Overview
The BD677ASTU is a Medium Power NPN Darlington Bipolar Power Transistor produced by onsemi. This transistor is designed for use as output devices in complementary general-purpose amplifier applications. It is part of the BD6xx series, which includes complementary PNP types. The BD677ASTU is notable for its high DC current gain and monolithic Darlington configuration, making it suitable for various industrial and power management applications.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Base Voltage (IE = 0) | VCBO | 60 | Vdc | |
| Collector-Emitter Breakdown Voltage (IC = 50 mA, IB = 0) | BVCEO | 60 | Vdc | |
| Collector Current | IC | 4.0 | Adc | |
| Base Current | IB | 1.0 | Adc | |
| Total Device Dissipation (TC = 25°C) | PD | 40 | W | |
| Operating and Storage Junction Temperature Range | TJ, Tstg | –55 to +150 | °C | |
| DC Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc) | hFE | 750 | ||
| Collector-Emitter Saturation Voltage (IC = 1.5 Adc, IB = 30 mA) | VCE(sat) | 2.5 | Vdc | |
| Base-Emitter On Voltage (IC = 1.5 Adc, VCE = 3.0 Vdc) | VBE(on) | 2.5 | Vdc |
Key Features
- High DC Current Gain: The BD677ASTU has a high DC current gain (hFE) of 750 at IC = 1.5 Adc and VCE = 3.0 Vdc, making it suitable for high-current applications.
- Monolithic Darlington Configuration: The transistor features a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode, enhancing its performance and reliability.
- Good hFE Linearity: The device exhibits good hFE linearity, which is beneficial for linear and switching applications.
- Pb-Free Packages Available: The BD677ASTU is available in Pb-free packages, aligning with environmental and regulatory requirements.
- Complementary Types: The BD677ASTU has complementary PNP types (e.g., BD678, BD678A), allowing for balanced circuit designs.
Applications
- Linear and Switching Industrial Equipment: The BD677ASTU is used in various industrial applications, including linear and switching equipment, due to its high current handling and good hFE linearity.
- General-Purpose Amplifier Applications: It is suitable for use as output devices in complementary general-purpose amplifier applications.
- Power Management Systems: The transistor can be used in power management systems where high current gain and reliability are crucial.
Q & A
- What is the BD677ASTU transistor used for?
The BD677ASTU is used as an output device in complementary general-purpose amplifier applications and in various industrial and power management systems.
- What is the DC current gain of the BD677ASTU?
The DC current gain (hFE) of the BD677ASTU is 750 at IC = 1.5 Adc and VCE = 3.0 Vdc.
- What is the maximum collector current of the BD677ASTU?
The maximum collector current (IC) of the BD677ASTU is 4.0 Adc.
- What is the collector-emitter saturation voltage of the BD677ASTU?
The collector-emitter saturation voltage (VCE(sat)) of the BD677ASTU is 2.5 Vdc at IC = 1.5 Adc and IB = 30 mA.
- Is the BD677ASTU available in Pb-free packages?
- What are the operating and storage junction temperature ranges for the BD677ASTU?
The operating and storage junction temperature range for the BD677ASTU is –55 to +150°C.
- What is the total device dissipation of the BD677ASTU at TC = 25°C?
The total device dissipation (PD) of the BD677ASTU at TC = 25°C is 40 W.
- Are there complementary PNP types available for the BD677ASTU?
- What is the base-emitter on voltage of the BD677ASTU?
The base-emitter on voltage (VBE(on)) of the BD677ASTU is 2.5 Vdc at IC = 1.5 Adc and VCE = 3.0 Vdc.
- Is the BD677ASTU still in production?
No, the BD677ASTU is obsolete and not recommended for new designs. Please contact onsemi for alternative options.
