SS8050CTA
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onsemi SS8050CTA

Manufacturer No:
SS8050CTA
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS NPN 25V 1.5A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SS8050CTA is an NPN Epitaxial Silicon Transistor produced by onsemi. This transistor is designed for general-purpose applications and is particularly suited for use in Class B push-pull amplifiers, such as those found in portable radios. It is complementary to the SS8550 PNP transistor. The SS8050CTA offers a collector current of up to 1.5 A and a collector dissipation of 2 W at 25°C, making it a reliable choice for various electronic circuits.

Key Specifications

ParameterSymbolValueUnit
Collector-Base VoltageVCBO40V
Collector-Emitter VoltageVCEO25V
Emitter-Base VoltageVEBO6V
Collector CurrentIC1.5A
Junction TemperatureTJ150°C
Storage TemperatureTSTG-65 to 150°C
Power DissipationPD1W
Thermal Resistance, Junction-to-AmbientRθJA125°C/W
Collector-Emitter Saturation VoltageVCE(sat)0.5V
Base-Emitter Saturation VoltageVBE(sat)1.2V
DC Current Gain (hFE)hFE120 - 200

Key Features

  • General-purpose NPN Epitaxial Silicon Transistor
  • Complementary to SS8550 PNP transistor
  • Collector current up to 1.5 A
  • Collector dissipation of 2 W at 25°C
  • Suitable for Class B push-pull amplifiers in portable radios
  • Pb-free, halogen-free, and RoHS compliant
  • Available in TO-92-3 package

Applications

  • Class B push-pull amplifiers in portable radios
  • General-purpose amplification and switching circuits
  • Audio amplifiers
  • Power amplifiers
  • Other electronic circuits requiring a reliable NPN transistor

Q & A

  1. What is the maximum collector current of the SS8050CTA?
    The maximum collector current of the SS8050CTA is 1.5 A.
  2. What is the collector dissipation of the SS8050CTA at 25°C?
    The collector dissipation of the SS8050CTA at 25°C is 2 W.
  3. Is the SS8050CTA RoHS compliant?
    Yes, the SS8050CTA is Pb-free, halogen-free, and RoHS compliant.
  4. What is the typical DC current gain (hFE) of the SS8050CTA?
    The typical DC current gain (hFE) of the SS8050CTA is between 120 and 200.
  5. What package type is the SS8050CTA available in?
    The SS8050CTA is available in the TO-92-3 package.
  6. What is the maximum junction temperature for the SS8050CTA?
    The maximum junction temperature for the SS8050CTA is 150°C.
  7. What are some common applications of the SS8050CTA?
    The SS8050CTA is commonly used in Class B push-pull amplifiers in portable radios, general-purpose amplification and switching circuits, audio amplifiers, and power amplifiers.
  8. Is the SS8050CTA complementary to any other transistor?
    Yes, the SS8050CTA is complementary to the SS8550 PNP transistor.
  9. What is the thermal resistance, junction-to-ambient (RθJA) of the SS8050CTA?
    The thermal resistance, junction-to-ambient (RθJA) of the SS8050CTA is 125°C/W.
  10. What is the storage temperature range for the SS8050CTA?
    The storage temperature range for the SS8050CTA is -65°C to 150°C.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):25 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 80mA, 800mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 100mA, 1V
Power - Max:1 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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Same Series
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Similar Products

Part Number SS8050CTA SS8050DTA SS8550CTA
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type NPN NPN PNP
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 25 V 25 V 25 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA 500mV @ 80mA, 800mA 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 1V 160 @ 100mA, 1V 120 @ 100mA, 1V
Power - Max 1 W 1 W 1 W
Frequency - Transition 100MHz 100MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3

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