storage temperature range for the SS8050DTA?

    The storage temperature range is -65 to 150 °C.

  7. What is the power dissipation rating of the SS8050DTA?

    The power dissipation rating is 1 W, with a derate of 8 mW/°C above 25°C.

  8. What is the thermal resistance, junction-to-ambient, of the SS8050DTA?

    The thermal resistance, junction-to-ambient, is 125 °C/W.

  9. What package type is the SS8050DTA available in?

    The SS8050DTA is available in a TO-92 3-pin package.

  10. What are some common applications of the SS8050DTA transistor?

    Common applications include output amplifiers in portable radios, Class B push-pull amplifier configurations, and high-current switching and amplification circuits.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):25 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 80mA, 800mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:1 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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In Stock

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Similar Products

Part Number SS8050DTA SS8550DTA SS8050CTA
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 25 V 25 V 25 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA 500mV @ 80mA, 800mA 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V 120 @ 100mA, 1V
Power - Max 1 W 1 W 1 W
Frequency - Transition 100MHz 200MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3

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