Overview
The BD681STU is a medium power NPN epitaxial silicon Darlington transistor manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This transistor is designed for medium power linear and switching applications. It is part of the BD675A/677A/679A/681 series and is known for its high current gain and robust electrical characteristics.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Collector-Base Voltage (VCBO) | 100 | V |
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (DC) (IC) | 4 | A |
| Collector Current (Pulse) (ICP) | 6 | A |
| Base Current (IB) | 100 | mA |
| Collector Dissipation (PC) | 40 | W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -65 to 150 | °C |
| DC Current Gain (hFE) | 750 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.5 | V |
| Base-Emitter ON Voltage (VBE(on)) | 2.5 | V |
Key Features
- Medium power NPN epitaxial silicon Darlington transistor.
- High DC current gain (hFE) of 750.
- Collector-Emitter Saturation Voltage (VCE(sat)) of 2.5V.
- Base-Emitter ON Voltage (VBE(on)) of 2.5V.
- Collector Current (DC) of up to 4A and Collector Current (Pulse) of up to 6A.
- Collector Dissipation of 40W.
- Junction Temperature up to 150°C.
- TO-126 package.
Applications
The BD681STU is suitable for medium power linear and switching applications. It can be used in various circuits requiring high current gain and robust electrical performance, such as:
- Power amplifiers.
- Switching circuits.
- Motor control systems.
- High-current driver circuits.
Q & A
- What is the collector-emitter voltage (VCEO) of the BD681STU?
The collector-emitter voltage (VCEO) of the BD681STU is 100V.
- What is the maximum collector current (IC) for the BD681STU?
The maximum collector current (IC) for the BD681STU is 4A.
- What is the DC current gain (hFE) of the BD681STU?
The DC current gain (hFE) of the BD681STU is 750.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BD681STU?
The collector-emitter saturation voltage (VCE(sat)) of the BD681STU is 2.5V.
- What is the base-emitter ON voltage (VBE(on)) of the BD681STU?
The base-emitter ON voltage (VBE(on)) of the BD681STU is 2.5V.
- What is the junction temperature (TJ) range for the BD681STU?
The junction temperature (TJ) range for the BD681STU is up to 150°C.
- What is the storage temperature (TSTG) range for the BD681STU?
The storage temperature (TSTG) range for the BD681STU is -65 to 150°C.
- What package type is the BD681STU available in?
The BD681STU is available in the TO-126 package.
- Is the BD681STU suitable for life support devices or systems?
No, the BD681STU is not authorized for use as critical components in life support devices or systems without the express written approval of Fairchild Semiconductor International.
- What are some common applications of the BD681STU?
The BD681STU is commonly used in medium power linear and switching applications, such as power amplifiers, switching circuits, motor control systems, and high-current driver circuits.
