Overview
The SS8050CBU is an NPN Epitaxial Silicon Transistor produced by onsemi. This transistor is designed for general-purpose applications and is particularly suited for use in Class B push-pull amplifiers, such as those found in portable radios. It is complementary to the SS8550 PNP transistor. The SS8050CBU is known for its high collector current and low collector-emitter saturation voltage, making it a versatile component for various electronic circuits.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Base Voltage | VCBO | 40 | V |
Collector-Emitter Voltage | VCEO | 25 | V |
Emitter-Base Voltage | VEBO | 6 | V |
Collector Current | IC | 1.5 | A |
Junction Temperature | TJ | 150 | °C |
Storage Temperature | TSTG | -65 to 150 | °C |
Power Dissipation | PD | 1 | W |
Thermal Resistance, Junction-to-Ambient | RθJA | 125 | °C/W |
DC Current Gain (hFE2) | hFE2 | 120 ~ 200 | |
Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | V |
Base-Emitter Saturation Voltage | VBE(sat) | 1.2 | V |
Current Gain Bandwidth Product | fT | 100 | MHz |
Key Features
- High Collector Current: Up to 1.5 A, making it suitable for high-current applications.
- Low Collector-Emitter Saturation Voltage: 0.5 V, which reduces power losses in saturation mode.
- Complementary Transistor: Complementary to the SS8550 PNP transistor, allowing for balanced push-pull amplifier configurations.
- General Purpose: Versatile for use in a wide range of electronic circuits.
- Environmental Compliance: Pb-free, Halogen-free/BFR-free, and RoHS compliant.
- High Current Gain Bandwidth Product: 100 MHz, suitable for high-frequency applications.
Applications
- Class B Push-Pull Amplifiers: Ideal for use in portable radios and other audio equipment.
- General Electronic Circuits: Suitable for a variety of applications requiring high collector current and low saturation voltage.
- Power Amplifiers: Can be used in power amplifier stages due to its high current handling capability.
- Switching Circuits: Applicable in switching circuits where high current and low saturation voltage are required.
Q & A
- What is the maximum collector current of the SS8050CBU transistor?
The maximum collector current is 1.5 A.
- What is the collector-emitter saturation voltage of the SS8050CBU?
The collector-emitter saturation voltage is 0.5 V.
- Is the SS8050CBU RoHS compliant?
Yes, the SS8050CBU is Pb-free, Halogen-free/BFR-free, and RoHS compliant.
- What is the typical DC current gain (hFE2) of the SS8050CBU?
The typical DC current gain (hFE2) ranges from 120 to 200.
- What is the maximum junction temperature for the SS8050CBU?
The maximum junction temperature is 150°C.
- What is the power dissipation of the SS8050CBU?
The power dissipation is 1 W.
- What is the thermal resistance, junction-to-ambient, of the SS8050CBU?
The thermal resistance, junction-to-ambient, is 125 °C/W.
- What is the current gain bandwidth product of the SS8050CBU?
The current gain bandwidth product is 100 MHz.
- What package types are available for the SS8050CBU?
The SS8050CBU is available in TO-92-3 packages.
- What are some common applications of the SS8050CBU transistor?
Common applications include Class B push-pull amplifiers, general electronic circuits, power amplifiers, and switching circuits.