Overview
The BD679AS is a Medium Power NPN Darlington Bipolar Power Transistor produced by onsemi. This transistor is designed for use as output devices in complementary general-purpose amplifier applications. It is part of the BD679 series, which includes several variants with different voltage and current ratings.
Although the specific model BD679AS is noted as part of the legacy or discontinued line in some sources, it is important to verify the current lifecycle status with onsemi directly for the most accurate information.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Collector-Base Voltage | VCBO | 80 | Vdc |
| Emitter-Base Voltage | VEBO | 5.0 | Vdc |
| Collector Current | IC | 4.0 | Adc |
| Base Current | IB | 1.0 | Adc |
| Total Device Dissipation | PD | 40 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | –55 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 3.13 | °C/W |
| DC Current Gain (hFE) | hFE | 750 (Min) @ IC = 1.5 and 2.0 Adc | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 2.8 | Vdc |
Key Features
- High DC Current Gain: The BD679AS has a high DC current gain (hFE) of 750 (Min) at IC = 1.5 and 2.0 Adc, making it suitable for high-current applications.
- Monolithic Construction: The transistor is built with monolithic construction, ensuring reliability and stability in operation.
- Complementary Devices: The BD679AS is complementary to other devices in the BD676, 676A, 678, 678A, 680, 680A, and 682 series, allowing for versatile use in various amplifier configurations.
- Pb-Free and RoHS Compliant: The device is lead-free and compliant with RoHS standards, making it environmentally friendly and suitable for modern electronic designs.
- High Voltage and Current Ratings: With a collector-emitter voltage rating of 80 Vdc and a collector current rating of 4.0 Adc, this transistor is capable of handling medium-power applications effectively.
Applications
The BD679AS is designed for use in a variety of applications, including:
- General-Purpose Amplifier Applications: It is particularly suited for use as output devices in complementary general-purpose amplifier circuits.
- Power Amplifiers: Its high current gain and medium power handling capabilities make it suitable for power amplifier applications.
- Motor Control and Power Switching: The transistor can be used in motor control circuits and power switching applications due to its high current and voltage ratings.
- Industrial and Automotive Systems: It can be used in various industrial and automotive systems where high reliability and medium power handling are required.
Q & A
- What is the BD679AS transistor used for?
The BD679AS is used as an output device in complementary general-purpose amplifier applications.
- What is the collector-emitter voltage rating of the BD679AS?
The collector-emitter voltage rating of the BD679AS is 80 Vdc.
- What is the maximum collector current of the BD679AS?
The maximum collector current of the BD679AS is 4.0 Adc.
- Is the BD679AS Pb-Free and RoHS compliant?
Yes, the BD679AS is lead-free and RoHS compliant.
- What is the thermal resistance, junction-to-case of the BD679AS?
The thermal resistance, junction-to-case of the BD679AS is 3.13 °C/W.
- What is the DC current gain (hFE) of the BD679AS?
The DC current gain (hFE) of the BD679AS is 750 (Min) at IC = 1.5 and 2.0 Adc.
- What are the complementary devices to the BD679AS?
The BD679AS is complementary to devices in the BD676, 676A, 678, 678A, 680, 680A, and 682 series.
- What is the operating and storage junction temperature range of the BD679AS?
The operating and storage junction temperature range of the BD679AS is –55 to +150 °C.
- What is the collector-emitter saturation voltage of the BD679AS?
The collector-emitter saturation voltage of the BD679AS is 2.8 Vdc.
- Is the BD679AS suitable for high-power applications?
The BD679AS is suitable for medium-power applications, with a total device dissipation of 40 W.
