SS8050CBU
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onsemi SS8050CBU

Manufacturer No:
SS8050CBU
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 25V 1.5A TO92-3
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The SS8050CBU is an NPN Epitaxial Silicon Transistor produced by onsemi. This transistor is designed for general-purpose applications and is particularly suited for use in Class B push-pull amplifiers, such as those found in portable radios. It is complementary to the SS8550 PNP transistor. The SS8050CBU is known for its high collector current and low collector-emitter saturation voltage, making it a versatile component for various electronic circuits.

Key Specifications

Parameter Symbol Value Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 1.5 A
Junction Temperature TJ 150 °C
Storage Temperature TSTG -65 to 150 °C
Power Dissipation PD 1 W
Thermal Resistance, Junction-to-Ambient RθJA 125 °C/W
DC Current Gain (hFE2) hFE2 120 ~ 200
Collector-Emitter Saturation Voltage VCE(sat) 0.5 V
Base-Emitter Saturation Voltage VBE(sat) 1.2 V
Current Gain Bandwidth Product fT 100 MHz

Key Features

  • High Collector Current: Up to 1.5 A, making it suitable for high-current applications.
  • Low Collector-Emitter Saturation Voltage: 0.5 V, which reduces power losses in saturation mode.
  • Complementary Transistor: Complementary to the SS8550 PNP transistor, allowing for balanced push-pull amplifier configurations.
  • General Purpose: Versatile for use in a wide range of electronic circuits.
  • Environmental Compliance: Pb-free, Halogen-free/BFR-free, and RoHS compliant.
  • High Current Gain Bandwidth Product: 100 MHz, suitable for high-frequency applications.

Applications

  • Class B Push-Pull Amplifiers: Ideal for use in portable radios and other audio equipment.
  • General Electronic Circuits: Suitable for a variety of applications requiring high collector current and low saturation voltage.
  • Power Amplifiers: Can be used in power amplifier stages due to its high current handling capability.
  • Switching Circuits: Applicable in switching circuits where high current and low saturation voltage are required.

Q & A

  1. What is the maximum collector current of the SS8050CBU transistor?

    The maximum collector current is 1.5 A.

  2. What is the collector-emitter saturation voltage of the SS8050CBU?

    The collector-emitter saturation voltage is 0.5 V.

  3. Is the SS8050CBU RoHS compliant?

    Yes, the SS8050CBU is Pb-free, Halogen-free/BFR-free, and RoHS compliant.

  4. What is the typical DC current gain (hFE2) of the SS8050CBU?

    The typical DC current gain (hFE2) ranges from 120 to 200.

  5. What is the maximum junction temperature for the SS8050CBU?

    The maximum junction temperature is 150°C.

  6. What is the power dissipation of the SS8050CBU?

    The power dissipation is 1 W.

  7. What is the thermal resistance, junction-to-ambient, of the SS8050CBU?

    The thermal resistance, junction-to-ambient, is 125 °C/W.

  8. What is the current gain bandwidth product of the SS8050CBU?

    The current gain bandwidth product is 100 MHz.

  9. What package types are available for the SS8050CBU?

    The SS8050CBU is available in TO-92-3 packages.

  10. What are some common applications of the SS8050CBU transistor?

    Common applications include Class B push-pull amplifiers, general electronic circuits, power amplifiers, and switching circuits.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1.5 A
Voltage - Collector Emitter Breakdown (Max):25 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 80mA, 800mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 100mA, 1V
Power - Max:1 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:TO-92-3
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SS8050DBU
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SS8050CBU
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Similar Products

Part Number SS8050CBU SS8550CBU SS8050DBU SS8050BBU
Manufacturer onsemi onsemi onsemi Fairchild Semiconductor
Product Status Active Active Active Active
Transistor Type NPN PNP NPN NPN
Current - Collector (Ic) (Max) 1.5 A 1.5 A 1.5 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 25 V 25 V 25 V 25 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA 500mV @ 80mA, 800mA 500mV @ 80mA, 800mA 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 1V 120 @ 100mA, 1V 160 @ 100mA, 1V 85 @ 100mA, 1V
Power - Max 1 W 1 W 1 W 1 W
Frequency - Transition 100MHz 200MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3

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