SS8550DTA
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onsemi SS8550DTA

Manufacturer No:
SS8550DTA
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS PNP 25V 1.5A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SS8550DTA transistor, produced by onsemi, is a PNP epitaxial silicon transistor designed for a variety of low to medium power applications. It is part of the SS8550 series, which is known for its compact size, reliable performance, and cost-effectiveness. This transistor is particularly suited for use in Class B push-pull operations, such as in the output amplifiers of portable radios. It is also complementary to the SS8050 NPN transistor, making it a versatile component for balanced circuit designs.

Key Specifications

Parameter Symbol Value Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -6 V
Collector Current IC -1.5 A A
Junction Temperature TJ 150 °C
Storage Temperature TSTG -65 to 150 °C
Power Dissipation PD 1 W W
Power Dissipation Derate Above 25°C PD 8 mW/°C mW/°C
Thermal Resistance, Junction-to-Ambient RJA 125 °C/W °C/W
DC Current Gain (hFE) hFE 45 to 300 -
Collector-Emitter Saturation Voltage VCE(sat) -0.28 to -0.50 V V
Base-Emitter Saturation Voltage VBE(sat) -0.98 to -1.20 V V
Current Gain Bandwidth Product fT 100 to 200 MHz MHz

Key Features

  • Transistor Type: PNP (Positive-Negative-Positive)
  • Collector Current: Up to 1.5 A
  • Complementary Transistor: Complementary to SS8050 NPN transistor
  • Environmental Compliance: Pb-free, Halogen-free/BFR-free, and RoHS compliant
  • Package Type: TO-92-3 (case 135AR or 135AN)
  • Power Dissipation: Up to 1 W
  • DC Current Gain (hFE): Typically between 45 to 300
  • Transition Frequency (fT): Typically between 100 to 200 MHz

Applications

  • Output Amplifiers in Portable Radios: Ideal for Class B push-pull operations.
  • Audio Amplifiers: Suitable for low to medium power audio amplification.
  • Voltage Regulators: Can be used in voltage regulation circuits.
  • LED Drivers: Applicable for driving LEDs in various electronic circuits.
  • Switching Applications: Used in switching circuits due to its reliable performance.

Q & A

  1. What is the transistor type of the SS8550DTA?

    The SS8550DTA is a PNP (Positive-Negative-Positive) epitaxial silicon transistor.

  2. What is the maximum collector current of the SS8550DTA?

    The maximum collector current is 1.5 A.

  3. Is the SS8550DTA environmentally compliant?

    Yes, it is Pb-free, Halogen-free/BFR-free, and RoHS compliant.

  4. What is the package type of the SS8550DTA?

    The package type is TO-92-3 (case 135AR or 135AN).

  5. What is the power dissipation of the SS8550DTA?

    The power dissipation is up to 1 W.

  6. What is the typical DC current gain (hFE) of the SS8550DTA?

    The typical DC current gain (hFE) is between 45 to 300.

  7. What is the transition frequency (fT) of the SS8550DTA?

    The transition frequency (fT) is typically between 100 to 200 MHz.

  8. What are some common applications of the SS8550DTA?

    Common applications include output amplifiers in portable radios, audio amplifiers, voltage regulators, LED drivers, and switching applications.

  9. Is the SS8550DTA complementary to any other transistor?

    Yes, it is complementary to the SS8050 NPN transistor.

  10. What is the junction temperature range of the SS8550DTA?

    The junction temperature range is up to 150°C.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):25 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 80mA, 800mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:1 W
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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Similar Products

Part Number SS8550DTA SS8050DTA SS8550BTA SS8550CTA
Manufacturer onsemi onsemi Fairchild Semiconductor onsemi
Product Status Active Active Obsolete Active
Transistor Type PNP NPN PNP PNP
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 25 V 25 V 25 V 25 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA 500mV @ 80mA, 800mA 500mV @ 80mA, 800mA 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max) 100nA 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V 85 @ 100mA, 1V 120 @ 100mA, 1V
Power - Max 1 W 1 W 1 W 1 W
Frequency - Transition 200MHz 100MHz 200MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3

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